Positive resist composition for immersion exposure and method of pattern formation with the same
    1.
    发明授权
    Positive resist composition for immersion exposure and method of pattern formation with the same 有权
    用于浸渍曝光的正型抗蚀剂组合物及其形成图案的方法

    公开(公告)号:US07273690B2

    公开(公告)日:2007-09-25

    申请号:US11060530

    申请日:2005-02-18

    IPC分类号: G03F7/00 G03F7/004

    摘要: A positive resist composition for immersion exposure which comprises (A) a resin which enhances its solubility in an alkaline developer by the action of an acid and (B) at least one compound which generates an acid upon irradiation with an actinic ray or a radiation, the compound being selected from the following (Ba) to (Bc): (Ba) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, (Bb) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, and (Bc) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the anion part; and a method of pattern formation with the composition.

    摘要翻译: 一种用于浸渍曝光的正型抗蚀剂组合物,其包含(A)通过酸的作用增强其在碱性显影剂中的溶解度的树脂和(B)至少一种在通过光化射线或辐射照射时产生酸的化合物, 所述化合物选自以下(Ba)至(Bc):(Ba)在阳离子部分具有特定烷基或环烷基残基的锍盐化合物,(Bb)具有特定烷基或环烷基残基的锍盐化合物 阳离子部分和(Bc)在阴离子部分具有特定烷基或环烷基残基的锍盐化合物; 以及用该组合物形成图案的方法。

    Positive resist composition for immersion exposure and pattern-forming method using the same
    2.
    发明授权
    Positive resist composition for immersion exposure and pattern-forming method using the same 有权
    用于浸渍曝光的正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07803511B2

    公开(公告)日:2010-09-28

    申请号:US11503958

    申请日:2006-08-15

    IPC分类号: G03F7/029

    摘要: A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å3), and van der Waals surface area of the acid as S (Å2).

    摘要翻译: 用于浸渍曝光的正型抗蚀剂组合物包括:(A)能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂,和(B)在用光化射线或辐射照射时能够产生酸的化合物,其中 该酸满足V≥230的条件,V / S&NlE; 0.93以V(Å3)的酸的范德瓦尔体积和酸的范德华表面积为S(Å2)。

    POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME
    4.
    发明申请
    POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME 有权
    用于浸没曝光的积极阻燃组合物和使用其的图案形成方法

    公开(公告)号:US20100310991A1

    公开(公告)日:2010-12-09

    申请号:US12858128

    申请日:2010-08-17

    IPC分类号: G03F7/20

    摘要: A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å3), and van der Waals surface area of the acid as S (Å2).

    摘要翻译: 用于浸渍曝光的正型抗蚀剂组合物包括:(A)能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂,和(B)在用光化射线或辐射照射时能够产生酸的化合物,其中 该酸满足V≥230的条件,V / S&NlE; 0.93以V(Å3)的酸的范德瓦尔体积和酸的范德华表面积为S(Å2)。

    Positive resist composition for immersion exposure and pattern-forming method using the same
    5.
    发明申请
    Positive resist composition for immersion exposure and pattern-forming method using the same 有权
    用于浸渍曝光的正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US20070042290A1

    公开(公告)日:2007-02-22

    申请号:US11503958

    申请日:2006-08-15

    IPC分类号: G03C1/00

    摘要: A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å3), and van der Waals surface area of the acid as S (Å2).

    摘要翻译: 用于浸渍曝光的正型抗蚀剂组合物包括:(A)能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂,和(B)在用光化射线或辐射照射时能够产生酸的化合物,其中 酸满足V> = 230和V / S <= 0.93的条件,以酸的范德瓦尔体积为V(3+),并且酸的范德华表面积为S( Å 2)。

    Positive resist composition for immersion exposure and method of pattern formation with the same
    6.
    发明申请
    Positive resist composition for immersion exposure and method of pattern formation with the same 有权
    用于浸渍曝光的正型抗蚀剂组合物及其形成图案的方法

    公开(公告)号:US20050186505A1

    公开(公告)日:2005-08-25

    申请号:US11060530

    申请日:2005-02-18

    摘要: A positive resist composition for immersion exposure which comprises (A) a resin which enhances its solubility in an alkaline developer by the action of an acid and (B) at least one compound which generates an acid upon irradiation with an actinic ray or a radiation, the compound being selected from the following (Ba) to (Bc): (Ba) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, (Bb) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, and (Bc) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the anion part; and a method of pattern formation with the composition.

    摘要翻译: 一种用于浸渍曝光的正型抗蚀剂组合物,其包含(A)通过酸的作用增强其在碱性显影剂中的溶解度的树脂和(B)至少一种在通过光化射线或辐射照射时产生酸的化合物, 所述化合物选自以下(Ba)至(Bc):(Ba)在阳离子部分具有特定烷基或环烷基残基的锍盐化合物,(Bb)具有特定烷基或环烷基残基的锍盐化合物 阳离子部分和(Bc)在阴离子部分具有特定烷基或环烷基残基的锍盐化合物; 以及用该组合物形成图案的方法。

    POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD
    7.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD 有权
    积极抵抗组成和形成方法

    公开(公告)号:US20110305991A1

    公开(公告)日:2011-12-15

    申请号:US13173210

    申请日:2011-06-30

    IPC分类号: G03F7/20 G03F7/039

    摘要: A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

    摘要翻译: 正型抗蚀剂组合物包含:(A)具有由通式(a1)表示的重复单元并通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; 和(C)具有氟原子和硅原子中的至少一个并且具有选自(x),(y)和(z)的基团的树脂; 和(D)溶剂:(x)碱溶性基团; (y)能够通过碱性显影剂的作用分解以使树脂(C)在碱性显影剂中的溶解度增加的基团; 和(z)通过酸的作用分解的基团,其中R表示氢原子或甲基,Rxa表示烷基或环烷基,n表示1至8的整数。

    Positive resist composition for immersion exposure and pattern-forming method using the same
    8.
    发明授权
    Positive resist composition for immersion exposure and pattern-forming method using the same 有权
    用于浸渍曝光的正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07947421B2

    公开(公告)日:2011-05-24

    申请号:US11335735

    申请日:2006-01-20

    申请人: Hiromi Kanda

    发明人: Hiromi Kanda

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition for immersion exposure comprising: (A) a resin having an alicyclic hydrocarbon structure, wherein the resin is capable of increasing a solubility of the resin (A) in an alkaline developer by an action of an acid; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation, wherein the resin (A) includes a component having a molecular weight of 1,000 or less in an area ration of 20% or less to an entire area in a pattern area by gel permeation chromatography, and a pattern-forming method using the same.

    摘要翻译: 一种用于浸渍曝光的正型抗蚀剂组合物,其包含:(A)具有脂环烃结构的树脂,其中所述树脂能够通过酸的作用增加树脂(A)在碱性显影剂中的溶解度; 和(B)能够在用光化学射线和辐射之一照射时产生酸的化合物,其中树脂(A)在面积比例为20%以下的分子量为1000以下的成分中包含 通过凝胶渗透色谱法在图案区域中的整个区域,以及使用其的图案形成方法。

    Pattern forming method
    10.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号:US07892722B2

    公开(公告)日:2011-02-22

    申请号:US11129488

    申请日:2005-05-16

    IPC分类号: G03F1/00

    摘要: A pattern forming method includes (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a fixed time, removing the pre-wet solution, and (c) a step of subjecting the resist film on the substrate to exposure through an immersion liquid.

    摘要翻译: 图案形成方法包括(a)在基板上形成抗蚀剂膜的步骤,(b)将预湿溶液铺展在抗蚀剂膜上的预湿步骤,并且在固定时间之后,除去预湿溶液 ,和(c)使基板上的抗蚀剂膜经过浸没液体曝光的步骤。