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公开(公告)号:US12237401B2
公开(公告)日:2025-02-25
申请号:US17821195
申请日:2022-08-22
Applicant: MEDIATEK Inc.
Inventor: Cheng-Tien Wan , Yao-Tsung Huang , Yun-San Huang , Ming-Cheng Lee , Wei-Che Huang
IPC: H01L29/66 , H01L21/8234 , H01L21/8238 , H01L21/84 , H01L27/088 , H01L27/12 , H01L29/417 , H01L29/78
Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.
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公开(公告)号:US11450756B2
公开(公告)日:2022-09-20
申请号:US17001784
申请日:2020-08-25
Applicant: MEDIATEK Inc.
Inventor: Cheng-Tien Wan , Yao-Tsung Huang , Yun-San Huang , Ming-Cheng Lee , Wei-Che Huang
IPC: H01L21/8238 , H01L29/66 , H01L29/78 , H01L21/84 , H01L27/12 , H01L29/417 , H01L27/088 , H01L21/8234
Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.
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公开(公告)号:US10790380B2
公开(公告)日:2020-09-29
申请号:US16121730
申请日:2018-09-05
Applicant: MEDIATEK Inc.
Inventor: Cheng-Tien Wan , Yao-Tsung Huang , Yun-San Huang , Ming-Cheng Lee , Wei-Che Huang
IPC: H01L29/66 , H01L29/78 , H01L21/84 , H01L27/12 , H01L21/8238 , H01L29/417 , H01L27/088 , H01L21/8234
Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.
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