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公开(公告)号：US20230230811A1
公开(公告)日：2023-07-20
申请号：US17998354
申请日：2021-05-25
发明人： Jengyi Yu , Da Li , Younghee Lee , Samantha S.H. Tan , Alan J. Jensen , Jun Xue , Mary Anne Manumpil
IPC分类号： H01J37/32 , H01L21/027 , H01L21/033 , G03F7/09 , G03F7/004 , G03F7/16 , G03F7/11
CPC分类号： H01J37/32449 , H01J37/32357 , H01L21/0274 , H01L21/0337 , H01L21/0332 , G03F7/094 , G03F7/0042 , G03F7/167 , G03F7/11 , H01J2237/3328 , H01J37/32816 , H01J37/321 , H01J37/32899
摘要： Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.
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公开(公告)号：US20240255850A1
公开(公告)日：2024-08-01
申请号：US18628111
申请日：2024-04-05
发明人： Samantha S.H. Tan , Jun Xue , Mary Anne Manumpil , Jengyi Yu , Da Li
IPC分类号： G03F7/09 , C23C16/04 , G03F1/22 , G03F7/00 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/027 , H01L21/033
CPC分类号： G03F7/094 , C23C16/047 , G03F1/22 , G03F7/091 , G03F7/167 , G03F7/2004 , G03F7/70033 , H01L21/02274 , H01L21/0274 , H01L21/0332
摘要： This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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公开(公告)号：US12062537B2
公开(公告)日：2024-08-13
申请号：US17439948
申请日：2020-03-18
IPC分类号： H01L21/02 , C23C16/26 , C23C16/455 , C23C16/505 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02274 , C23C16/26 , C23C16/45536 , C23C16/505 , H01L21/02115 , H01L21/0228 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.
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公开(公告)号：US20220282366A1
公开(公告)日：2022-09-08
申请号：US17753208
申请日：2020-08-28
发明人： Matthew Scott Weimer , Ragesh Puthenkovilakam , Gordon Alex Macdonald , Shaoqing Zhang , Shih-Ked Lee , Jun Xue , Samantha S.H. Tan , Xizhu Zhao , Mary Anne Manumpil , Eric A. Hudson , Chin-Jui Hsu
摘要： Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.
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公开(公告)号：US11314168B2
公开(公告)日：2022-04-26
申请号：US17310635
申请日：2021-01-11
发明人： Samantha S. H. Tan , Jun Xue , Mary Anne Manumpil , Jengyi Yu , Da Li
IPC分类号： G03F7/09 , C23C16/04 , H01L21/02 , H01L21/033 , G03F7/20 , H01L21/027 , G03F1/22 , G03F7/16
摘要： This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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公开(公告)号：US11988965B2
公开(公告)日：2024-05-21
申请号：US17452365
申请日：2021-10-26
发明人： Samantha S. H. Tan , Jun Xue , Mary Anne Manumpil , Jengyi Yu , Da Li
IPC分类号： G03F7/09 , C23C16/04 , G03F1/22 , G03F7/00 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/027 , H01L21/033
CPC分类号： G03F7/094 , C23C16/047 , G03F1/22 , G03F7/091 , G03F7/167 , G03F7/2004 , G03F7/70033 , H01L21/02274 , H01L21/0274 , H01L21/0332
摘要： This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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公开(公告)号：US20220035247A1
公开(公告)日：2022-02-03
申请号：US17310635
申请日：2021-01-11
发明人： Samantha S.H. Tan , Jun Xue , Mary Anne Manumpil , Jengyi Yu , Da Li
IPC分类号： G03F7/09 , G03F7/20 , H01L21/027 , H01L21/02 , H01L21/033 , C23C16/04
摘要： This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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