Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING DEVICE
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Application No.: US16783496Application Date: 2020-02-06
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Publication No.: US20200176631A1Publication Date: 2020-06-04
- Inventor: Isamu NIKI , Motokazu YAMADA , Masahiko SANO , Shuji SHIOJI
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-Shi
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2146e14a com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2e672f4d com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@497aa42
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L33/00 ; H01L33/20 ; H01L33/22 ; H01L21/02 ; H01L33/26 ; H01L33/32

Abstract:
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
Information query
IPC分类: