公开(公告)号：US20250044602A1

公开(公告)日：2025-02-06

申请号：US18535488

申请日：2023-12-11

Applicant: Lumentum Operations LLC

Inventor： Li FAN

IPC: G02B27/14

Abstract: In some implementations, an optical component includes a substrate component; and a plurality of mirrors disposed on a top surface of the substrate component in a single, horizontal plane, wherein each mirror, of the plurality of mirrors, is angled, non-orthogonally, with respect to the single, horizontal plane, such that each optical path associated with each mirror is disposed in a corresponding tilted plane that is non-parallel with the single, horizontal plane.

公开(公告)号：US20200067280A1

公开(公告)日：2020-02-27

申请号：US16423820

申请日：2019-05-28

Applicant: Lumentum Operations LLC

Inventor： Li FAN

IPC: H01S5/34

Abstract: A semiconductor layer structure may include a substrate, a buffer layer formed on the substrate, and a set of epitaxial layers formed on the buffer layer. The buffer layer may have a thickness that is greater than 2 micrometers (μm). The set of epitaxial layers may include a quantum well layer. A quantum well intermixing region may be formed in association with the quantum well layer and a material diffused from a region of a surface of the semiconductor layer structure.

公开(公告)号：US20240413607A1

公开(公告)日：2024-12-12

申请号：US18671459

申请日：2024-05-22

Applicant: Lumentum Operations LLC

Inventor： Li FAN ,  Victor ROSSIN

IPC: H01S5/10 ,  H01S5/20 ,  H01S5/24

Abstract: A semiconductor laser may include an off-cut substrate having a cut angle of at least approximately 6 degrees (°). The semiconductor laser may include an epitaxial structure over the off-cut substrate. A first sidewall formed by the off-cut substrate and the epitaxial structure may be parallel to a second sidewall formed by the off-cut substrate and the epitaxial structure. A front facet formed by the off-cut substrate and the epitaxial structure may be parallel to a back facet formed by the off-cut substrate and the epitaxial structure. The cut angle of the off-cut substrate may cause the first sidewall to be non-perpendicular to epitaxial layers of the epitaxial structure. The cut angle of the off-cut substrate may cause the second sidewall to be non-perpendicular to the epitaxial layers of the epitaxial structure.

公开(公告)号：US20240106200A1

公开(公告)日：2024-03-28

申请号：US18060203

申请日：2022-11-30

Applicant: Lumentum Operations LLC

Inventor： Li FAN ,  Victor ROSSIN

IPC: H01S5/20 ,  H01S5/22

CPC classification number: H01S5/2036 ,  H01S5/22

Abstract: An optical device includes a substrate and an epitaxial layer structure disposed over the substrate. The epitaxial layer structure includes a first clad layer disposed over the substrate, a first waveguide layer disposed over the first clad layer, an active layer disposed over the first waveguide layer, a second waveguide layer disposed over the active layer, a second clad layer disposed over the second waveguide layer, and a cap layer disposed over the second clad layer. The optical device further includes a pair of trenches formed in an inner region of a surface of the epitaxial layer structure, and a pair of grooves, each formed in an outer region of the surface of the epitaxial layer structure. Each trench does not extend into the active layer, and each groove extends into the active layer. A light-current curve associated with the laser optical device is kink-free and/or smooth.