公开(公告)号：US5014105A

公开(公告)日：1991-05-07

申请号：US529762

申请日：1990-05-31

Applicant: Masayuki Hata ,  Tsunenori Umeki

Inventor： Masayuki Hata ,  Tsunenori Umeki

IPC: H01L27/08 ,  H01L27/092

CPC classification number: H01L27/0921

Abstract: A complementary IC device comprises: an n-semiconductor substrate; a p-well formed within the n-substrate: a n-channel FET (field effect transistor) formed on the p-well, the n-channel FET including an n-source connected to a first grounded line and an n-drain connected to an output line; a p-channel FET formed on the n-substrate, the p-channel FET including a p-source connected to a first voltage source line and a p-drain connected to the output line; a contact p-region formed on the p-well for providing electrical connection between the p-well and a second grounded line; and a contact n-region formed on the n-substrate for providing electrical connection between the n-substrate and a second voltage source line.

Abstract translation: 互补IC器件包括：n半导体衬底; 形成在n衬底内的p阱：形成在p阱上的n沟道FET（场效应晶体管），n沟道FET包括连接到第一接地线的n源极和连接到n阱的n沟道 到输出线; 形成在所述n衬底上的p沟道FET，所述p沟道FET包括连接到第一电压源线的p源和连接到所述输出线的p型漏极; 形成在p阱上的用于在p阱和第二接地线之间提供电连接的接触p区; 以及形成在n衬底上的接触n区，用于提供n衬底和第二电压源线之间的电连接。

公开(公告)号：US08750343B2

公开(公告)日：2014-06-10

申请号：US12680412

申请日：2008-09-25

Applicant: Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

Inventor： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

IPC: H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/18 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02208 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02292 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/42

Abstract: A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).

Abstract translation: 可以获得能够抑制制造工序的复杂化和发光效率降低的氮化物系半导体发光装置。 该氮化物系半导体发光元件（50）具有形成在基板（（1）的（1-100）面的主面上的氮化物系半导体器件层，具有发光层 26），具有（1-100）面的主表面的小面（50a），形成在包括氮化物类半导体器件层（23）的发光层（26）的区域的一端的端部，由 （（1-100）面）的方向延伸的（000-1）面，以及形成在与该面相对的区域上的反射面（50c） 由所述氮化物基半导体器件层（23）的生长表面形成的所述（000-1）面的（50a），所述生长表面沿着相对于所述刻面以角度θ倾斜的方向（大约）62°延伸; （50a）。

公开(公告)号：US20140043569A1

公开(公告)日：2014-02-13

申请号：US14113062

申请日：2012-04-13

Applicant: Kohji Yabuta ,  Tomotoshi Tsujioka ,  Kosuke Nagata ,  Mikihiro Noma ,  Masayuki Hata ,  Kiyoshi Inada ,  Hideaki Takizawa ,  Masahiro Kihara

Inventor： Kohji Yabuta ,  Tomotoshi Tsujioka ,  Kosuke Nagata ,  Mikihiro Noma ,  Masayuki Hata ,  Kiyoshi Inada ,  Hideaki Takizawa ,  Masahiro Kihara

IPC: G02F1/1335

CPC classification number: G02F1/133509 ,  G02B5/008 ,  G02B27/2214 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1345 ,  G02F1/1347 ,  G02F2001/133354 ,  G02F2001/133388 ,  G02F2201/44 ,  G02F2202/28 ,  G06F3/041 ,  H04N13/31

Abstract: A liquid crystal display device includes a liquid crystal display panel, a functional panel, a photo curable adhesive, a transparent electrode, and a light blocking line. The liquid crystal panel includes a display area to display an image and a non-display area surrounding the display area. The functional panel is attached to the liquid crystal panel, and includes a display overlapping area overlapping with the display area and a display non-overlapping area overlapping with the non-display area in a plan view. The photo curable adhesive is arranged between the panels and cured by light applied thereto. The transparent electrode is arranged in the display overlapping area and made of light transmissive conductive material. The light blocking line is arranged in the display non-overlapping area and made of light shielding metal material. The light blocking line partially has a light-transmission cutout that is configured to allow the light to pass therethrough.

Abstract translation: 液晶显示装置包括液晶显示面板，功能面板，光固化粘合剂，透明电极和遮光线。 液晶面板包括显示图像的显示区域和围绕显示区域的非显示区域。 功能面板附接到液晶面板，并且在平面图中包括与显示区域重叠的显示器重叠区域和与非显示区域重叠的显示器非重叠区域。 光固化粘合剂布置在面板之间并通过施加于其上的光固化。 透明电极布置在显示器重叠区域中并由透光导电材料制成。 遮光线布置在显示器非重叠区域中，由遮光金属材料制成。 遮光线部分地具有被配置为允许光通过的光透射切口。

公开(公告)号：US20120299052A1

公开(公告)日：2012-11-29

申请号：US13576954

申请日：2011-02-04

Applicant: Nobuhiko Hayashi ,  Masayuki Hata

Inventor： Nobuhiko Hayashi ,  Masayuki Hata

IPC: H01L33/48

CPC classification number: H01S5/02204 ,  G11B7/127 ,  H01L23/26 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02244 ,  H01S5/02296 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.

Abstract translation: 可以获得能够抑制半导体发光元件劣化并且能够抑制封装尺寸放大的半导体发光器件。 半导体发光器件包括半导体发光元件和密封半导体发光元件的封装。 封装包括安装有半导体发光元件的基座部分和安装在基座部分上用于覆盖半导体发光元件的盖部分。 底座部分和盖部分中的至少一个由树脂和气体吸收剂的混合物制成。

公开(公告)号：US20120249484A1

公开(公告)日：2012-10-04

申请号：US13515296

申请日：2010-10-26

Applicant: Masayuki Hata ,  Toshiaki Nakagawa ,  Toshiyuki Yoshimizu

Inventor： Masayuki Hata ,  Toshiaki Nakagawa ,  Toshiyuki Yoshimizu

IPC: G06F3/042

CPC classification number: G06F3/0421 ,  G02F1/13338

Abstract: A coordinate sensor of the present invention includes light emitting diodes (10) and line sensors (13) each including light receiving elements (13s), and further includes, between the light emitting diodes (10) and the light receiving elements (13s), wavelength selective reflection mirrors (11) for allowing light emitted from the light emitting diodes (10) to be selectively incident to the light receiving elements (13s).

Abstract translation: 本发明的坐标传感器包括各自包括光接收元件（13s）的发光二极管（10）和线传感器（13），并且还包括在发光二极管（10）和光接收元件（13）之间， 用于允许从发光二极管（10）发射的光选择性地入射到光接收元件（13）的波长选择反射镜（11）。

公开(公告)号：US08121163B2

公开(公告)日：2012-02-21

申请号：US12047924

申请日：2008-03-13

Applicant: Saburo Nakashima ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takenori Goto

Inventor： Saburo Nakashima ,  Yasuhiko Nomura ,  Masayuki Hata ,  Takenori Goto

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/0207 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Abstract translation: 获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。 该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧 固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离， 第一和第二个方向和基地之间大的扭曲。

公开(公告)号：US08085825B2

公开(公告)日：2011-12-27

申请号：US12043724

申请日：2008-03-06

Applicant: Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuyuki Bessho

Inventor： Masayuki Hata ,  Yasumitsu Kunoh ,  Yasuyuki Bessho

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/0216 ,  H01L2224/48247 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2304/04

Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.

Abstract translation: 获得了当半导体激光二极管部分的宽度小时也能够抑制半导体激光二极管处理困难的半导体激光二极管装置。 这种制造半导体激光二极管装置的方法包括以下步骤：在与第一方向交叉的第二方向上以规定的间隔在第一基板上形成多个第一半导体激光二极管部分，其中第一方向与空腔延伸，将多个第一半导体激光二极管部分 的第一半导体激光二极管部分分配到第二基板，将与第二基板接合的多个第一半导体激光二极管部分中的一个或一些与第一基板分离; 以及沿着所述第二方向分割所述第二基板。

公开(公告)号：US08064492B2

公开(公告)日：2011-11-22

申请号：US12693169

申请日：2010-01-25

Applicant: Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

Inventor： Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

IPC: H01S5/00

CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B7/22 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4087 ,  H04N9/3161 ,  H01L2924/00014

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract translation: 一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二 沿着至少第一凹槽的半导体激光器件衬底。

公开(公告)号：US08013344B2

公开(公告)日：2011-09-06

申请号：US12186168

申请日：2008-08-05

Applicant: Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

Inventor： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

IPC: H01L27/15

CPC classification number: H01L33/025 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：在包括上表面，下表面和位错集中区域的基板的上表面上形成半导体器件层，以便将第一侧部分靠近上表面部分，以及 第二侧更靠近下表面，通过沿着位错集中区域的至少一部分去除第二侧的基板，在下表面上方露出位错集中区域不存在的部分，并且在第二侧上形成电极 一部分。

公开(公告)号：US07978744B2

公开(公告)日：2011-07-12

申请号：US12236616

申请日：2008-09-24

Applicant: Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

Inventor： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC: H01S5/028

CPC classification number: H01S5/32341 ,  H01S5/028 ,  H01S5/0282

Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Abstract translation: 氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氮作为构成元素的第一保护膜。 在另一方面形成包括氧作为构成元素的第二保护膜。