REFERENCE WAFER FOR CALIBRATING SEMICONDUCTOR EQUIPMENT
    1.
    发明申请
    REFERENCE WAFER FOR CALIBRATING SEMICONDUCTOR EQUIPMENT 审中-公开
    用于校准半导体设备的参考波形

    公开(公告)号:US20070037078A1

    公开(公告)日:2007-02-15

    申请号:US11463826

    申请日:2006-08-10

    CPC classification number: G01R31/318511 G01R31/2831 G01R31/3193

    Abstract: A reference wafer for calibrating a laser and a camera and checking laser accuracy and spot size. The reference wafer may include a light absorption layer on a semiconductor substrate and a light reflection layer pattern on the light absorption layer. The light reflection layer pattern may include a first pattern for checking the laser accuracy and spot size and a second pattern for calibrating the laser and camera. A first anti-reflective layer may be introduced between the light absorption layer and the semiconductor substrate, and a second anti-reflective layer may be introduced between the light absorption layer and the light reflection layer pattern.

    Abstract translation: 用于校准激光和相机的参考晶片,并检查激光精度和光斑尺寸。 参考晶片可以包括半导体衬底上的光吸收层和光吸收层上的光反射层图案。 光反射层图案可以包括用于检查激光精度和光斑尺寸的第一图案和用于校准激光和照相机的第二图案。 可以在光吸收层和半导体衬底之间引入第一抗反射层,并且可以在光吸收层和光反射层图案之间引入第二抗反射层。

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