SEMICONDUCTOR PACKAGE WITH INNER LEAD PATTERN GROUP AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR PACKAGE

    公开(公告)号:US20200286817A1

    公开(公告)日:2020-09-10

    申请号:US16503897

    申请日:2019-07-05

    摘要: A semiconductor package includes a first metal interconnection disposed in a semiconductor chip, a first bump group configured to be connected to the first metal interconnection, a first inner lead pattern group configured to be connected to the first bump group, a second metal interconnection disposed in the semiconductor chip, a second bump group configured to be connected to the second metal interconnection; and a second inner lead pattern group configured to be connected to the second bump group, wherein a density of the first metal interconnection is greater than a density of the second metal interconnection, such that a first pitch of the first lead pattern group is greater than a second pitch of the second lead pattern group.