-
公开(公告)号:US20220170172A1
公开(公告)日:2022-06-02
申请号:US17591071
申请日:2022-02-02
摘要: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
-
公开(公告)号:US20180347038A1
公开(公告)日:2018-12-06
申请号:US15607925
申请日:2017-05-30
发明人: Cherry S. Santos , Tyler Banker , John Swanson , Ernest Long , Fengting Xu
IPC分类号: C23C16/448 , C23C18/54 , C23C16/56 , H05K3/18 , H05K3/14
摘要: Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.
-
公开(公告)号:US20210381121A1
公开(公告)日:2021-12-09
申请号:US16893956
申请日:2020-06-05
摘要: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
-
公开(公告)号:US10774425B2
公开(公告)日:2020-09-15
申请号:US15607925
申请日:2017-05-30
发明人: Cherry S. Santos , Tyler Banker , John Swanson , Ernest Long , Fengting Xu
摘要: Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.
-
公开(公告)号:US20240271307A1
公开(公告)日:2024-08-15
申请号:US18568465
申请日:2022-05-25
发明人: Donald Desalvo , Ron Blake , Carmichael Gugliotti , William J. Decesare , Richard A. Bellemare , James Watkowski , Ernest Long
摘要: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and blind micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to. receive copper electroplating thereon: (2) forming at least one of one or more through-holes and/or one or more blind micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias using a complex waveform including pulse reverse plating. DC plating and/or synchronous pulse plating. The complex waveforms can be used for filling through-holes and blind microvias with copper without defects.
-
公开(公告)号:US11643742B2
公开(公告)日:2023-05-09
申请号:US17591071
申请日:2022-02-02
摘要: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
-
公开(公告)号:US11280014B2
公开(公告)日:2022-03-22
申请号:US16893956
申请日:2020-06-05
摘要: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
-
-
-
-
-
-