专利检索 ap:("MICROLINK DEVICES, INC.") AND inv:"Rekha Reddy" 第 1 页

1.

发明申请
Systems and Methods for Perforation and Ohmic Contact Formation For GaN Epitaxial Lift-Off Using An Etch Stop Layer 审中-公开

公开(公告)号：US20190088495A1

公开(公告)日：2019-03-21

申请号：US16044479

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey , Robert McCarthy , Rekha Reddy

IPC分类号： H01L21/306 , H01L21/67 , H01L29/20 , H01L21/02

CPC分类号： H01L21/30612 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02664 , H01L21/30635 , H01L21/67075 , H01L21/67086 , H01L21/78 , H01L21/7813 , H01L29/2003 , H01L31/02363 , H01L33/0075 , H01L33/22

摘要： Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

2.

发明授权
Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer 有权

公开(公告)号：US10522363B2

公开(公告)日：2019-12-31

申请号：US16044479

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey , Robert McCarthy , Rekha Reddy

IPC分类号： H01L21/306 , H01L21/78 , H01L21/3063 , H01L33/00 , H01L21/02 , H01L31/0236 , H01L21/67 , H01L29/20 , H01L33/22

摘要： Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

3.

发明申请
BACK-CONTACT THIN FILM SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR THEIR PRODUCTION 审中-公开

公开(公告)号：US20180294372A1

公开(公告)日：2018-10-11

申请号：US15947683

申请日：2018-04-06

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey , Rekha Reddy , Christopher Stender

IPC分类号： H01L31/0463 , H01L31/05 , H01L31/048

摘要： Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.