公开(公告)号：US20220254685A1

公开(公告)日：2022-08-11

申请号：US17595590

申请日：2020-05-18

Applicant: Lam Research Corporation

Inventor： Sema ERMEZ ,  Ruopeng DENG ,  Yutaka NISHIOKA ,  Xiaolan BA ,  Sanjay GOPINATH ,  Michal DANEK

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/455 ,  C23C16/08

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

公开(公告)号：US20240282580A1

公开(公告)日：2024-08-22

申请号：US18655124

申请日：2024-05-03

Applicant: Lam Research Corporation

Inventor： Xiaolan BA ,  Ruopeng DENG ,  Juwen GAO ,  Sanjay GOPINATH ,  Lawrence SCHLOSS

IPC: H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28568 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H10B41/27 ,  H10B43/27

Abstract: Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US20240006180A1

公开(公告)日：2024-01-04

申请号：US18253196

申请日：2021-11-16

Applicant: Lam Research Corporation

Inventor： Yu PAN ,  Yao-Tsung HSIEH ,  Xiaolan BA ,  Juwen GAO

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/768 ,  C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/28562 ,  H01L21/28079 ,  H01L21/76879 ,  C23C16/14 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45525

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal layer of boron (B) on a substrate. The substrate generally includes a feature to be filled with tungsten with the boron layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a continuous flow of hydrogen and pulses of fluorine-containing tungsten precursor in a pulsed CVD process. The conformal boron layer is converted to a conformal tungsten layer.

公开(公告)号：US20220364232A1

公开(公告)日：2022-11-17

申请号：US17633562

申请日：2020-08-10

Applicant: Lam Research Corporation

Inventor： Pragna NANNAPANENI ,  Novy TJOKRO ,  Sema ERMEZ ,  Ruopeng DENG ,  Tianhua YU ,  Xiaolan BA ,  Sanjay GOPINATH

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.