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    Multiple-layer, multiple film having the same and electronic device having the same
    5.
    发明授权
    Multiple-layer, multiple film having the same and electronic device having the same 有权
    具有相同的多层多层膜和具有该膜的电子器件

    公开(公告)号：US08119229B2

    公开(公告)日：2012-02-21

    申请号：US12452613

    申请日：2008-07-11

    申请人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Eun-Sil Lee, legal representative ,  Seung-Lac Ma ,  Myeong-Geun Ko

    发明人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Seung-Lac Ma ,  Myeong-Geun Ko

    IPC分类号： B32B7/02

    CPC分类号： C23C14/10 ,  C23C14/081 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/26

    摘要： The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.

    摘要翻译： 本发明提供一种包含两个或更多个第一无机材料层的多层; 以及位于所述两个第一无机材料层之间且具有小于5nm的厚度的一个或多个第二无机材料层，其中所述第一无机材料层由选自氧化硅，硅中的一种或多种材料形成 碳化物，氮化硅，氮化铝和ITO，第二无机材料层由选自镁，钙，铝，镓，铟，锌，锡，钡及其氧化物和氟化物的一种或多种材料形成， 包括多层的多层膜，以及包括该多层膜的电子器件。

    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME
    7.
    发明申请
    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开
    多层膜，具有该膜的多层膜和具有该膜的电子器件

    公开(公告)号：US20120193768A1

    公开(公告)日：2012-08-02

    申请号：US13401605

    申请日：2012-02-21

    申请人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Seung-Lac Ma ,  Myeong-Geun Ko ,  Eun-Sil Lee

    发明人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Seung-Lac Ma ,  Myeong-Geun Ko ,  Eun-Sil Lee

    IPC分类号： H01L23/29

    CPC分类号： C23C14/10 ,  C23C14/081 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/26

    摘要： The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.

    摘要翻译： 本发明提供一种包含两个或更多个第一无机材料层的多层; 以及位于所述两个第一无机材料层之间且具有小于5nm的厚度的一个或多个第二无机材料层，其中所述第一无机材料层由选自氧化硅，硅中的一种或多种材料形成 碳化物，氮化硅，氮化铝和ITO，第二无机材料层由选自镁，钙，铝，镓，铟，锌，锡，钡及其氧化物和氟化物的一种或多种材料形成， 包括多层的多层膜，以及包括该多层膜的电子器件。

    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME
    10.
    发明申请
    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME 有权
    多层膜，具有该膜的多层膜和具有该膜的电子器件

    公开(公告)号：US20100136308A1

    公开(公告)日：2010-06-03

    申请号：US12452613

    申请日：2008-07-11

    申请人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Eun-Sil Lee ,  Seung-Lac Ma ,  Myeong-Geun Ko

    发明人： Jang-Yeon Hwang ,  Dong-Ryul Kim ,  Gi-Cheul Kim ,  Sang-Uk Ryu ,  Ho-Jun Lee ,  Eun-Sil Lee ,  Seung-Lac Ma ,  Myeong-Geun Ko

    IPC分类号： B32B7/02 ,  B32B5/00

    CPC分类号： C23C14/10 ,  C23C14/081 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/26

    摘要： The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of more than 0 nm and less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.

    摘要翻译： 本发明提供一种包含两个或更多个第一无机材料层的多层; 以及位于两个第一无机材料层之间并且具有大于0nm且小于5nm的厚度的一个或多个第二无机材料层，其中第一无机材料层由选择的一种或多种材料形成 来自硅氧化物，碳化硅，氮化硅，氮化铝和ITO，第二无机材料层由选自镁，钙，铝，镓，铟，锌，锡，钡和氧化物中的一种或多种材料形成 和其氟化物，包括多层的多层膜，以及包括该多层膜的电子器件。