公开(公告)号：US08883644B2

公开(公告)日：2014-11-11

申请号：US14053346

申请日：2013-10-14

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Mirzafer K. Abatchev

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L27/105

CPC classification number: H01L23/5386 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1052 ,  H01L2924/0002 ,  Y10S438/942 ,  Y10S438/946 ,  Y10S438/947 ,  H01L2924/00

Abstract: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n−1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n−1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.

Abstract translation: 提供了用于将音调乘以大于2的因子的单间隔物处理。 在一个实施例中，n，其中n≥2，在衬底上形成层叠的心轴层，n层​​中的每一层包括基本上彼此平行的多个心轴。 层n上的心轴结束并平行于n-1层的心轴，层n的相邻心轴之间的距离大于n-1层相邻心轴之间的距离。 间隔件同时形成在心轴的侧壁上。 蚀刻掉心轴的裸露部分，并且由间隔物限定的线的图案被转移到基底。

公开(公告)号：US11335563B2

公开(公告)日：2022-05-17

申请号：US16807002

申请日：2020-03-02

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/308 ,  H01L23/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US09478497B2

公开(公告)日：2016-10-25

申请号：US14528999

申请日：2014-10-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： David H. Wells ,  Mirzafer K. Abatchev

IPC: H01L23/00 ,  H01L23/538 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/105

CPC classification number: H01L23/5386 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1052 ,  H01L2924/0002 ,  Y10S438/942 ,  Y10S438/946 ,  Y10S438/947 ,  H01L2924/00

Abstract: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n−1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n−1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.

Abstract translation: 提供了用于将音调乘以大于2的因子的单间隔物处理。 在一个实施例中，n，其中n≥2，在衬底上形成层叠的心轴层，n层​​中的每一层包括基本上彼此平行的多个心轴。 层n上的心轴结束并平行于n-1层的心轴，层n的相邻心轴之间的距离大于n-1层相邻心轴之间的距离。 间隔件同时形成在心轴的侧壁上。 蚀刻掉心轴的裸露部分，并且由间隔物限定的线的图案被转移到基底。

公开(公告)号：US20160203993A1

公开(公告)日：2016-07-14

申请号：US15076474

申请日：2016-03-21

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/3088 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US20150021744A1

公开(公告)日：2015-01-22

申请号：US14507507

申请日：2014-10-06

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greely ,  Brian J. Coppa

IPC: H01L21/033 ,  H01L23/00

CPC classification number: H01L21/30625 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/3088 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

Abstract translation: 图案化层的方法使用一系列自对准间隔物增加在初始图案化层上形成的特征的密度。 提供待蚀刻的层，然后在待蚀刻的层上形成例如使用光学光刻形成的初始牺牲图案形成层。 根据实施例，图案化层可以被修整，然后形成并蚀刻一系列间隔层。 间隔层的数量及其目标尺寸取决于所需的特征密度增加。 还描述了一种过程中半导体器件和电子系统。

公开(公告)号：US10607844B2

公开(公告)日：2020-03-31

申请号：US15993568

申请日：2018-05-30

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/308 ,  H01L23/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US10096483B2

公开(公告)日：2018-10-09

申请号：US15681066

申请日：2017-08-18

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/308 ,  H01L23/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US09761457B2

公开(公告)日：2017-09-12

申请号：US15076474

申请日：2016-03-21

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/308 ,  H01L23/00

CPC classification number: H01L21/30625 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/3088 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US20180286693A1

公开(公告)日：2018-10-04

申请号：US15993568

申请日：2018-05-30

Applicant: Micron Technology, Inc.

Inventor： Baosuo Zhou ,  Mirzafer K. Abatchev ,  Ardavan Niroomand ,  Paul A. Morgan ,  Shuang Meng ,  Joseph Neil Greeley ,  Brian J. Coppa

IPC: H01L21/306 ,  H01L21/308 ,  H01L23/00 ,  H01L21/033

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

公开(公告)号：US20150054168A1

公开(公告)日：2015-02-26

申请号：US14528999

申请日：2014-10-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： David H. Wells ,  Mirzafer K. Abatchev

IPC: H01L23/538 ,  H01L27/105

CPC classification number: H01L23/5386 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1052 ,  H01L2924/0002 ,  Y10S438/942 ,  Y10S438/946 ,  Y10S438/947 ,  H01L2924/00

Abstract: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n−1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n−1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.

Abstract translation: 提供了用于将音调乘以大于2的因子的单间隔物处理。 在一个实施例中，n，其中n≥2，在衬底上形成层叠的心轴层，n层​​中的每一层包括基本上彼此平行的多个心轴。 层n上的心轴结束并平行于n-1层的心轴，层n的相邻心轴之间的距离大于n-1层相邻心轴之间的距离。 间隔件同时形成在心轴的侧壁上。 蚀刻掉心轴的裸露部分，并且由间隔物限定的线的图案被转移到基底。