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公开(公告)号:US10654070B2
公开(公告)日:2020-05-19
申请号:US15750815
申请日:2017-03-31
Applicant: LG CHEM, LTD.
Inventor: Hee Wang Yang , Jang Yeon Hwang , Seong Hwan Lee
IPC: C08J7/18 , B05D3/14 , B32B38/00 , C08J7/12 , B32B27/08 , B32B27/28 , B32B27/18 , B32B7/02 , B05D7/04 , B05D7/26 , B05D7/00 , C08J7/04
Abstract: The present application relates to a method for preparing a barrier film. The present application can provide a method for preparing a barrier film having excellent barrier characteristics and optical performances. The barrier film produced by the method of the present application can be effectively used not only for packaging materials of as foods or medicines, and the like, but also for various applications, such as members for FPDs (flat panel displays) such as LCDs (Liquid Crystal Displays) or solar cells, substrates for electronic papers or OLEDs (Organic Light Emitting Diodes), or sealing films.
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公开(公告)号:US12091519B2
公开(公告)日:2024-09-17
申请号:US17286562
申请日:2019-10-22
Applicant: LG CHEM, LTD.
Inventor: Sung Jin Shin , Jang Yeon Hwang , Hee Joon Jeong , Bo Ra Park , Hee Wang Yang
IPC: C23C18/12 , C08J7/04 , C23C18/14 , H10K50/844
CPC classification number: C08J7/0423 , C23C18/122 , C23C18/1233 , C23C18/1295 , C23C18/143 , C08J2367/02 , C08J2433/16 , H10K50/844
Abstract: Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.
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公开(公告)号:US12006575B2
公开(公告)日:2024-06-11
申请号:US17286880
申请日:2019-10-22
Applicant: LG CHEM, LTD.
Inventor: Sung Jin Shin , Jang Yeon Hwang , Hee Joon Jeong , Bo Ra Park , Hee Wang Yang
CPC classification number: C23C18/122 , C08J7/048 , C08J7/06 , C23C16/34 , C23C18/1233 , C23C18/14 , C23C18/04 , H10K50/844
Abstract: Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10−4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.
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公开(公告)号:US12098258B2
公开(公告)日:2024-09-24
申请号:US17285189
申请日:2019-10-22
Applicant: LG CHEM, LTD.
Inventor: Sung Jin Shin , Jang Yeon Hwang , Hee Joon Jeong , Bo Ra Park , Hee Wang Yang
CPC classification number: C08J7/054 , C23C18/122 , C23C18/1233 , C23C18/1295 , C23C18/143 , C08J2335/02
Abstract: Provided is a barrier film, comprising:
a base layer; and
an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s,
wherein the second region has a higher elemental content of N than that of the first region,
the first region has a thickness of 50 nm or more, and
the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less,
the barrier film having excellent barrier properties and optical properties.
The barrier film can be used for electronic products sensitive to moisture or the like.-
公开(公告)号:US12098071B2
公开(公告)日:2024-09-24
申请号:US17287207
申请日:2019-10-22
Applicant: LG CHEM, LTD.
Inventor: Sung Jin Shin , Jang Yeon Hwang , Hee Joon Jeong , Bo Ra Park , Hee Wang Yang
IPC: C23C18/12 , C01B21/082 , C08J7/048 , C23C16/34 , C23C18/14 , H10K50/844
CPC classification number: C01B21/0823 , C08J7/048 , C23C16/34 , C23C18/1225 , C23C18/14 , H10K50/844 , C01P2002/85 , C01P2004/04
Abstract: Provided is a barrier film, comprising:
a base layer; and
an inorganic layer including Si, N, and O,
wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10−3 g/m2·day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.-
公开(公告)号:US11508937B2
公开(公告)日:2022-11-22
申请号:US17047508
申请日:2019-04-17
Applicant: LG CHEM, LTD.
Inventor: Hee Joon Jeong , Jang Yeon Hwang , Bo Ra Park , Sung Jin Shin , Hee Wang Yang
IPC: H01L51/50 , H01L51/52 , C09D133/14 , C09D183/16 , H01L51/56 , C08K5/00
Abstract: Provided is a light-diffusing barrier film. The film is an integral film comprising a barrier layer, a base layer and a light-diffusing layer, sequentially. The film can prevent moisture penetration into a device such as an organic light emitting device, and also imparts a light-diffusing function to the device. In particular, the film can have excellent moisture blocking properties even after a roll-to-roll process.
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公开(公告)号:US11458703B2
公开(公告)日:2022-10-04
申请号:US16767541
申请日:2018-11-28
Applicant: LG CHEM, LTD.
Inventor: Hee Joon Jeong , Jang Yeon Hwang , Bo Ra Park , Sung Jin Shin , Hee Wang Yang
IPC: B32B3/30 , B32B27/06 , C08G77/62 , C09D183/16 , B32B7/12
Abstract: Provided is a barrier film that includes a base layer (A), and a barrier layer (B) located on one side of the base layer and including one or more cured layers of polysilazane layers having a surface (S) of a concavo-convex structure formed by protruding particles, the barrier film having excellent barrier properties against the external environment, and excellent optical properties. The barrier film can be used for an electronic product sensitive to moisture.
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