FAST AXIS WAVELENGTH BEAM COMBINING FOR BROAD AREA LASER DIODES

    公开(公告)号:US20230411933A1

    公开(公告)日:2023-12-21

    申请号:US18329448

    申请日:2023-06-05

    Abstract: An optical module includes a stepped structure that includes a plurality of steps, a plurality of laser diodes (e.g., broad area laser diodes (BALs)), a transform lens; a grating; and an output coupler (OC). At least one laser diode, of the plurality of laser diodes, is disposed on each step of the plurality of steps of the stepped structure. The transform lens is configured to receive a plurality of laser beams emitted by the plurality of laser diodes and to direct the plurality of laser beams to the grating. The grating is configured to receive and to combine the plurality of laser beams into a single laser beam, and to direct the single laser beam to the OC. The OC is configured to receive the single laser beam from the grating and to direct a portion of the of the single laser beam out of the optical module.

    MULTI-WAVELENGTH LASER DIODE
    4.
    发明申请

    公开(公告)号:US20220344910A1

    公开(公告)日:2022-10-27

    申请号:US17305484

    申请日:2021-07-08

    Abstract: In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

    KINK-FREE HIGH FILL-FACTOR BROAD AREA SEMICONDUCTOR LASER ON AN OFF-CUT SUBSTRATE

    公开(公告)号:US20240413607A1

    公开(公告)日:2024-12-12

    申请号:US18671459

    申请日:2024-05-22

    Abstract: A semiconductor laser may include an off-cut substrate having a cut angle of at least approximately 6 degrees (°). The semiconductor laser may include an epitaxial structure over the off-cut substrate. A first sidewall formed by the off-cut substrate and the epitaxial structure may be parallel to a second sidewall formed by the off-cut substrate and the epitaxial structure. A front facet formed by the off-cut substrate and the epitaxial structure may be parallel to a back facet formed by the off-cut substrate and the epitaxial structure. The cut angle of the off-cut substrate may cause the first sidewall to be non-perpendicular to epitaxial layers of the epitaxial structure. The cut angle of the off-cut substrate may cause the second sidewall to be non-perpendicular to the epitaxial layers of the epitaxial structure.

    OPTICAL DEVICE THAT INCLUDES AN EPITAXIAL LAYER STRUCTURE WITH TRENCHES AND GROOVES

    公开(公告)号:US20240106200A1

    公开(公告)日:2024-03-28

    申请号:US18060203

    申请日:2022-11-30

    CPC classification number: H01S5/2036 H01S5/22

    Abstract: An optical device includes a substrate and an epitaxial layer structure disposed over the substrate. The epitaxial layer structure includes a first clad layer disposed over the substrate, a first waveguide layer disposed over the first clad layer, an active layer disposed over the first waveguide layer, a second waveguide layer disposed over the active layer, a second clad layer disposed over the second waveguide layer, and a cap layer disposed over the second clad layer. The optical device further includes a pair of trenches formed in an inner region of a surface of the epitaxial layer structure, and a pair of grooves, each formed in an outer region of the surface of the epitaxial layer structure. Each trench does not extend into the active layer, and each groove extends into the active layer. A light-current curve associated with the laser optical device is kink-free and/or smooth.

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