公开(公告)号：US20230290639A1

公开(公告)日：2023-09-14

申请号：US18003137

申请日：2020-07-29

Applicant: Lam Research Corporation

Inventor： Lawrence Schloss ,  Anand Chandrashekar ,  Juwen Gao ,  Stephanie Noelle Sandra Sawant-Goubert ,  Yu Pan

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/14 ,  C23C16/56 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04

CPC classification number: H01L21/28088 ,  H01L29/4011 ,  C23C16/34 ,  C23C16/14 ,  C23C16/56 ,  C23C16/4583 ,  C23C16/45565 ,  C23C16/45527 ,  C23C16/045

Abstract: Methods and apparatuses for forming low resistivity tungsten using tungsten nitride barrier layers are provided herein. Methods involve depositing extremely thin tungsten nitride barrier layers prior to depositing tungsten nucleation and bulk tungsten layers. Methods are applicable for fabricating tungsten word lines in 3D NAND fabrication as well as for fabricating tungsten-containing components of DRAM and logic fabrication. Apparatus included processing stations with multiple charge volumes to pressurize gases in close vicinity to a showerhead of a processing chamber for processing semiconductor substrates.