公开(公告)号：US11604147B2

公开(公告)日：2023-03-14

申请号：US17522819

申请日：2021-11-09

Applicant: Massachusetts Institute of Technology

Inventor： Eveline Postelnicu ,  Samarth Aggarwal ,  Kazumi Wada ,  Jurgen Michel ,  Lionel C. Kimerling ,  Michelle L. Clark ,  Anuradha M. Agarwal

IPC: G01N21/77 ,  G02B6/125 ,  H01L21/60 ,  H01L21/02

Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 μm.

公开(公告)号：US20220065793A1

公开(公告)日：2022-03-03

申请号：US17522819

申请日：2021-11-09

Applicant: Massachusetts Institute of Technology

Inventor： Eveline Postelnicu ,  Samarth Aggarwal ,  Kazumi WADA ,  Jurgen MICHEL ,  Lionel C. KIMERLING ,  Michelle L. Clark ,  Anuradha M. AGARWAL

IPC: G01N21/77 ,  G02B6/125

Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 μm.

公开(公告)号：US11204327B2

公开(公告)日：2021-12-21

申请号：US16691007

申请日：2019-11-21

Applicant: Massachusetts Institute of Technology

Inventor： Eveline Postelnicu ,  Samarth Aggarwal ,  Kazumi Wada ,  Jurgen Michel ,  Lionel C. Kimerling ,  Michelle L. Clark ,  Anuradha M. Agarwal

IPC: G01N21/77 ,  G02B6/125 ,  H01L21/60 ,  H01L21/02

Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 μm.