公开(公告)号：US4142496A

公开(公告)日：1979-03-06

申请号：US784446

申请日：1977-04-04

申请人： Masaaki Saito ,  Akihiro Ohnishi

发明人： Masaaki Saito ,  Akihiro Ohnishi

IPC分类号： F02M25/07 ,  F02M25/06

CPC分类号： F02M26/56 ,  F02M2026/004 ,  Y10T137/86919

摘要： Two thermally operated control valves which, in cooperation with each other, admit into the vacuum chamber of the diaphragm unit for the EGR control valve atmospheric air only during cold engine operation, both atmospheric air and engine suction vacuum during engine warming-up operation, and engine suction vacuum only during engine normal operation.

摘要翻译： 两个热操作的控制阀，它们彼此配合，仅在冷发动机运行期间进入用于EGR控制阀大气的隔膜单元的真空室中，在发动机预热操作期间，大气和发动机抽吸真空，以及 发动机吸入真空只在发动机正常运行时。

公开(公告)号：US20070278567A1

公开(公告)日：2007-12-06

申请号：US11882626

申请日：2007-08-03

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L29/78

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

公开(公告)号：US4145272A

公开(公告)日：1979-03-20

申请号：US826547

申请日：1977-08-22

申请人： Koyo Nakamura ,  Masayasu Nakajima ,  Akihiro Ohnishi

发明人： Koyo Nakamura ,  Masayasu Nakajima ,  Akihiro Ohnishi

IPC分类号： F02D35/00 ,  G01N27/403 ,  G01N27/407 ,  G01N27/409 ,  G01N27/417 ,  G01N27/46

CPC分类号： G01N27/4075 ,  G01N27/407 ,  G01N27/4078 ,  G01N27/4175

摘要： A platinum reference electrode is disposed on the surface of a blind bore formed in a body of solid zirconia electrolyte and two semi cylindrically shaped measuring electrodes one platinum the other gold are disposed on the outer surface of the body. A first annular insulator supports the body within the casing and defines two chambers on either side thereof while a second annular insulator supports and presses lead wires against the measuring electrodes. A cylindrical connector is inserted into the blind bore to provide good electrical connection between the platinum reference electrode and a lead line. Atmospheric air enters the first chamber and the blind bore while exhaust gases enter the second chamber and contact the measuring electrodes; the platinum/platinum and platinum/gold electrodes produce markedly different signals one of which is used to recalibrate the other as the peak output voltages decrease with time and temperature.

公开(公告)号：US08076202B2

公开(公告)日：2011-12-13

申请号：US12724323

申请日：2010-03-15

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L21/336

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

摘要翻译： 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US20070290239A1

公开(公告)日：2007-12-20

申请号：US11878846

申请日：2007-07-27

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L29/76

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

公开(公告)号：US07180130B2

公开(公告)日：2007-02-20

申请号：US10948262

申请日：2004-09-24

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L29/792

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

公开(公告)号：US4271811A

公开(公告)日：1981-06-09

申请号：US77536

申请日：1979-09-21

申请人： Suzuo Suzuki ,  Yoshitaka Hata ,  Akihiro Ohnishi

发明人： Suzuo Suzuki ,  Yoshitaka Hata ,  Akihiro Ohnishi

IPC分类号： F02M25/07 ,  F02B77/08 ,  F02D21/08 ,  F02D35/02 ,  F02D41/00 ,  F02D41/14 ,  F02B47/08

CPC分类号： F02D41/1498 ,  F02B77/085 ,  F02D21/08 ,  F02D35/021 ,  F02D41/005 ,  F02M26/57 ,  F02D2200/1015 ,  Y02T10/47

摘要： To effect EGR in an internal combustion engine with the maintenance of adequate balance between the suppression of NO.sub.x formation and preservation of stable engine operation, the condition of combustion in the engine is taken as the basis of feedback control of the volume of recirculated exhaust gas so as to correct a deviation of the total amount of the recirculated exhaust gas and unexhausted combustion gas in the combustion chamber from a desired amount. The intensity of an ionic current produced upon combustion in each combustion chamber, the magnitude of mechanical vibration of the engine or the frequency of misfire in a combustion chamber is detected as an exact indication of the condition of combustion.

摘要翻译： 为了在内燃机中实现EGR，在抑制NOx形成和保持稳定的发动机运行之间保持足够的平衡，将发动机中的燃烧条件作为循环排气体积的反馈控制的基础，因此 以便将燃烧室中的再循环废气和未用尽的燃烧气体的总量的偏差从期望的量校正。 在燃烧室中燃烧时产生的离子电流的强度，发动机的机械振动的大小或燃烧室中失火的频率被检测为燃烧条件的精确指示。

公开(公告)号：US4168679A

公开(公告)日：1979-09-25

申请号：US829977

申请日：1977-09-01

申请人： Kenji Ikeura ,  Akihiro Ohnishi

发明人： Kenji Ikeura ,  Akihiro Ohnishi

IPC分类号： F02D41/34 ,  F02D31/00 ,  F02D41/02 ,  F02D41/32 ,  F02D43/00 ,  F02P5/04 ,  F02B3/00

CPC分类号： F02D31/002 ,  F02D43/00

摘要： A fuel control system for internal combustion engines includes a fuel injection control unit responsive to the amount of depression of an accelerator pedal to determine the fuel quantity and an air intake control unit which determines the amount of air to be mixed therewith in response to the determined fuel quantity to correspondingly operate a throttle valve. Fuel and air are supplied to the engine such that they reach the cylinder simultaneously.

摘要翻译： 一种用于内燃机的燃料控制系统，包括一个响应于加速器踏板的下压量以确定燃料量的燃料喷射控制单元，以及一个进气控制单元，该空气进入控制单元根据所确定的燃料量确定与其混合的空气量 燃料量以相应地操作节流阀。 燃料和空气被提供给发动机，使得它们同时到达气缸。

公开(公告)号：US08748266B2

公开(公告)日：2014-06-10

申请号：US13291999

申请日：2011-11-08

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L21/336

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

摘要翻译： 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的方向的深度方向上的第一导电类型的半导体层的主表面形成沟槽， 在沟槽的内表面上形成包括热氧化膜和沉积膜的栅极绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成 用作沟道形成区域的第二导电类型的半导体区域，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US20100173461A1

公开(公告)日：2010-07-08

申请号：US12724323

申请日：2010-03-15

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L21/336

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

摘要翻译： 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。