公开(公告)号：US20100310991A1

公开(公告)日：2010-12-09

申请号：US12858128

申请日：2010-08-17

Applicant: Haruki INABE ,  Hiromi Kanda ,  Kunihiko Kodama

Inventor： Haruki INABE ,  Hiromi Kanda ,  Kunihiko Kodama

IPC: G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/122 ,  Y10S430/126

Abstract: A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å3), and van der Waals surface area of the acid as S (Å2).

Abstract translation: 用于浸渍曝光的正型抗蚀剂组合物包括：（A）能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂，和（B）在用光化射线或辐射照射时能够产生酸的化合物，其中 该酸满足V≥230的条件，V / S＆NlE; 0.93以V（Å3）的酸的范德瓦尔体积和酸的范德华表面积为S（Å2）。

公开(公告)号：US20090123880A1

公开(公告)日：2009-05-14

申请号：US12331136

申请日：2008-12-09

Applicant: Shinichi KANNA ,  Haruki INABE ,  Hiromi KANDA

Inventor： Shinichi KANNA ,  Haruki INABE ,  Hiromi KANDA

IPC: G03F7/20

CPC classification number: G03F7/0758 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/111

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

Abstract translation: 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸作用下增加其在碱性显影剂中的溶解度的无硅树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团中的至少一种的基团的含硅树脂（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团，和（D）溶剂，该方法包括：（i）步骤 将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层，（ii）通过浸渍液体将抗蚀剂涂层曝光于光的步骤，（iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤，（iv ）加热抗蚀剂涂层的步骤，和（v）显影抗蚀涂层的步骤。

公开(公告)号：US20120115085A1

公开(公告)日：2012-05-10

申请号：US13345978

申请日：2012-01-09

Applicant: Hiromi KANDA ,  Shinichi KANNA ,  Haruki INABE

Inventor： Hiromi KANDA ,  Shinichi KANNA ,  Haruki INABE

IPC: G03F7/20 ,  G03F7/027 ,  G03F7/075 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

Abstract: A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

Abstract translation: 一种正型抗蚀剂组合物，其包含：（A）通过酸的作用在碱性显影液中具有增强的溶解度的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）含有选自（x）〜（z）中的至少一种基团的含氟化合物; 和（F）溶剂，以及组合物的图案形成方法：（x）碱溶性基团; （y）通过碱性显影液的作用分解以提高在碱性显影液中的溶解度的基团; 和（z）通过酸的作用分解的基团。

公开(公告)号：US20120015293A1

公开(公告)日：2012-01-19

申请号：US13228135

申请日：2011-09-08

Applicant: Hiromi KANDA ,  Haruki INABE

Inventor： Hiromi KANDA ,  Haruki INABE

IPC: G03F7/32 ,  H01L21/77 ,  G03F7/039

CPC classification number: G03F7/039 ,  C07C69/54 ,  C08F214/18 ,  C08F220/22 ,  C08F220/26 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  H01L21/0274 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/146

Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.

Abstract translation: 用于液浸暴露的正型抗蚀剂组合物包括：（A）具有单环或多环脂环族烃结构的树脂，所述树脂通过酸作用增加其在碱性显影剂中的溶解度; （B）在用光化射线和放射线之一照射时产生酸的化合物; （C）具有5个以上碳原子的烷基的碱溶性化合物; 和（D）溶剂。

公开(公告)号：US20100068661A1

公开(公告)日：2010-03-18

申请号：US12618365

申请日：2009-11-13

Applicant: Shinichi KANNA ,  Haruki INABE ,  Hiromi KANDA

Inventor： Shinichi KANNA ,  Haruki INABE ,  Hiromi KANDA

IPC: G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.

Abstract translation: 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸的作用下增加其在碱性显影剂中的溶解度的无氟树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团（XI）中的至少一种基团的含氟树脂，（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团; 和（D）溶剂，所述方法包括：（i）将正性抗蚀剂组合物施加到基材以形成抗蚀剂涂层的步骤; （ii）通过浸没液体使抗蚀剂涂层曝光的步骤; （iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤; （iv）加热抗蚀剂涂层的步骤; 和（v）开发抗蚀剂涂层的步骤。

公开(公告)号：US20080161521A1

公开(公告)日：2008-07-03

申请号：US11859860

申请日：2007-09-24

Applicant: Haruki INABE

Inventor： Haruki INABE

IPC: C08G77/04

CPC classification number: C09D183/04 ,  C08G77/045

Abstract: A production method of an insulating film forming composition includes a process of filtering a composition through a filter made of polyethylene or nylon.

Abstract translation: 绝缘膜形成组合物的制造方法包括通过由聚乙烯或尼龙制成的过滤器对组合物进行过滤的方法。

公开(公告)号：US20080081121A1

公开(公告)日：2008-04-03

申请号：US11858644

申请日：2007-09-20

Applicant: Kensuke MORITA ,  Haruki INABE

Inventor： Kensuke MORITA ,  Haruki INABE

IPC: C08F30/08 ,  B05D3/02

CPC classification number: C08F230/08

Abstract: A composition includes at least one kind polymer, each of which includes a repeating unit(s) derived from at least one compound selected from the group consisting of compounds represented by the following formulas (I) to (IV): R4Si  (I) R3Si—(X—SiR2)m—X—Si—R3  (II) *—(X—SiR2)n—*  (III) m.RSi(O0.5)3  (IV) wherein the symbols in the formulas are defined in the specification.

Abstract translation: 组合物包括至少一种聚合物，每种聚合物包括衍生自至少一种选自由下式（I）至（IV）表示的化合物的化合物的重复单元：<？在线 -formulae description =“In-line Formulas”end =“lead”？> R Si（I）<？in-line-formula description =“In-line Formulas”end =“tail” ？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R 3 Si-（X-SiR 2）_{（n）-X-Si-R 3（II）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> * - （X-SiR 2） -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> m.RSi（O < （IV）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中公式中的符号在说明书中定义。}

公开(公告)号：US20090247701A1

公开(公告)日：2009-10-01

申请号：US12413017

申请日：2009-03-27

Applicant: Haruki INABE

Inventor： Haruki INABE

IPC: C08L53/00 ,  C08L25/02

CPC classification number: C08L25/06 ,  C08G2261/312 ,  C08L53/00 ,  C08L65/02 ,  C08L2205/03 ,  C08L2666/02

Abstract: An object of the invention is to provide a composition for forming an insulating film which can form an insulating film having a lowered dielectric constant using a hole forming agent, wherein the generation of spaces (voids) in which holes are connected to one another is prevented.The above problem is solved by forming an insulating film using a composition for forming an insulating film, characterized by comprising: (A) a polyphenylene, (B) a styrene polymer, and (C) a block copolymer or a graft copolymer comprising a unit having an affinity to said polyphenylene (A) and a unit having an affinity to said styrene polymer (B).

Abstract translation: 本发明的目的是提供一种用于形成绝缘膜的组合物，其可以使用空穴形成剂形成具有降低的介电常数的绝缘膜，其中防止孔彼此连接的空间（空隙）的产生 。 通过使用用于形成绝缘膜的组合物形成绝缘膜来解决上述问题，其特征在于包括：（A）聚苯，（B）苯乙烯聚合物，和（C）嵌段共聚物或含有单元的接枝共聚物 对所述聚苯（A）具有亲和性，和对所述苯乙烯聚合物（B）具有亲和性的单元。