公开(公告)号：US20140014850A1

公开(公告)日：2014-01-16

申请号：US13937321

申请日：2013-07-09

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco WIELAND ,  Remco JAGER ,  Alexander Hendrik Vincent VAN VEEN ,  Stijn Willem Herman Karel STEENBRINK

IPC: H01J37/317

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/07 ,  H01J37/3174 ,  H01J2237/0262 ,  H01J2237/0435 ,  H01J2237/0437 ,  H01J2237/31774

Abstract: The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.