公开(公告)号：US20240243167A1

公开(公告)日：2024-07-18

申请号：US18411252

申请日：2024-01-12

申请人： Magnachip Semiconductor, Ltd.

发明人： Chanho PARK ,  Kihwan KIM ,  Jungyeon LEE ,  Suyoung MOON ,  Jiyong LIM

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/265 ,  H01L21/266

CPC分类号： H01L29/0634 ,  H01L29/402 ,  H01L29/66666 ,  H01L29/7827 ,  H01L21/26513 ,  H01L21/266

摘要： A super junction semiconductor device includes a substrate, an active cell disposed on the substrate, an edge termination region surrounding the active cell, a peripheral region formed between the active cell and the edge termination region, a plurality of first conductivity type pillars and second conductivity type pillars alternately provided at an edge of the active cell and the peripheral region and the edge termination region, and a charge sharing region connecting the second conductivity type pillars in the peripheral region with the second conductivity type pillars in the edge termination region above the peripheral region and the edge termination region.

公开(公告)号：US20240222465A1

公开(公告)日：2024-07-04

申请号：US18449373

申请日：2023-08-14

申请人： Magnachip Semiconductor, Ltd.

发明人： Jungyeon LEE ,  Seongchan JEON ,  Kihwan KIM ,  Kitae KANG ,  Jiyong LIM ,  Hohyun KIM ,  Chanho PARK

IPC分类号： H01L29/49 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L29/4941 ,  H01L21/02186 ,  H01L21/76864

摘要： A semiconductor device includes a semiconductor substrate; an oxide film formed on the semiconductor substrate; a gate poly formed on a portion of the oxide film; a spacer formed to surround the gate poly; a dielectric film formed on the spacer; a first barrier metal formed on side surfaces of the oxide film, the gate poly, the spacer, and the dielectric film which are stacked, a surface of the semiconductor substrate, and a top surface of the dielectric film; a second barrier metal formed on the first barrier metal; a metal plug formed in a cavity formed by the second barrier metal; a metal layer formed on the second barrier metal and the metal plug; and a passivation layer formed on the metal layer. A thickness of the first barrier metal formed on the surface of the dielectric film is in a range of from 15 nm to 25 nm.

公开(公告)号：US20240222162A1

公开(公告)日：2024-07-04

申请号：US18457240

申请日：2023-08-28

申请人： Magnachip Semiconductor, Ltd.

发明人： Jungyeon LEE ,  Seongchan JEON ,  Kihwan KIM ,  Kitae KANG ,  Jiyong LIM ,  Hohyun KIM ,  Chanho PARK

IPC分类号： H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC分类号： H01L21/67115 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/68764

摘要： A wafer annealing apparatus includes a gas supply unit located on one side of the wafer annealing apparatus and configured to supply high-temperature gases to transfer heat to wafers loaded inside the wafer annealing apparatus, a rotation driving unit comprising a rotation controller and configured to rotate a wafer support unit loaded with wafers, and a gas release unit located on the other side of the wafer annealing apparatus and configured to release the high-temperature gases fed to the wafer annealing apparatus. The rotation controller includes at least one processor configured to transmit a control signal to the rotation driving unit and control a rotation cycle and a rotation angle of the rotation driving unit.