Invention Grant
- Patent Title: Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer
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Application No.: US16044479Application Date: 2018-07-24
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Publication No.: US10522363B2Publication Date: 2019-12-31
- Inventor: Christopher Youtsey , Robert McCarthy , Rekha Reddy
- Applicant: MICROLINK DEVICES, INC.
- Applicant Address: US IL Niles
- Assignee: MICROLINK DEVICES, INC.
- Current Assignee: MICROLINK DEVICES, INC.
- Current Assignee Address: US IL Niles
- Agency: McCarter & English, LLP
- Agent David R. Burns
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/78 ; H01L21/3063 ; H01L33/00 ; H01L21/02 ; H01L31/0236 ; H01L21/67 ; H01L29/20 ; H01L33/22
Abstract:
Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.
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