公开(公告)号：US5349666A

公开(公告)日：1994-09-20

申请号：US838633

申请日：1992-02-20

Applicant: Mitsuru Adachi ,  Tsunenori Umeki

Inventor： Mitsuru Adachi ,  Tsunenori Umeki

IPC: G06F13/00 ,  G06F1/26 ,  G06F3/00 ,  G06F15/78 ,  G08B21/00 ,  H03H11/00 ,  H03K5/08

CPC classification number: G06F1/26

Abstract: A microcomputer that reduces through current of output buffers, and thus, reduces power line fluctuation that occurs when a large number of the bus lines connected to output buffers change state at the same time. The through current (or punch-through current) is reduced through the use of a detector circuit that detects the number of bus lines which are changing state and a decoder circuit that changes the impedance of output buffers, which drive the bus lines to external components, when the number of bus lines changing state at a given time exceeds a predetermined number.

Abstract translation: 减少输出缓冲器电流的微型计算机，从而减少了当连接到输出缓冲器的大量总线线路同时改变状态时发生的电力线波动。 通过使用检测正在改变状态的总线线路的检测器电路来减少直流电流（或穿通电流），以及改变输出缓冲器的阻抗的解码器电路，其将总线驱动到外部部件 当在给定时间改变状态的总线数量超过预定数量时。

公开(公告)号：US5701942A

公开(公告)日：1997-12-30

申请号：US683023

申请日：1996-07-15

Applicant: Mitsuru Adachi ,  Hiroto Sasaki ,  Satoru Sato

Inventor： Mitsuru Adachi ,  Hiroto Sasaki ,  Satoru Sato

IPC: B22D23/00 ,  C22C1/00 ,  B22D27/08

CPC classification number: B22D23/00 ,  C22C1/005 ,  Y10S164/90

Abstract: A magnesium or aluminum alloy melt having a composition within maximum solubility limits is poured into a mold at a temperature exceeding the alloy liquidus line, but not higher by more than 30.degree. C., the melt is cooled at a rate of at least 1.0.degree. C./sec to form a billet, the billet is heated at a rate of at least 0.5.degree. C./min in a range bound by the alloy solubility line and the alloy solidus line and further heated to a temperature above the alloy solidus line and is maintained at that temperature for 5 to 60 minutes, thereby spheroidizing primary crystals thereof, the billet is then further heated to a temperature below the alloy liquidus line and the semi-solid billet is shaped under pressure. Alternatively, a hypo-eutectic aluminum alloy melt having a composition at or above maximum solubility limits is poured into a billet-forming mold at a temperature exceeding the alloy liquidus line, but not higher by more than 30.degree. C. and the melt is cooled at a rate of at least 1.0.degree. C./sec to form a billet, the billet is then heated to a temperature above the alloy eutectic point, the holding time and temperature are selected such that the liquid-phase content of the billet is adjusted to 20% to 80% and primary crystals thereof are spheroidized and, the semi-solid billet having the adjusted liquid-phase content is shaped under pressure.

Abstract translation: 将具有最大溶解度限度的组成的镁​​或铝合金熔体在超过合金液相线的温度下倒入模具中，但不高于30℃以上，熔体以至少1.0℃的速率冷却 C./sec以形成坯料，坯料在合金溶解度线和合金固相线界限的范围内以至少0.5℃/分钟的速率加热，并进一步加热至高于合金固相线 在该温度下保持5〜60分钟，由此使其一次晶体球化，然后将钢坯进一步加热至低于合金液相线的温度，并且半固体坯料在压力下成形。 或者，具有等于或高于最大溶解度极限的组成的低共熔铝合金熔体在超过合金液相线的温度下倒入成型模具中，但不高于30℃，熔体被冷却 以至少1.0℃/秒的速率形成坯料，然后将坯料加热至高于合金共晶点的温度，选择保持时间和温度使得坯料的液相含量被调节 至20％至80％，其一次晶体被球化，并且具有调节的液相含量的半固体坯料在压力下成形。

公开(公告)号：US07121320B2

公开(公告)日：2006-10-17

申请号：US11008749

申请日：2004-12-09

Applicant: Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

Inventor： Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

IPC: B22D27/04

CPC classification number: C22C1/005 ,  B22D17/007 ,  Y10S164/90

Abstract: A method of shaping a semisolid metal comprising pouring a molten aluminum or magnesium alloy which contains a crystal grain refiner and which is superheated to less than 50° C. above a liquidus temperature of aluminum or magnesium, directly into a vessel without using a cooling jig, maintaining the alloy in the vessel for 30 seconds to 30 minutes as a resultant melt is cooled to a temperature where a specified liquid fraction is established such that a temperature of the poured alloy which is liquid and superheated to less than 10° C. above the liquidus temperature or which is partially solid, partially liquid and at a temperature of less than 5° C. below the liquidus temperature decreases from an initial level and passes through a temperature zone 5° C. below the liquidus temperature within at least 10 minutes, whereby fine primary crystals are generated in the alloy, recovering the alloy from the vessel, supplying the alloy into a mold, and shaping the alloy under pressure.

Abstract translation: 一种成形半固体金属的方法，包括将含有晶粒细化剂的熔融铝或镁合金浇注，并将其过热至低于铝或镁的液相线温度以上的50℃以上，而不使用冷却夹具 ，将合金保持在容器中30秒至30分钟，将所得熔体冷却至指定液体分数建立的温度，使得液态并过热至低于10℃的浇注合金的温度高于 液相线温度或部分固体，部分液体，低于液相温度的温度低于5℃，从初始水平降低，并在至少10分钟内通过低于液相线温度5℃的温度区域 从而在合金中产生细的一次晶体，从容器中回收合金，将合金供给到模具中，并在压力下成形合金。

公开(公告)号：US07015573B2

公开(公告)日：2006-03-21

申请号：US11095880

申请日：2005-03-31

Applicant: Shoji Morinaga ,  Mitsuru Adachi ,  Yuji Himeno

Inventor： Shoji Morinaga ,  Mitsuru Adachi ,  Yuji Himeno

IPC: H01L23/22 ,  H01L23/24

CPC classification number: B29C45/14418 ,  B29C45/14221 ,  B29C45/14639 ,  B29C2045/0036 ,  B29L2031/3481 ,  H05K1/117 ,  H05K3/284

Abstract: In a method for molding module electronic devices, an outer edge portion (24a′) of each of plural terminals (24) arranged on a base board (23) is subjected to press-deformation processing by a curved portion (30R) of an upper mold (30) to be shaped into a curved outer end portion (24a) when the upper mold (30) is caused to be in contact with a lower mold (31) for forming a molding space between the upper and lower molds (30:31) in which the base board (23) is positioned, then the molding space is filled with dissolved resin under a condition in which the curved portion (30R) of the upper mold (30) is in tight contact with the curved outer end portion (24a) of each of plural terminals (24), and finally the upper and lower molds (30;31) are separated from each other after the dissolved resin (36) in the molding space has solidified so that a module electronic device provided with the base board (23) on which the plural terminals (24) each having the curved outer end portion (24a) and a resin-molded portion (21;22) which covers the base board (23) with the terminals (24) exposed to the outside is obtained.

Abstract translation: 在模块化电子装置的成型方法中，设置在基板（23）上的多个端子（24）中的每一个的外边缘部分（24a，...）通过弯曲部分（30°R）进行压力变形处理 当上模具（30）与下模具（31）接触以形成上模具和下模具之间的模制空间时，上模具（30）被成形为弯曲的外端部分（24a） （30），其中基板（23）定位在其中，然后在上模具（30）的弯曲部分（30 R）与所述基板（23）紧密接触的状态下，用可溶性树脂填充所述模制空间 在多个端子（24）中的每一个的弯曲的外端部分（24a），最后，在模制空间中的溶解树脂（36）已经固化之后，上模具和下模具（30; 31）彼此分离， 模块电子装置，设置有基板（23），多个端子（24）各自具有铜 获得外露端部（24a）和覆盖基板（23）的树脂模制部分（21; 22），端子（24）暴露于外部。

公开(公告)号：US06851466B2

公开(公告)日：2005-02-08

申请号：US10852952

申请日：2004-05-24

Applicant: Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

Inventor： Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

IPC: B22D17/00 ,  C22C1/00 ,  B22D27/08

CPC classification number: C22C1/005 ,  B22D17/007 ,  Y10S164/90

Abstract: A method of shaping a semisolid metal to provide shaped parts which are produced in a convenient, easy and inexpensive manner, without relying upon the conventional mechanical or electromagnetic agitation. The method includes feeding, without using a cooling jig, into an insulating vessel, a molten alloy containing an element for promoting generation of crystal nuclei and being held to be superheated to less than 100° C. above a liquidus temperature of the alloy; maintaining the molten alloy in the insulating vessel for 5 seconds to 60 minutes as the alloy is cooled at a cooling rate of 0.01° C./s to 3.0° C./s thereby crystallizing fine primary spherical crystals in an alloy solution containing a specified liquid fraction; and feeding the alloy solution into a forming mold for shaping the alloy under pressure.

Abstract translation: 一种使半固体金属成形以提供成形部件的方法，所述成形部件以方便，容易和便宜的方式制造，而不依赖于传统的机械或电磁搅拌。 该方法包括：在不使用冷却夹具的情况下，将绝缘容器，含有促进晶核产生的元素的熔融合金进料并保持过热至低于合金的液相线温度以下的100℃以下; 将熔融合金保持在绝缘容器中5秒至60分钟，因为合金以0.01℃/ s至3.0℃/ s的冷却速率冷却，从而使含有规定的合金溶液的合金溶液中的细小的初级球形晶体结晶 液体馏分 并将合金溶液进料到用于在压力下成形合金的成型模具中。

公开(公告)号：US20090302450A1

公开(公告)日：2009-12-10

申请号：US12094314

申请日：2006-10-30

Applicant: Tomoshi Ohde ,  Fujio Kanayama ,  Mitsuru Adachi ,  Tetsunori Nimi ,  Hidetoshi Kusano ,  Yuji Nashitani

Inventor： Tomoshi Ohde ,  Fujio Kanayama ,  Mitsuru Adachi ,  Tetsunori Nimi ,  Hidetoshi Kusano ,  Yuji Nashitani

IPC: H01L23/28 ,  H01L21/56

CPC classification number: H01L23/3128 ,  H01L21/565 ,  H01L23/3737 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/50 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A semiconductor device is provided in which the heat dissipation characteristic of a flip-chip mounted semiconductor chip is improved. A semiconductor device is provided with a substrate, a semiconductor flip-chip mounted on the substrate, a sealing resin layer for sealing around the semiconductor flip-chip. A sealing resin layer for sealing the semiconductor chip is formed around the semiconductor chip. In this semiconductor device, the back surface of the semiconductor chip is exposed and is convex with respect to the upper surface of the sealing resin layer.

Abstract translation: 提供一种半导体器件，其中提供了安装倒装芯片的半导体芯片的散热特性。 半导体器件设置有衬底，安装在衬底上的半导体倒装芯片，用于密封半导体倒装芯片周围的密封树脂层。 在半导体芯片周围形成用于密封半导体芯片的密封树脂层。 在该半导体装置中，半导体芯片的背面露出，相对于密封树脂层的上表面凸出。

公开(公告)号：US20080185712A1

公开(公告)日：2008-08-07

申请号：US11968840

申请日：2008-01-03

Applicant: Fujio Kanayama ,  Tomoshi Ohde ,  Mitsuru Adachi ,  Tetsunori Niimi ,  Hidetoshi Kusano ,  Yuji Nishitani

Inventor： Fujio Kanayama ,  Tomoshi Ohde ,  Mitsuru Adachi ,  Tetsunori Niimi ,  Hidetoshi Kusano ,  Yuji Nishitani

IPC: H01L23/36 ,  H01L21/56

CPC classification number: H01L23/315 ,  H01L21/565 ,  H01L23/055 ,  H01L23/3121 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A semiconductor device is provided in which the effect of the heat generated by a flip-chip mounted semiconductor on resin is suppressed. The semiconductor device includes: a substrate; a semiconductor chip which is mounted on the substrate with a front surface of the semiconductor chip facing downward; and a molding resin layer provided on a semiconductor chip-mounted surface of the substrate so as to be spaced apart from the semiconductor chip and to surround the semiconductor chip. In addition, the upper surface of the molding resin layer is positioned higher than the rear surface of the semiconductor chip.

Abstract translation: 提供一种半导体器件，其中抑制由倒装芯片安装的半导体产生的热对树脂的影响。 半导体器件包括：衬底; 半导体芯片，其安装在基板上，半导体芯片的前表面朝下; 以及模塑树脂层，设置在与半导体芯片间隔开并围绕半导体芯片的基板的半导体芯片安装表面上。 此外，成型树脂层的上表面位于比半导体芯片的后表面更高的位置。

公开(公告)号：US20050167813A1

公开(公告)日：2005-08-04

申请号：US11095880

申请日：2005-03-31

Applicant: Shoji Morinaga ,  Mitsuru Adachi ,  Yuji Himeno

Inventor： Shoji Morinaga ,  Mitsuru Adachi ,  Yuji Himeno

IPC: B29C45/14 ,  H05K1/11 ,  H05K3/28 ,  H01L23/02

CPC classification number: B29C45/14418 ,  B29C45/14221 ,  B29C45/14639 ,  B29C2045/0036 ,  B29L2031/3481 ,  H05K1/117 ,  H05K3/284

Abstract: In a method for molding module electronic devices, an outer edge portion (24a′) of each of plural terminals (24) arranged on a base board (23) is subjected to press-deformation processing by a curved portion (30R) of an upper mold (30) to be shaped into a curved outer end portion (24a) when the upper mold (30) is caused to be in contact with a lower mold (31) for forming a molding space between the upper and lower molds (30:31) in which the base board (23) is positioned, then the molding space is filled with dissolved resin under a condition in which the curved portion (30R) of the upper mold (30) is in tight contact with the curved outer end portion (24a) of each of plural terminals (24), and finally the upper and lower molds (30;31) are separated from each other after the dissolved resin (36) in the molding space has solidified so that a module electronic device provided with the base board (23) on which the plural terminals (24) each having the curved outer end portion (24a) and a resin-molded portion (21;22) which covers the base board (23) with the terminals (24) exposed to the outside is obtained.

Abstract translation: 在模块化电子装置的成型方法中，设置在基板（23）上的多个端子（24）中的每一个的外边缘部分（24a，...）通过弯曲部分（30°R）进行压力变形处理 当上模具（30）与下模具（31）接触以形成上模具和下模具之间的模制空间时，上模具（30）被成形为弯曲的外端部分（24a） （30），其中基板（23）定位在其中，然后在上模具（30）的弯曲部分（30 R）与所述基板（23）紧密接触的状态下，用可溶性树脂填充所述模制空间 在多个端子（24）中的每一个的弯曲的外端部分（24a），最后，在模制空间中的溶解树脂（36）已经固化之后，上模具和下模具（30; 31）彼此分离， 模块电子装置，设置有基板（23），多个端子（24）各自具有铜 获得外露端部（24a）和覆盖基板（23）的树脂模制部分（21; 22），端子（24）暴露于外部。

公开(公告)号：US20050161127A1

公开(公告)日：2005-07-28

申请号：US11008749

申请日：2004-12-09

Applicant: Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

Inventor： Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato

IPC: B22D17/00 ,  C22C1/00 ,  B22D17/08 ,  B22D23/00 ,  B22D25/00 ,  C22F1/04

CPC classification number: C22C1/005 ,  B22D17/007 ,  Y10S164/90

Abstract: A method of shaping a semisolid metal comprising pouring a molten aluminum or magnesium alloy which contains a crystal grain refiner and which is superheated to less than 50° C. above a liquidus temperature of aluminum or magnesium, directly into a vessel without using a cooling jig, maintaining the alloy in the vessel for 30 seconds to 30 minutes as a resultant melt is cooled to a temperature where a specified liquid fraction is established such that a temperature of the poured alloy which is liquid and superheated to less than 10° C. above the liquidus temperature or which is partially solid, partially liquid and at a temperature of less than 5° C. below the liquidus temperature decreases from an initial level and passes through a temperature zone 5° C. below the liquidus temperature within at least 10 minutes, whereby fine primary crystals are generated in the alloy, recovering the alloy from the vessel, supplying the alloy into a mold, and shaping the alloy under pressure.

Abstract translation: 一种成形半固体金属的方法，包括将含有晶粒细化剂的熔融铝或镁合金浇注，并将其过热至低于铝或镁的液相线温度以上的50℃以上，而不使用冷却夹具 ，将合金保持在容器中30秒至30分钟，将所得熔体冷却至指定液体分数建立的温度，使得液态并过热至低于10℃的浇注合金的温度高于 液相线温度或部分固体，部分液体，低于液相温度的温度低于5℃，从初始水平降低，并在至少10分钟内通过低于液相线温度5℃的温度区域 从而在合金中产生细的一次晶体，从容器中回收合金，将合金供给到模具中，并在压力下成形合金。

公开(公告)号：US06769473B1

公开(公告)日：2004-08-03

申请号：US09490983

申请日：2000-01-24

Applicant: Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato ,  Atsushi Yoshida

Inventor： Mitsuru Adachi ,  Hiroto Sasaki ,  Yasunori Harada ,  Tatsuo Sakamoto ,  Satoru Sato ,  Atsushi Yoshida

IPC: B22D2708

CPC classification number: C22C1/005 ,  B22D17/007 ,  Y10S164/90

Abstract: A method and apparatus for the semisolid forming of alloys to enable shaped parts having a fine-grained, spherical thixotropic structure to be produced in a convenient, easy and inexpensive manner without relying upon the conventional mechanical or electromagnetic agitation. In the method, a molten alloy having crystal nuclei at a temperature not lower than the liquidus temperature or a partially solid, partially molten alloy having crystal nuclei at a temperature not lower than a molding temperature is fed into an insulated vessel and is maintained in the insulated vessel for 5 seconds to 60 minutes as it is cooled to the molding temperature where a specified liquid fraction is established, thereby crystallizing fine primary crystals in the alloy solution, and the alloy is fed into a forming mold, where it is shaped under pressure.

Abstract translation: 一种用于半固态成形合金的方法和装置，使得能够以方便，容易和便宜的方式制造具有细粒度，球形触变结构的成形部件，而不依赖于常规的机械或电磁搅拌。 在该方法中，在不低于液相线温度的温度下具有晶核的熔融合金或在不低于成型温度的温度下具有晶核的部分固体部分熔融的合金进料到绝缘容器中并保持在 隔热容器5秒钟至60分钟，将其冷却至建立特定液体分数的成型温度，从而在合金溶液中结晶出细小的一次晶体，并将该合金送入成型模具中，在其中形成压力 。