公开(公告)号：US20240233828A9

公开(公告)日：2024-07-11

申请号：US17970315

申请日：2022-10-20

Applicant: Micron Technology, Inc.

Inventor： Matteo Impala' ,  Mattia Robustelli ,  Innocenzo Tortorelli

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/26 ,  G11C16/3404

Abstract: Methods, apparatuses and systems related to reading data from memory cells configured to store more than one bit are described. The apparatus may be configured to determine a polarity data associated with reading data stored at a target location. In reading the data stored at the target location, the apparatus may apply one or more voltage levels across different polarities according to the determined polarity data.

公开(公告)号：US20240135996A1

公开(公告)日：2024-04-25

申请号：US17970315

申请日：2022-10-19

Applicant: Micron Technology, Inc.

Inventor： Matteo Impala' ,  Mattia Robustelli ,  Innocenzo Tortorelli

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/26 ,  G11C16/3404

Abstract: Methods, apparatuses and systems related to reading data from memory cells configured to store more than one bit are described. The apparatus may be configured to determine a polarity data associated with reading data stored at a target location. In reading the data stored at the target location, the apparatus may apply one or more voltage levels across different polarities according to the determined polarity data.

公开(公告)号：US20240029796A1

公开(公告)日：2024-01-25

申请号：US17868750

申请日：2022-07-19

Applicant: Micron Technology, Inc.

Inventor： Innocenzo Tortorelli ,  Mattia Robustelli ,  Alessandro Sebastiani ,  Matteo Impala' ,  Fabio Pellizzer

IPC: G11C16/10 ,  G11C16/20 ,  G11C16/04

CPC classification number: G11C16/102 ,  G11C16/20 ,  G11C16/0425

Abstract: Systems, methods, and apparatuses are provided for unipolar programming of memory cells in a semiconductor device. A memory has a plurality of self-selecting memory cells and circuitry configured to program a self-selecting memory cell of the plurality of self-selecting memory cells to a first data state or a second data state by applying a current pulse to the self-selecting memory cell. The current is a set pulse or a reset pulse. The set pulse and the reset pulse have a same polarity.