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    Electrodeposition film forming method, and semiconductor apparatus
    2.
    发明授权
    Electrodeposition film forming method, and semiconductor apparatus 失效
    电沉积膜形成方法和半导体装置

    公开(公告)号：US07052991B2

    公开(公告)日：2006-05-30

    申请号：US11014678

    申请日：2004-06-17

    申请人： Masaki Mizuno

    发明人： Masaki Mizuno

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76898 ,  C25D5/02 ,  C25D13/12

    摘要： An electrodeposition film forming method includes forming an electrodeposited film of an electrodeposition coating material having good thermal fluidity by a first electrodeposition; forming an electrodeposition film in a very small through-hole provided on a conductive or semiconductive substrate; removing electrodeposited film at an opening portion of the through-hole under a wet-coated condition; and hardening the electrodeposition film to obtain a flat portion other than the opening portion. Then, a second electrodeposition film of an electrodeposition coating material having good thermal fluidity is formed around the opening portion and is hardened to coat uncoated portions of the opening portion remaining after the first deposition. Accordingly, a flat inner surface of the through-hole is obtained, any exposed portions of an underlayer at the opening of the through-hole are covered and the opening of the through-hole is maintained.

    摘要翻译： 电沉积膜形成方法包括通过第一电沉积形成具有良好热流动性的电沉积涂料的电沉积膜; 在设置在导电或半导体衬底上的非常小的通孔中形成电沉积膜; 在湿式涂布条件下在通孔的开口部分去除电沉积膜; 并使电沉积膜硬化以获得除开口部分以外的平坦部分。 然后，在开口部周围形成具有良好热流动性的电沉积涂料的第二电沉积膜，并且硬化以涂覆在第一次沉积后残留的开口部分的未涂覆部分。 因此，可以得到贯通孔的平坦的内表面，覆盖通孔开口处的底层的露出部分，并保持贯通孔的开口。

    Sound generation method, computer-readable storage medium, stand-alone sound generation and playback apparatus, and network-communicative sound generation and playback system
    3.
    发明申请
    Sound generation method, computer-readable storage medium, stand-alone sound generation and playback apparatus, and network-communicative sound generation and playback system 审中-公开
    声音生成方法，计算机可读存储介质，独立声音生成和重放装置以及网络通信声音生成和重放系统

    公开(公告)号：US20060020160A1

    公开(公告)日：2006-01-26

    申请号：US10529288

    申请日：2003-12-12

    申请人： Hidenori Ito ,  Shohei Kato ,  Masaki Mizuno

    发明人： Hidenori Ito ,  Shohei Kato ,  Masaki Mizuno

    IPC分类号： A61M21/00 ,  A61B5/04

    CPC分类号： A61M16/208 ,  A61M21/00 ,  A61M2021/0027 ,  A61M2230/04 ,  A61M2230/10 ,  A61M2230/40 ,  A61M2230/60

    摘要： An object is to provide a sound generation method for basic information having chaos and fractal, so that a sound is generated by converting basic information having chaos and fractal into data that are numerically operable, by calculating characteristics of chaos and fractal from the basic information, which has chaos and fractal, and by applying a generation rule to the data of chaos and fractal. This objective is achieved by a sound generation method for basic information having chaos and fractal, the method comprising a basic information converting process, which converts basic information having chaos and fractal into data that are numerically operable, a chaotic space generating process, which calculates a chaos attractor and a fractal feature on the basis of the data converted by the basic information converting process and generates a chaotic space, a fractal space generating process, which generates a fractal space, and a sound generating process, which generates a sound file, in compliance with a predetermined sound generation rule, from the data in the chaotic space and the fractal space generated by the chaotic space generating process and the fractal space generating process.

    摘要翻译： 本发明的目的是提供一种具有混沌和分形的基本信息的声音生成方法，通过从基本信息计算混沌和分形特征，通过将具有混沌和分形的基本信息转换成可数值的数据来产生声音， 它具有混沌和分形，并且对混沌和分形数据应用生成规则。 该目的通过具有混沌和分形的基本信息的声音生成方法来实现，该方法包括基本信息转换处理，其将具有混沌和分形的基本信息转换成数字可数的数据，该混沌空间生成处理计算 基于由基本信息转换处理转换的数据的混沌吸引子和分形特征，并生成混沌空间，生成分形空间的分形空间生成处理和生成声音文件的声音生成处理 符合预定的声音生成规则，从混沌空间中的数据和由混沌空间生成处理和分形空间生成处理产生的分形空间。

    Electrodeposition film forming method, and semiconductor apparatus
    5.
    发明申请
    Electrodeposition film forming method, and semiconductor apparatus 失效
    电沉积膜形成方法和半导体装置

    公开(公告)号：US20050092612A1

    公开(公告)日：2005-05-05

    申请号：US11014678

    申请日：2004-12-17

    申请人： Masaki Mizuno

    发明人： Masaki Mizuno

    IPC分类号： C25D13/00 ,  C25D5/02 ,  C25D13/06 ,  H01L21/768

    CPC分类号： H01L21/76898 ,  C25D5/02 ,  C25D13/12

    摘要： An electrodeposition film forming method includes forming an electrodeposited film of an electrodeposition coating material having good thermal fluidity by a first electrodeposition; forming an electrodeposition film in a very small through-hole provided on a conductive or semiconductive substrate; removing electrodeposited film at an opening portion of the through-hole under a wet-coated condition; and hardening the electrodeposition film to obtain a flat portion other than the opening portion. Then, a second electrodeposition film of an electrodeposition coating material having good thermal fluidity is formed around the opening portion and is hardened to coat uncoated portions of the opening portion remaining after the first deposition. Accordingly, a flat inner surface of the through-hole is obtained, any exposed portions of an underlayer at the opening of the through-hole are covered and the opening of the through-hole is maintained.

    摘要翻译： 电沉积膜形成方法包括通过第一电沉积形成具有良好热流动性的电沉积涂料的电沉积膜; 在设置在导电或半导体衬底上的非常小的通孔中形成电沉积膜; 在湿式涂布条件下在通孔的开口部分去除电沉积膜; 并使电沉积膜硬化以获得除开口部分以外的平坦部分。 然后，在开口部周围形成具有良好热流动性的电沉积涂料的第二电沉积膜，并且硬化以涂覆在第一次沉积后残留的开口部分的未涂覆部分。 因此，可以得到贯通孔的平坦的内表面，覆盖通孔开口处的底层的露出部分，并保持贯通孔的开口。