公开(公告)号：US20240280750A1

公开(公告)日：2024-08-22

申请号：US18444287

申请日：2024-02-16

Applicant: Massachusetts Institute of Technology

Inventor： Drew Michael Weninger ,  Anuradha M. AGARWAL ,  Lionel C. KIMERLING ,  Samuel Serna

IPC: G02B6/122 ,  G02B6/12

CPC classification number: G02B6/1228 ,  G02B2006/12061

Abstract: Die-to-die electrical interconnects, optical couplers, and related methods for electronic and photonic co-packaging are described. Optical couplers include multi-segmented tapered waveguide core segments, slotted core segments, and graded refractive index structures to significantly relax alignment tolerances between dies. Conductive nanopillars, conductive pads, and conductive micropillars can be used to make electrical connections between circuitry on the interconnected dies. The electrical connections can be used to self-align the optical couplers between the dies. Due to relaxed optical alignment tolerances, electrical interconnects and optical coupling between dies can be made in the same die-to-die bonding step.

公开(公告)号：US20220065793A1

公开(公告)日：2022-03-03

申请号：US17522819

申请日：2021-11-09

Applicant: Massachusetts Institute of Technology

Inventor： Eveline Postelnicu ,  Samarth Aggarwal ,  Kazumi WADA ,  Jurgen MICHEL ,  Lionel C. KIMERLING ,  Michelle L. Clark ,  Anuradha M. AGARWAL

IPC: G01N21/77 ,  G02B6/125

Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 μm.