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公开(公告)号：US20220108912A1
公开(公告)日：2022-04-07
申请号：US17644757
申请日：2021-12-16
IPC分类号： H01L21/687
摘要： Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.
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公开(公告)号：US20170133260A1
公开(公告)日：2017-05-11
申请号：US14977554
申请日：2015-12-21
IPC分类号： H01L21/687
CPC分类号： H01L21/68742 , H01L21/68764
摘要： A substrate lift pin assembly includes a tubular support member connected to a bottom of a pedestal beneath a lift pin through-hole. The tubular support member has an interior cavity and an end closure with a cartridge through-hole extending through the end closure. A cartridge member includes a lift pin holder portion and a plunger portion. The lift pin holder portion is located inside of the interior cavity of the tubular support member. The plunger portion extends through the cartridge through-hole of the end closure of the tubular support member. A lift pin extends through the lift pin through-hole and connects to the lift pin holder portion of the cartridge member. A handle member connects to the plunger portion of the cartridge member at a location near a distal end of the plunger portion relative to the tubular support member. The handle member is configured to engage a lifting mechanism.
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公开(公告)号：US11619925B2
公开(公告)日：2023-04-04
申请号：US17553686
申请日：2021-12-16
IPC分类号： H01J37/32 , G05B19/4097
摘要： Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.
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公开(公告)号：US11512393B2
公开(公告)日：2022-11-29
申请号：US16205028
申请日：2018-11-29
IPC分类号： C23C16/458 , C23C16/455
摘要： A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.
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公开(公告)号：US11830759B2
公开(公告)日：2023-11-28
申请号：US17644757
申请日：2021-12-16
IPC分类号： H01L21/687 , H01J37/32
CPC分类号： H01L21/68721 , H01J37/32642 , H01J37/32715 , H01L21/68735 , H01L21/68785 , H01J2237/332
摘要： Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.
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公开(公告)号：US20220115261A1
公开(公告)日：2022-04-14
申请号：US17644754
申请日：2021-12-16
IPC分类号： H01L21/687 , H01J37/32
摘要： Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.
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公开(公告)号：US20200173018A1
公开(公告)日：2020-06-04
申请号：US16205028
申请日：2018-11-29
IPC分类号： C23C16/458 , C23C16/455
摘要： A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.
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公开(公告)号：US11837495B2
公开(公告)日：2023-12-05
申请号：US17644754
申请日：2021-12-16
IPC分类号： H01L21/687 , H01J37/32
CPC分类号： H01L21/68721 , H01J37/32642 , H01J37/32715 , H01L21/68735 , H01L21/68785 , H01J2237/332
摘要： Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.
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公开(公告)号：US20230088715A1
公开(公告)日：2023-03-23
申请号：US18071192
申请日：2022-11-29
IPC分类号： C23C16/458 , C23C16/455
摘要： A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.
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公开(公告)号：US20220107619A1
公开(公告)日：2022-04-07
申请号：US17553686
申请日：2021-12-16
IPC分类号： G05B19/4097
摘要： Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.
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