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公开(公告)号：US11915923B2
公开(公告)日：2024-02-27
申请号：US17090821
申请日：2020-11-05
CPC分类号： H01L21/02041 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder. Producing the organotin compound enables suction of Sn out of the processing chamber to prevent Sn powder from being deposited on the surfaces of the processing chamber during said etching SnO2.
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公开(公告)号：US20200051807A1
公开(公告)日：2020-02-13
申请号：US16100144
申请日：2018-08-09
摘要： A method for cleaning SnO2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of 1%-60% into a plasma processing system. The SnO2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of 1%-60% reduces a rate of SnH4 gas decomposition into Sn powder.
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公开(公告)号：US11717866B2
公开(公告)日：2023-08-08
申请号：US17738825
申请日：2022-05-06
CPC分类号： B08B9/08 , B08B3/08 , B08B5/00 , C23C16/4405 , B08B2209/08
摘要： Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.
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公开(公告)号：US20210308726A1
公开(公告)日：2021-10-07
申请号：US17278191
申请日：2019-09-20
摘要： Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.
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公开(公告)号：US20220258216A1
公开(公告)日：2022-08-18
申请号：US17738825
申请日：2022-05-06
摘要： Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.
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公开(公告)号：US11031244B2
公开(公告)日：2021-06-08
申请号：US16103849
申请日：2018-08-14
IPC分类号： H01L21/02 , H01L21/027 , G03F7/20 , H01L21/033 , G03F7/16
摘要： A method for improving EUV lithographic patterning of SnO2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO2 layer. The modification increases the hydrophobicity of the SnO2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO2 layer via spin coating. The modification of the surface of the SnO2 layer enhances adhesion of contact between the photoresist and the SnO2 layer during and after spin coating.
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公开(公告)号：US20230245896A1
公开(公告)日：2023-08-03
申请号：US18003098
申请日：2021-07-21
发明人： Awnish Gupta , Bart J. Van Schravendijk , Frank Loren Pasquale , Adrien LaVoie , Jason Alexander Varnell , Praneeth Ramasagaram , Joseph R. Abel , Jennifer Leigh Petraglia , Dustin Zachary Austin
IPC分类号： H01L21/311 , C23C16/56 , C23C16/04 , C23C16/06 , C23C16/34 , C23C16/40 , H01J37/32 , H01L21/02
CPC分类号： H01L21/31116 , C23C16/56 , C23C16/045 , C23C16/06 , C23C16/345 , C23C16/401 , H01J37/32449 , H01J37/32724 , H01J37/32816 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/76831
摘要： Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.
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公开(公告)号：US20230038880A1
公开(公告)日：2023-02-09
申请号：US17759096
申请日：2020-12-17
摘要： Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.
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公开(公告)号：US20210057208A1
公开(公告)日：2021-02-25
申请号：US17090821
申请日：2020-11-05
摘要： A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder. Producing the organotin compound enables suction of Sn out of the processing chamber to prevent Sn powder from being deposited on the surfaces of the processing chamber during said etching SnO2.
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公开(公告)号：US20200058492A1
公开(公告)日：2020-02-20
申请号：US16103849
申请日：2018-08-14
IPC分类号： H01L21/027 , H01L21/02 , H01L21/033 , G03F7/16 , G03F7/20
摘要： A method for improving EUV lithographic patterning of SnO2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO2 layer. The modification increases the hydrophobicity of the SnO2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO2 layer via spin coating. The modification of the surface of the SnO2 layer enhances adhesion of contact between the photoresist and the SnO2 layer during and after spin coating.
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