公开(公告)号：US20180007650A1

公开(公告)日：2018-01-04

申请号：US15198283

申请日：2016-06-30

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Damian McCann

IPC: H04W56/00 ,  H03F1/02 ,  H03F3/193

CPC classification number: H04W56/0035 ,  H03F1/0233 ,  H03F1/3205 ,  H03F1/3247 ,  H03F3/189 ,  H03F3/193 ,  H03F2200/102 ,  H03F2200/165 ,  H03F2200/339 ,  H03F2200/451

Abstract: Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

公开(公告)号：US20200244258A1

公开(公告)日：2020-07-30

申请号：US16847896

申请日：2020-04-14

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Cristiano Bazzani ,  Damian McCann

IPC: H03K17/16 ,  H01L29/20 ,  H03F3/217 ,  H03K5/24 ,  H03F1/22 ,  H01L29/778 ,  H03F3/72 ,  H03K17/082 ,  G05F1/573 ,  H03F1/52 ,  H02H3/08 ,  H02H9/02

Abstract: Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

公开(公告)号：US11728805B2

公开(公告)日：2023-08-15

申请号：US16847896

申请日：2020-04-14

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Cristiano Bazzani ,  Damian McCann

IPC: H03K17/16 ,  H01L29/20 ,  H01L29/778 ,  H03K5/24 ,  H03F1/22 ,  H03F3/217 ,  H03K17/082 ,  H03F3/72 ,  G05F1/573 ,  H02H3/08 ,  H03F1/52 ,  H02H9/02

CPC classification number: H03K17/165 ,  H01L29/2003 ,  H01L29/7787 ,  H03F1/223 ,  H03F3/2171 ,  H03F3/72 ,  H03K5/2472 ,  H03K17/0828 ,  G05F1/573 ,  H02H3/08 ,  H02H9/02 ,  H03F1/52 ,  H03F2200/462 ,  H03F2200/78

Abstract: Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

公开(公告)号：US09974038B2

公开(公告)日：2018-05-15

申请号：US15198283

申请日：2016-06-30

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Damian McCann

IPC: H04W56/00 ,  H03F1/02 ,  H03F3/193

CPC classification number: H04W56/0035 ,  H03F1/0233 ,  H03F1/3205 ,  H03F1/3247 ,  H03F3/189 ,  H03F3/193 ,  H03F2200/102 ,  H03F2200/165 ,  H03F2200/339 ,  H03F2200/451

Abstract: Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

公开(公告)号：US20170359059A1

公开(公告)日：2017-12-14

申请号：US15181841

申请日：2016-06-14

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Cristiano Bazzani ,  Damian McCann

IPC: H03K17/16 ,  H01L29/20 ,  H03K5/24 ,  H01L29/778

CPC classification number: H03K17/165 ,  G05F1/573 ,  H01L29/2003 ,  H01L29/7787 ,  H02H3/08 ,  H02H9/02 ,  H03F1/223 ,  H03F1/52 ,  H03F3/2171 ,  H03F3/72 ,  H03F2200/462 ,  H03F2200/78 ,  H03K5/2472 ,  H03K17/0828

Abstract: Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

公开(公告)号：US20170359033A1

公开(公告)日：2017-12-14

申请号：US15181866

申请日：2016-06-14

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Cristiano Bazzani ,  Damian McCann

IPC: H03F1/52 ,  H03F3/21 ,  H03K19/0185 ,  H01L29/20

CPC classification number: H03F1/523 ,  H01L29/2003 ,  H03F1/22 ,  H03F3/19 ,  H03F3/21 ,  H03F3/211 ,  H03F3/3022 ,  H03F2200/18 ,  H03F2200/211 ,  H03F2200/451 ,  H03F2200/462 ,  H03F2200/78 ,  H03K19/018507

Abstract: Circuits for protecting devices, such as gallium nitride (VcclGaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.