公开(公告)号：US20240331763A1

公开(公告)日：2024-10-03

申请号：US18591798

申请日：2024-02-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： TAKAMASA SUZUKI ,  NOBUO YAMAMOTO ,  IZUMI NAKAI

IPC: G11C11/4096 ,  G11C11/4074 ,  G11C11/4091

CPC classification number: G11C11/4096 ,  G11C11/4074 ,  G11C11/4091

Abstract: Apparatuses and methods for reducing standby current in memory array access circuits are disclosed. An example apparatus includes a activation voltage supply line and a sense amplifier coupled to the activation voltage supply line. The sense amplifier is configured to be activated by an activation voltage provided on the activation voltage supply line. A read-write circuit is coupled to a pair of local input/output lines and a pair of global input/output lines, and further coupled to the activation voltage supply line. The read-write circuit is configured to drive the pair global input/output lines based on voltages of the pair of local input/output lines when activated for a read operation and further configured to drive the pair of local input/output lines based on voltages of the pair of global input/output lines when activated for a write operation.