公开(公告)号：US20240329867A1

公开(公告)日：2024-10-03

申请号：US18584993

申请日：2024-02-22

Applicant: Micron Technology, Inc.

Inventor： Yee Yang Tay ,  Lei Zhang ,  Steve Kientz ,  Edric Goh

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0629 ,  G06F3/0679

Abstract: Methods, apparatuses and systems related to tracking charge loss are described. An apparatus may include a tracking mechanism configured to make direct measurements for tracking charge loss in first-type cells. The apparatus may be configured to designate a set of the first-type cells as proxy for modeling charge loss at second-type cells having a different storage density than the first-type cells. The apparatus may use the tracking mechanism to make measurements on the proxy set of the first-type cells and translate the measurement to account for the charge loss at the second-type cells.

公开(公告)号：US20240045754A1

公开(公告)日：2024-02-08

申请号：US17880155

申请日：2022-08-03

Applicant: Micron Technology, Inc.

Inventor： Lei Zhang ,  Francis Chee Khai Chew ,  Michael Miller

IPC: G06F11/07 ,  G06N5/02

CPC classification number: G06F11/0793 ,  G06N5/022 ,  G06F11/073

Abstract: A processing device in a memory sub-system identifies a set of parameters associated with one or more errors detected with respect to a memory device of a memory sub-system. A vector representing the set of parameters is generated. Based on the vector, a classification value corresponding to the one or more errors is generated. Based on the classification value, a set of error recovery operations is selected from a plurality of sets of error recovery operations, and the set of error recovery operations is executed.

公开(公告)号：US20240282390A1

公开(公告)日：2024-08-22

申请号：US18583197

申请日：2024-02-21

Applicant: Micron Technology, Inc.

Inventor： Lei Zhang ,  Sampath Ratnam ,  Steven Michael Kientz

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3404 ,  G11C16/26 ,  G11C16/349

Abstract: Various embodiments use a feedback-control loop to track slow charge loss (SCL) for a memory cell of a memory device, which can be used to adjust one or more read level voltages used to read data from the memory cell.

公开(公告)号：US12197277B2

公开(公告)日：2025-01-14

申请号：US17880155

申请日：2022-08-03

Applicant: Micron Technology, Inc.

Inventor： Lei Zhang ,  Francis Chee Khai Chew ,  Michael Miller

IPC: G06F11/07 ,  G06N5/022

Abstract: A processing device in a memory sub-system identifies a set of parameters associated with one or more errors detected with respect to a memory device of a memory sub-system. A vector representing the set of parameters is generated. Based on the vector, a classification value corresponding to the one or more errors is generated. Based on the classification value, a set of error recovery operations is selected from a plurality of sets of error recovery operations, and the set of error recovery operations is executed.