公开(公告)号：US20180248059A1

公开(公告)日：2018-08-30

申请号：US15904019

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Gunho KIM ,  Hyun LEE ,  Wonseok CHOI ,  Younho HEO

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0735

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/186 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.

公开(公告)号：US20220077122A1

公开(公告)日：2022-03-10

申请号：US17530155

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Jinhyung LEE ,  Jungsub KIM ,  Seongmin MOON ,  Younho HEO

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: Discussed is an assembly substrate used for a display device manufacturing method of mounting semiconductor light-emitting diodes on the assembly substrate at preset positions using electric field and magnetic field. The assembly substrate includes a base portion, a plurality of assembly electrodes on the base portion, a dielectric layer on the base portion to cover the assembly electrodes, a barrier wall on the base portion, and a metal shielding layer on the base portion, wherein the metal shielding layer overlaps the barrier wall.

公开(公告)号：US20180301580A1

公开(公告)日：2018-10-18

申请号：US15949628

申请日：2018-04-10

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Hyun LEE ,  Wonseok CHOI ,  Younho HEO

IPC: H01L31/0725 ,  H01L31/0735

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a first base layer formed of a gallium indium phosphide (GaInP)-based compound semiconductor; a first emitter layer forming a p-n junction with the first base layer; a first window layer positioned on a front surface of the first base layer or the first emitter layer; and a first back surface field layer positioned on a back surface of the first emitter layer or the first base layer, wherein the first window layer of the first cell is formed of a four-component III-V compound semiconductor.

公开(公告)号：US20230299055A1

公开(公告)日：2023-09-21

申请号：US18020608

申请日：2020-08-10

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Jinhyung LEE ,  Younho HEO ,  Yongil SHIN ,  Kisu KIM

IPC: H01L25/075 ,  H01L33/36 ,  H01L21/304 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/36 ,  H01L21/3043 ,  H01L33/08 ,  H01L33/0095

Abstract: A method for manufacturing a substrate for manufacturing a display device, according to the present invention, comprises the steps of: (a) forming, at predetermined intervals, assembly electrodes extending in one direction on a base part, and forming a dielectric layer so as to cover the assembly electrodes; (b) forming, on the dielectric layer, metal patterns so as to overlap the assembly electrodes; (c) forming partition parts on the dielectric layer so as to cover the metal patterns, and then forming assembly holes so as to overlap the metal patterns; and (d) removing the metal patterns exposed through the assembly holes, wherein, in step (d), a groove part is formed on the surface of each partition part, which forms the inner surface of each assembly hole, as the metal patterns are removed.

公开(公告)号：US20230079059A1

公开(公告)日：2023-03-16

申请号：US17798664

申请日：2020-02-13

Applicant: LG ELECTRONICS INC.

Inventor： Younho HEO ,  Jinhyung LEE ,  Seongmin MOON ,  Changseo PARK

IPC: H01L21/673 ,  H01L33/00

Abstract: A substrate for manufacturing a display device according to the present invention includes a base part; assembly electrodes extending in one direction and disposed on the base part at predetermined intervals; an etch stop layer formed on at least a portion of the base part; a barrier wall part formed on the etch stop layer while forming a cell on which a semiconductor light emitting device is mounted along an extension direction of the assembly electrodes. The etch stop layer is formed on at least a first region in which the assembly electrodes are formed among the entire region of the base part.

公开(公告)号：US20230015395A1

公开(公告)日：2023-01-19

申请号：US17780880

申请日：2019-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Jinhyung LEE ,  Changseo PARK ,  Younho HEO ,  Kisu KIM ,  Seongmin MOON

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a display device including a base portion; a first electrode formed on the base portion; a barrier rib portion stacked on the first electrode while forming a plurality of cells; a second electrode formed on the barrier rib portion; and semiconductor light emitting diodes seated in the plurality of cells, wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween.

公开(公告)号：US20250046772A1

公开(公告)日：2025-02-06

申请号：US18717799

申请日：2022-12-08

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Younho HEO ,  Hooyoung SONG

IPC: H01L25/13 ,  H01L33/48 ,  H01L33/62

Abstract: The substrate structure for transferring the pixel semiconductor light emitting device according to the embodiment may include a substrate having a plurality of assembly wiring; a partition wall disposed on the substrate and having an assembly hole into which a predetermined semiconductor light emitting device is assembled; and the partition wall may include a porous structure.

公开(公告)号：US20240038824A1

公开(公告)日：2024-02-01

申请号：US18227653

申请日：2023-07-28

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Younho HEO ,  Kwangheon KIM

IPC: H01L27/15 ,  G09G3/32

CPC classification number: H01L27/156 ,  G09G3/32 ,  G09G2300/0842

Abstract: Discussed is an assembly substrate structure of a display device including a semiconductor light emitting device and a display device having the same. The assembly substrate structure of the display device including a semiconductor light emitting device can include an assembly substrate, a first assembly electrode and a second assembly electrode disposed spaced apart from each other on the assembly substrate, a magnetic structure disposed under the first assembly electrode and the second assembly electrode and an insulating layer disposed between the first and second assembly electrodes and the magnetic structure.

公开(公告)号：US20230317669A1

公开(公告)日：2023-10-05

申请号：US18020516

申请日：2020-08-11

Applicant: LG ELECTRONICS INC.

Inventor： Jinhyung LEE ,  Younho HEO ,  Kisu KIM

IPC: H01L23/00 ,  H01L25/075 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L24/29 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/0093 ,  H01L24/24 ,  H01L24/73 ,  H01L24/27 ,  H01L24/32 ,  H01L2933/0066 ,  H01L2224/73267 ,  H01L2224/24225 ,  H01L2224/27502 ,  H01L2224/29186 ,  H01L2224/32225

Abstract: A display device according to the present invention is characterized by comprising: a base part; assembly electrodes extending in one direction and formed on the base part; a dielectric layer formed so as to cover the assembly electrodes; a barrier rib part stacked on the dielectric layer while forming holes so as to overlap the assembly electrodes; semiconductor light-emitting elements disposed inside the holes; and wiring electrodes electrically connected to the semiconductor light-emitting elements, wherein the assembly electrodes are formed so as to include Al, and the holes include AlOx.

公开(公告)号：US20180301577A1

公开(公告)日：2018-10-18

申请号：US15951379

申请日：2018-04-12

Applicant: LG Electronics Inc.

Inventor： Younho HEO ,  Soohyun KIM ,  Hyun LEE ,  Changhyun JEONG

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/0304 ,  H01L31/1868 ,  H01L31/1888 ,  H01L31/1892 ,  Y02E10/50

Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.