公开(公告)号：US07755828B2

公开(公告)日：2010-07-13

申请号：US11956626

申请日：2007-12-14

申请人： Marc Currie ,  Igor Vurgaftman ,  Janet W Lou

发明人： Marc Currie ,  Igor Vurgaftman ,  Janet W Lou

IPC分类号： G02F1/01

CPC分类号： H03B17/00

摘要： A method and system for modifying the detected phase of a signal by driving a photodetector into saturation. This system and method differs from current manual and electrical microwave phase modification by using saturation means for modifying the phase. The system and method may use a plurality of the signal generators for saturating the photodetector.

摘要翻译： 一种用于通过将光电检测器驱动到饱和度来修改检测到的信号相位的方法和系统。 该系统和方法与当前的手动和微波相位修改不同，通过使用饱和装置来修改相位。 该系统和方法可以使用多个信号发生器来饱和光电检测器。

公开(公告)号：US20080278794A1

公开(公告)日：2008-11-13

申请号：US11956626

申请日：2007-12-14

申请人： Marc Currie ,  Igor Vurgaftman ,  Janet W. Lou

发明人： Marc Currie ,  Igor Vurgaftman ,  Janet W. Lou

IPC分类号： G02F1/01

CPC分类号： H03B17/00

摘要： A method and system for modifying the detected phase of a signal by driving a photodetector into saturation. This system and method differs from current manual and electrical microwave phase modification by using saturation means for modifying the phase. The system and method may use a plurality of the signal generators for saturating the photodetector.

摘要翻译： 一种用于通过将光电检测器驱动到饱和度来修改检测到的信号相位的方法和系统。 该系统和方法与当前的手动和微波相位修改不同，通过使用饱和装置来修改相位。 该系统和方法可以使用多个信号发生器来饱和光电检测器。

公开(公告)号：US08493654B2

公开(公告)日：2013-07-23

申请号：US13353770

申请日：2012-01-19

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

IPC分类号： H01S5/30

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

摘要翻译： 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

公开(公告)号：US20130048063A1

公开(公告)日：2013-02-28

申请号：US13592524

申请日：2012-08-23

申请人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Matthew P. Lumb ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory Cress ,  Nicholas Ekins-Daukes ,  Paul Stavrinou ,  Jessica Adams ,  Ngai Chan

发明人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Matthew P. Lumb ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory Cress ,  Nicholas Ekins-Daukes ,  Paul Stavrinou ,  Jessica Adams ,  Ngai Chan

IPC分类号： H01L31/0725 ,  G06F17/50

CPC分类号： H01L31/0304 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/06875 ,  Y02E10/544

摘要： A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

公开(公告)号：US20130003770A1

公开(公告)日：2013-01-03

申请号：US13608115

申请日：2012-09-10

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

IPC分类号： H01S5/34 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/3401 ,  H01S5/3422 ,  H01S5/34306

摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

摘要翻译： 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

公开(公告)号：US20120127564A1

公开(公告)日：2012-05-24

申请号：US13353770

申请日：2012-01-19

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

IPC分类号： H01S5/343 ,  B82Y20/00

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

摘要翻译： 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

公开(公告)号：US6100704A

公开(公告)日：2000-08-08

申请号：US69945

申请日：1998-04-30

申请人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

IPC分类号： G01R31/26

CPC分类号： G01R31/2648

摘要： The present invention is a method for determining a carrier conductivity-rier mobility spectrum for a semiconductor sample, having the steps of: exposing the semiconductor sample to a range K of discrete magnetic fields k=1,2, . . . K; for each field obtaining a Hall coefficient R.sub.H and a resistivity .rho., and calculating from R.sub.H (B.sub.k) and .sigma.(B.sub.k) experimental conductivity tensor components .sigma..sub.xx.sup.k (exp) and .sigma..sub.xy.sup.k (exp), and slopes of these conductivity tensor components .sigma.'.sub.xx.sup.k (exp) and .sigma.'.sub.xy.sup.k (exp); selecting a trial carrier conductivity-carrier mobility spectrum s.sub.i corresponding to a plurality I of carrier mobilities .mu..sub.i, i=1,2, . . . I; for each B.sub.j, using this trial carrier conductivity-carrier mobility spectrum to calculate conductivity tensor components .sigma..sub.xx.sup.j and .sigma..sub.xy.sup.j, and slopes of the conductivity tensor components .sigma.'.sub.xx.sup.j and .sigma.'.sub.xy.sup.j ; for each B.sub.j, calculating errors .DELTA..sub.xx.sup.j .ident..sigma..sub.xx.sup.j (exp)-.sigma..sub.xx.sup.j, .DELTA..sub.xy.sup.j .ident..sigma..sub.xy.sup.j (exp)-.sigma..sub.xy.sup.j, .DELTA.'.sub.xx.sup.j (exp)-.sigma.'.sub.xx.sup.j, and .DELTA.'.sub.xy.sup.j .ident..sigma.'.sub.xy.sup.j (exp)-.sigma.'.sub.xy.sup.j, and calculating therefrom a total weighted squared error .chi..sub.j.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, calculating an optimum change to said trial carrier conductivity-carrier mobility spectrum .delta.s.sub.ij, and calculating therefrom a modified total weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j, determining a minimum carrier mobility point .mu..sub.iminj whose corresponding change .delta.s.sub.ij that yields the lowest weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, changing the carrier conductivity-carrier mobility spectrum by not more than .delta.s.sub.ij.

摘要翻译： 本发明是用于确定半导体样品的载流子传导率 - 载流子迁移率谱的方法，具有以下步骤：将半导体样品暴露于离散磁场k = 1,2的范围K。 。 。 K; 对于每个场获得霍尔系数RH和电阻率rho，并且从RH（Bk）和西格马（Bk）实验电导率张量分量sigma xxk（exp）和sigma xyk（exp）计算，并且这些电导率张量分量sigma' xxk（exp）和sigma'xyk（exp）; 选择对应于载波移动性的多个I，i = 1,2的试验载波电导率 - 载流子迁移率谱si。 。 。 一世; 对于每个Bj，使用该试验载体电导率 - 载流子迁移率谱来计算电导率张量分量sigma xxj和sigma xyj，以及电导率张量分量sigma'xxj和sigma'xyj的斜率; 对于每个Bj，计算误差DELTA xxj = sigma xxj（exp） - sigma xxj，DELTA xyj = sigma xyj（exp） - sigma xyj，DELTA'xxj（exp） - sigma'xxj和DELTA'xyj = sigma'xyj exp）-σ'xyj，并从其计算总加权平方误差chi j2; 对于每个Bj和至少一个mu i的子集，计算对所述试验载波电导率 - 载波移动频谱δsij的最佳改变，并从其计算修改的总加权平方误差chi ij2; 对于每个Bj，确定最小载波移动点mu iminj，其对应的变化Δsij产生最低加权平方误差chi ij2; 对于每个Bj和至少一个μi的子集，将载波电导率 - 载流子迁移谱改变不超过δsij。

公开(公告)号：US5799026A

公开(公告)日：1998-08-25

申请号：US743433

申请日：1996-11-01

申请人： Jerry Meyer ,  Igor Vurgaftman ,  Ruan Q. Yang

发明人： Jerry Meyer ,  Igor Vurgaftman ,  Ruan Q. Yang

IPC分类号： H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3422 ,  H01S5/3401 ,  H01S5/3416 ,  H01S5/3419

摘要： A gain region for an interban quantum well laser incudes (a) an emitter ron of semiconductor material having at least one conduction subband and at least one valence subband, these subbands being spaced apart by an energy band-gap; (b) a collector region of semiconductor material having at least one conduction subband and at least one valence subband, these subbands spaced apart by an energy band-gap; (c) a type-I or type-II active region; and (d) a blocking quantum well region of semiconductor material between the active region and the collector region, for keeping electrons in the active region from tunnelling or scattering into the collector region, but allowing electrons in the highest valence subband in the active region to pass into the collector region. Another aspect of the invention is a cascade laser made from a stack of these gain regions, connected in series, optical cladding regions at opposing ends of the stack, and a voltage source for applying a bias voltage to the stack, and an optical cavity perpendicular to the stacking axis fabricated by cleaving or other means.

摘要翻译： 用于interban量子阱激光器的增益区域包括（a）具有至少一个导电子带和至少一个价带子带的半导体材料的发射极区域，这些子带间隔开能带隙; （b）半导体材料的集电极区域，具有至少一个导电子带和至少一个价带子带，这些子带间隔能量带隙; （c）I型或II型活性区; 以及（d）在有源区和集电极区之间的半导体材料的阻挡量子阱区，用于保持有源区中的电子不被隧穿或散射到集电极区，但允许有源区中最高价子带中的电子 进入收集区域。 本发明的另一方面是由堆叠的这些增益区域串联连接的级联激光器，堆叠的相对端的光学包层区域和用于向叠层施加偏置电压的电压源以及垂直于光学腔的光学腔 通过切割或其他方式制造的堆垛轴。

公开(公告)号：US20220375905A1

公开(公告)日：2022-11-24

申请号：US17740387

申请日：2022-05-10

申请人： Joseph D LaVeigne ,  Thomas E Danielson ,  Igor Vurgaftman ,  Chadwick L Canedy ,  Mijin Kim ,  Chul Soo Kim ,  William W Bewley ,  Charles D Merritt ,  Jerry R Meyer

发明人： Joseph D LaVeigne ,  Thomas E Danielson ,  Igor Vurgaftman ,  Chadwick L Canedy ,  Mijin Kim ,  Chul Soo Kim ,  William W Bewley ,  Charles D Merritt ,  Jerry R Meyer

IPC分类号： H01L25/075 ,  G03B21/20

摘要： Improved temperature independence in infrared light emitting diodes (IRLEDs). The active stage groups (ASGs) occur at or at an integer multiple of each antinode of the e-field of the desired center wavelength. The structure is designed to yield increased efficiency at low (cryogenic) temperatures with a wide range of operational temperature independence. The structure may be designed to provide a wide range of temperature independent operation near room temperature. The spacing (S) between the centers of the active stage groups may be varied to create a more broad and shallow peak of the temperature dependence of the antinode enhancement. The IRLED may be an interband cascade LED. A plurality (or array) of IRLEDs may be used in an infrared scene projector (IRSP)

公开(公告)号：US08385378B2

公开(公告)日：2013-02-26

申请号：US13608115

申请日：2012-09-10

申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul Soo Kim ,  Mijin Kim

发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul Soo Kim ,  Mijin Kim

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/3401 ,  H01S5/3422 ,  H01S5/34306

摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

摘要翻译： 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。