公开(公告)号：US20230304156A1

公开(公告)日：2023-09-28

申请号：US18327558

申请日：2023-06-01

Applicant: Lam Research Corporation

Inventor： Geoffrey HOHN ,  Huatan QIU ,  Rachel E. BATZER ,  Guangbi YUAN ,  Zhe GUI

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/505

CPC classification number: C23C16/4585 ,  H01L21/68785 ,  H01L21/68742 ,  H01L21/68757 ,  C23C16/4586 ,  C23C16/4581 ,  C23C16/505

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

公开(公告)号：US20240218509A1

公开(公告)日：2024-07-04

申请号：US18427691

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US20220282380A1

公开(公告)日：2022-09-08

申请号：US17630218

申请日：2020-07-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Prasanna KULKARNI ,  Rachel E. BATZER ,  Ted TAN ,  Vivekanandan KRISHNASWAMY ,  Boonyarit WOONPRASERT ,  Shawn FIEDLER

IPC: C23C16/52 ,  C23C16/458 ,  C23C16/509 ,  C23C16/455 ,  H01L21/68 ,  G06T7/00

Abstract: A method comprises arranging an apparatus on a top surface of a pedestal in a processing chamber. The apparatus comprises an annular member, N supporting members, and N pins, where N is an integer greater than two. The N supporting members support the annular member in a plane parallel to and above the top surface of the pedestal. The N pins are arranged perpendicularly to the plane along a circumference around the annular member. Each of the N pins includes threads engageable with respective threaded slots in the apparatus. Each of the N pins includes a conical end pointing towards the top surface of the pedestal and engageable with a periphery of the top surface of the pedestal. The method further comprises aligning a center of the annular member to a center of the pedestal by adjusting one or more of the N pins.

公开(公告)号：US20230374661A1

公开(公告)日：2023-11-23

申请号：US18029963

申请日：2021-09-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Gopinath BHIMARASETTI ,  Aaron Blake MILLER ,  Rachel E. BATZER

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45565 ,  C23C16/4412

Abstract: A showerhead for a processing chamber comprises a body having upper, lower, and side surfaces defining a plenum; and a plurality of through holes provided on the lower surface of the body. The plurality of through holes are in fluid communication with the plenum and the processing chamber. The showerhead comprises an inlet provided on one of the upper and side surfaces of the body and a first passage provided in the body. The first passage connects the inlet to the plenum. The showerhead comprises an outlet provided on one of the upper and side surfaces of the body and a second passage provided in the body. The second passage connects the outlet to the plenum.

公开(公告)号：US20230332291A1

公开(公告)日：2023-10-19

申请号：US18245623

申请日：2021-09-21

Applicant: Lam Research Corporation

Inventor： Bhadri VARADARAJAN ,  Aaron DURBIN ,  Huatan QIU ,  Bo GONG ,  Rachel E. BATZER ,  Gopinath BHIMARASETTI ,  Aaron Blake MILLER ,  Patrick G. BREILING ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01J37/32357

Abstract: A showerhead comprises first, second, and third components. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The disc-shaped portion includes first and second sets of holes having first and second diameters, respectively, that extend from a center of the disc-shaped portion to an inner diameter of the cylindrical portion. The second component is disc-shaped and is attached to the disc-shaped portion of the first component, defines a plenum that is in fluid communication with the second set of holes, and includes a pair of arc-shaped grooves along a periphery and on opposite ends of the top surface and a plurality of grooves extending between the pair of arc-shaped grooves. The third component is disc-shaped, is attached to the second component, and includes a gas inlet connected to the plenum, and fluid inlet and outlet connected to the arc-shaped grooves.

公开(公告)号：US20250003074A1

公开(公告)日：2025-01-02

申请号：US18884565

申请日：2024-09-13

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Zhe GUI ,  Galbokka Hewage Layan SAVITHRA

IPC: C23C16/455 ,  H01J37/32

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

公开(公告)号：US20230175134A1

公开(公告)日：2023-06-08

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Huatan QIU ,  Bhadri N. VARADARAJAN ,  Patrick Girard BREILING ,  Bo GONG ,  Will SCHLOSSER ,  Zhe GUI ,  Taide TAN ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32422 ,  C23C16/505 ,  H01J37/32522 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20220145459A1

公开(公告)日：2022-05-12

申请号：US17649020

申请日：2022-01-26

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/505

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.