公开(公告)号：US08470715B2

公开(公告)日：2013-06-25

申请号：US12809021

申请日：2008-12-09

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31144 ,  H01L21/0276

Abstract: A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.

Abstract translation: 提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层中的线图案的方法。 该方法包括：在其中设置包括CF 3I的ARC开口气体，含有气体的碳氟化合物（包括氢氟烃）和含氧气体的ARC层，从ARC开口气体形成等离子体以打开ARC层，并且 提供ARC打开气体停止。 线图案特征通过打开的ARC层蚀刻到蚀刻层中。

公开(公告)号：US20090087996A1

公开(公告)日：2009-04-02

申请号：US12210777

申请日：2008-09-15

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.

Abstract translation: 为了实现上述目的，并且根据本发明的目的，提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层的方法。 ARC层被打开，并且通过图案化掩模将特征蚀刻到蚀刻层中。 ARC层的开口包括（1）提供包含含卤素气体COS和含氧气体的ARC开口气体，（2）从ARC开口气体形成等离子体以打开ARC层，以及（3）停止 提供ARC打开的气体来停止等离子体。 图案化掩模可以是具有线间隔图案的光致抗蚀剂（PR）掩模。 ARC打开气体中的COS降低蚀刻层的图案化特征的线宽粗糙度（LWR）。

公开(公告)号：US20100323525A1

公开(公告)日：2010-12-23

申请号：US12809021

申请日：2008-12-09

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/3065

CPC classification number: H01L21/31144 ,  H01L21/0276

Abstract: A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.

Abstract translation: 提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层中的线图案的方法。 该方法包括：在其中设置包括CF 3I的ARC开口气体，含有气体的碳氟化合物（包括氢氟烃）和含氧气体的ARC层，从ARC开口气体形成等离子体以打开ARC层，并且 提供ARC打开气体停止。 线图案特征通过打开的ARC层蚀刻到蚀刻层中。

公开(公告)号：US08501627B2

公开(公告)日：2013-08-06

申请号：US12679008

申请日：2008-09-16

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/302

CPC classification number: H01L21/31116

Abstract: A method for etching a dielectric layer is provided. The dielectric layer is disposed over a substrate and below a patterned mask having a line-space pattern. The method includes (a) providing an etchant gas comprising CF4, COS, and an oxygen containing gas, (b) forming a plasma from the etchant gas, and (c) etching the dielectric layer into the line-space pattern through the mask with the plasma from the etchant gas. The gas flow rate of CF4 may have a ratio greater than 50% of a total gas flow rate of all reactive gas components. The gas flow rate of COS may be between 1% and 50%. The method reduces bowing in etching of the dielectric layer by adding COS to the etchant gas.

Abstract translation: 提供了蚀刻介电层的方法。 电介质层设置在衬底上并且在具有线间距图案的图案化掩模之下。 该方法包括（a）提供包含CF 4，COS和含氧气体的蚀刻剂气体，（b）从蚀刻剂气体形成等离子体，和（c）通过掩模将电介质层蚀刻成线 - 空间图案， 来自蚀刻剂气体的等离子体。 CF4的气体流量可以具有大于所有反应气体组分的总气体流量的50％的比率。 COS的气体流量可以在1％和50％之间。 该方法通过向蚀刻剂气体中添加COS来减少蚀刻介电层的弯曲度。

公开(公告)号：US08158524B2

公开(公告)日：2012-04-17

申请号：US12210777

申请日：2008-09-15

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.

Abstract translation: 为了实现上述目的，并且根据本发明的目的，提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层的方法。 ARC层被打开，并且通过图案化掩模将特征蚀刻到蚀刻层中。 ARC层的开口包括（1）提供包含含卤素气体COS和含氧气体的ARC开口气体，（2）从ARC开口气体形成等离子体以打开ARC层，以及（3）停止 提供ARC打开的气体来停止等离子体。 图案化掩模可以是具有线间隔图案的光致抗蚀剂（PR）掩模。 ARC打开气体中的COS降低蚀刻层的图案化特征的线宽粗糙度（LWR）。

公开(公告)号：US20110053379A1

公开(公告)日：2011-03-03

申请号：US12679008

申请日：2008-09-16

Applicant: Kyeong-Koo Chi ,  Jonathan Kim

Inventor： Kyeong-Koo Chi ,  Jonathan Kim

IPC: H01L21/3065 ,  C23F1/08

CPC classification number: H01L21/31116

Abstract: A method for etching a dielectric layer is provided. The dielectric layer is disposed over a substrate and below a patterned mask having a line-space pattern. The method includes (a) providing an etchant gas comprising CF4, COS, and an oxygen containing gas, (b) forming a plasma from the etchant gas, and (c) etching the dielectric layer into the line-space pattern through the mask with the plasma from the etchant gas. The gas flow rate of CF4 may have a ratio greater than 50% of a total gas flow rate of all reactive gas components. The gas flow rate of COS may be between 1% and 50%. The method reduces bowing in etching of the dielectric layer by adding COS to the etchant gas.

Abstract translation: 提供了蚀刻介电层的方法。 电介质层设置在衬底上并且在具有线间距图案的图案化掩模之下。 该方法包括（a）提供包括CF 4，COS和含氧气体的蚀刻剂气体，（b）从蚀刻剂气体形成等离子体，和（c）通过掩模将电介质层蚀刻成线 - 空间图案， 来自蚀刻剂气体的等离子体。 CF4的气体流量可以具有大于所有反应气体组分的总气体流量的50％的比率。 COS的气体流量可以在1％和50％之间。 该方法通过向蚀刻剂气体中添加COS来减少蚀刻介电层的弯曲度。

公开(公告)号：US07682986B2

公开(公告)日：2010-03-23

申请号：US11671340

申请日：2007-02-05

Applicant: Kyeong-Koo Chi ,  Erik A. Edelberg

Inventor： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC: H01L21/302

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76816

Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.

Abstract translation: 提供了一种通过碳基掩模蚀刻介电层中的超高宽比特征的方法。 相对于碳基掩模选择性地蚀刻电介质层，其中选择性蚀刻提供基于碳基掩模的基于碳氟化合物的聚合物的净沉积。 选择性蚀刻停止。 相对于碳基掩模选择性地除去氟碳聚合物，使得使用修整保留碳基掩模。 停止选择性除去氟碳聚合物。 相对于碳基掩模再次选择性地蚀刻介电层，其中第二选择性蚀刻提供基于碳基掩模的碳氟基聚合物的净沉积。

公开(公告)号：US07491344B2

公开(公告)日：2009-02-17

申请号：US10703947

申请日：2003-11-04

Applicant: Heung-Sik Park ,  Chang-Jin Kang ,  Tae-Hyuk Ahn ,  Kyeong-Koo Chi ,  Sang-Hun Seo

Inventor： Heung-Sik Park ,  Chang-Jin Kang ,  Tae-Hyuk Ahn ,  Kyeong-Koo Chi ,  Sang-Hun Seo

IPC: C23F1/00

CPC classification number: H01J37/32055 ,  H01L21/3065 ,  H01L21/78 ,  H05H1/44

Abstract: Disclosed herein is a method for etching a face of an object and more particularly a method for etching a rear face of a silicon substrate. The object having a silicon face is positioned so as to be spaced apart from a plasma-generating member by a predetermined interval distance. The plasma-generating member generates arc plasmas to form a plasma region. A reaction gas is allowed to pass through the plasma region to generate radicals having high energies and high densities. The radicals react with the object to etch the face of the object. The face of the object can be rapidly and uniformly etched.

Abstract translation: 本文公开了一种用于蚀刻物体的表面的方法，更具体地，蚀刻硅衬底的背面的方法。 具有硅面的物体被定位成与等离子体产生构件间隔预定间隔距离。 等离子体产生部件产生电弧等离子体以形成等离子体区域。 允许反应气体通过等离子体区域以产生具有高能量和高密度的自由基。 自由基与物体反应以蚀刻物体的表面。 物体的表面可以快速均匀地蚀刻。

公开(公告)号：US20080188082A1

公开(公告)日：2008-08-07

申请号：US11671342

申请日：2007-02-05

Applicant: Kyeong-Koo Chi ,  Erik A. Edelberg

Inventor： Kyeong-Koo Chi ,  Erik A. Edelberg

IPC: H01L21/311 ,  H01L21/461

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

Abstract translation: 提供了一种通过蚀刻室中的基于碳的掩模来选择性地蚀刻超高宽比特征介电层的方法。 提供蚀刻气体的流动，其包括含氟碳分子和含氧分子到蚀刻室。 提供脉冲偏置RF信号。 提供激励RF信号以将蚀刻气体转换成等离子体。

公开(公告)号：US20050158948A1

公开(公告)日：2005-07-21

申请号：US11058670

申请日：2005-02-15

Applicant: Myeong-Cheol Kim ,  Chang-Jin Kang ,  Kyeong-Koo Chi ,  Seung-Young Son

Inventor： Myeong-Cheol Kim ,  Chang-Jin Kang ,  Kyeong-Koo Chi ,  Seung-Young Son

IPC: H01L21/28 ,  H01L21/60 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108

CPC classification number: H01L21/76831 ,  H01L21/76897 ,  H01L23/5226 ,  H01L27/10814 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer. The second interlayer insulating layer covers the first interlayer insulating layer, the capping layer, and the first spacer and has a planarized top surface. The contact plug passes through the second interlayer insulating layer, the first interlayer insulating layer, and the insulating layer between the conductive patterns, is electrically connected to the semiconductor substrate, has an outerwall surrounded by a second spacer, and is self-aligned with the capping layer.