公开(公告)号：US20240282580A1

公开(公告)日：2024-08-22

申请号：US18655124

申请日：2024-05-03

Applicant: Lam Research Corporation

Inventor： Xiaolan BA ,  Ruopeng DENG ,  Juwen GAO ,  Sanjay GOPINATH ,  Lawrence SCHLOSS

IPC: H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28568 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H10B41/27 ,  H10B43/27

Abstract: Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US20250022751A1

公开(公告)日：2025-01-16

申请号：US18714550

申请日：2022-11-30

Applicant: Lam Research Corporation

Inventor： Sang-Hyeob LEE ,  Anand CHANDRASHEKAR ,  Kaihan Abidi ASHTIANI ,  Patrick August VAN CLEEMPUT ,  Joshua COLLINS ,  Lawrence SCHLOSS ,  Sanjay GOPINATH ,  Juwen GAO

IPC: H01L21/768

Abstract: Methods of filling a features of partially fabricated semiconductor substrates with metal include depositing a gradient metal nitride layer in the feature. The gradient metal nitride layer decreases in thickness and/or nitrogen concentration with feature depth. At the top of the feature, the gradient metal nitride layer can serve as an adhesion layer during a subsequent planarization. Because the gradient metal nitride layer deceases in thickness and/or nitrogen concentration further into the feature, it occupies less volume in the mid-section and bottom section of the feature. This improves resistivity in the feature. The feature is filled with metal.

公开(公告)号：US20220375792A1

公开(公告)日：2022-11-24

申请号：US17763529

申请日：2020-10-14

Applicant: Lam Research Corporation

Inventor： Lawrence SCHLOSS ,  Shruti Vivek THOMBARE ,  Zhongbo YAN ,  Patrick A. VAN CLEEMPUT ,  Joshua COLLINS

IPC: H01L21/768 ,  H01L27/115 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  C23C16/56

Abstract: Embodiments of methods of filling features with molybdenum (Mo) include depositing a first layer of Mo in a feature including an opening and an interior and non-conformally treating the first layer such that regions near the opening preferentially treated over regions in the interior. In some embodiments, a second Mo layer is deposited on the treated first layer. Embodiments of methods of filling features with Mo include controlling Mo precursor flux to transition between conformal and non-conformal fill.