公开(公告)号：US20020139297A1

公开(公告)日：2002-10-03

申请号：US10103797

申请日：2002-03-25

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Saburo Wakita ,  Yoshinobu Nakada ,  Junichi Sasaki ,  Yuji Ishiwari

IPC分类号： C30B001/00 ,  C30B035/00

CPC分类号： C30B29/06 ,  C30B11/007 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.

公开(公告)号：US20020014574A1

公开(公告)日：2002-02-07

申请号：US09935549

申请日：2001-08-24

申请人： Mitsubishi Materials Corporation

发明人： Saburo Wakita ,  Akira Mitsuhashi ,  Jun-ichi Sasaki

IPC分类号： C09D001/02 ,  B28B007/28 ,  B28B007/34 ,  C04B028/26 ,  C04B035/66 ,  B22D019/00 ,  B22D007/06 ,  B22D007/10 ,  B22D041/14 ,  B22D041/16 ,  B22D041/22 ,  B22D041/44

CPC分类号： C30B11/002

摘要： A mold for producing a silicon ingot having a layered structure comprising an inner silica layer containing at least one layer in which a fused silica powder with a particle size of 100 nullm or less and a fine fused silica sand with a particle size of 100-300 nullm is bonded with a silica binder, and an outer silica layer containing at least one layer in which a fused silica powder with a particle size of 100 nullm or less and a coarse fused silica sand with a particle size of 500-1500 nullm is bonded with a silica binder.