Abstract:
A multi-spectral photodetector for detecting two or more different bands of infrared radiation is described. The photodetector includes a diffractive resonant optical cavity that resonates at the two or more infrared radiation bands of interest. By detecting infrared radiation at two or more discrete applied biases and by generating a spectral response curve for the photodetector at each of these biases, the response to each of the individual bands of infrared radiation can be calculated. The response to each band of infrared radiation can be found by deconvolving the response at each bias. The photodetector finds many uses including military and medical imaging applications and can cover a broad portion of the infrared spectrum.
Abstract:
A diffraction grating coupled infrared photodetector for providing high performance detection of infrared radiation is described. The photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a range of infrared radiation wavelengths. By placing a limited number of p/n junctions throughout the photodetector, the photodetector thermal noise is reduced due to the reduction in junction area. By retaining signal response and reducing the noise, the sensitivity increases at a given operating temperature when compared to traditional photovoltaic and photoconductive infrared photodetectors up to the background limit. The photodetector device design can be used with a number of semiconductor material systems, can form one- and two-dimensional focal plane arrays, and can readily be tuned for operation in the long wavelength infrared and the very long wavelength infrared where sensitivity and noise improvements are most significant.
Abstract:
An array of diffraction grating coupled infrared photodetectors is coupled to corresponding high-speed amplifiers for creating a multiple channel high speed receiver for an optical communication system. Each photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a narrow range of wavelengths. By creating different resonant optical cavities, the receiver detects each optical channel individually, thereby simplifying receiver design. The receiver finds ready application in systems based upon high power CO2 lasers and semiconductor lasers such as quantum cascade lasers allowing extremely long line of sight communication, such as between satellites. Other applications include ship to ship or ground to missile communications. These applications will benefit from increased jamming resistance and security.
Abstract:
A multi-spectral super-pixel photodetector for detecting four or more different bands of infrared radiation is described. The super-pixel photodetector includes two or more sub-pixel photodetectors, each of which includes a diffractive resonant optical cavity that resonates at two or more infrared radiation bands of interest. By detecting infrared radiation at two or more different applied biases and by generating a spectral response curve for each of the sub-pixel photodetectors at each of these biases, the response to each of the individual bands of infrared radiation can be calculated. The response to each band of infrared radiation can be found by deconvolving the response at each bias. The super-pixel photodetector finds use in military and medical imaging applications and can cover a broad portion of the infrared spectrum.
Abstract:
The described embodiments of the present invention include a method for forming a radiation detector, including the steps of: forming a radiation absorption layer on a substrate; forming a wider bandgap layer on the radiation absorption layer; forming a passivation layer on the wider bandgap layer; forming a doping layer on the passivation layer; patterning the doping layer; driving dopant from the patterned doping layer into the junction layer and the radiation absorption layer to form a doped region; patterning the passivation layer to expose the doped region; and forming an electrical contact to the doped region. Another described embodiment of the present invention is a radiation detector. This embodiment includes a radiation absorption layer formed on a substrate and a wider bandgap layer formed on the radiation absorption layer. This embodiment further includes a passivation layer formed on the junction layer; a patterned doping layer formed on the passivation layer and a doped region formed by driving dopant from the patterned doping layer into the junction layer and the radiation absorption layer and an electrical contact formed through a via in the passivation layer to provide electrical contact with the doped region.