公开(公告)号：US20230175134A1

公开(公告)日：2023-06-08

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Huatan QIU ,  Bhadri N. VARADARAJAN ,  Patrick Girard BREILING ,  Bo GONG ,  Will SCHLOSSER ,  Zhe GUI ,  Taide TAN ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32422 ,  C23C16/505 ,  H01J37/32522 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.