Lupinus plant named 'LSTYE05-0'
    5.
    植物专利

    公开(公告)号:US20190014704P1

    公开(公告)日:2019-01-10

    申请号:US15998133

    申请日:2018-07-05

    申请人: Kazunori Sato

    发明人: Kazunori Sato

    IPC分类号: A01H6/54

    摘要: A new and distinct Lupinus cultivar named ‘LSTYE05-0’ is disclosed, characterized by distinctive clear yellow flowers. Plants uniquely bloom under both short day and long day conditions without vernalization. The new cultivar is a Lupinus, suitable for ornamental purposes.

    Bidens plant named ‘Sunbidevb 3’
    6.
    植物专利
    Bidens plant named ‘Sunbidevb 3’ 有权
    拜登植物名为“Sunbidevb 3”

    公开(公告)号:USPP27763P3

    公开(公告)日:2017-03-07

    申请号:US14545149

    申请日:2015-03-31

    申请人: Kazunori Sato

    发明人: Kazunori Sato

    IPC分类号: A01H5/02

    CPC分类号: A01H6/14 A01H5/02

    摘要: A new and distinct cultivar of Bidens plant named ‘Sunbidevb 3’, characterized by its upright and mounding plant habit; vigorous growth habit; freely branching habit; freely flowering habit; year-round flowering habit; during the summer, inflorescences have orange yellow and orange red-colored ray florets; and good garden performance.

    摘要翻译: 一种新颖而独特的拜登植物品种名为“Sunbidevb 3”,其特点是其直立和堆积的植物习性; 生长习惯旺盛 自由分支习惯; 自由开花的习惯​​; 全年开花习惯; 在夏天,花序有橙黄色和橙色红色的小花; 和良好的花园表演。

    Bidens plant named 'Sunbidevb 3'
    7.
    植物专利
    Bidens plant named 'Sunbidevb 3' 有权
    拜登植物名为“Sunbidevb 3”

    公开(公告)号:US20160295789P1

    公开(公告)日:2016-10-06

    申请号:US14545149

    申请日:2015-03-31

    申请人: Kazunori Sato

    发明人: Kazunori Sato

    IPC分类号: A01H5/00

    CPC分类号: A01H6/14 A01H5/02

    摘要: A new and distinct cultivar of Bidens plant named ‘Sunbidevb 3’, characterized by its upright and mounding plant habit; vigorous growth habit; freely branching habit; freely flowering habit; year-round flowering habit; during the summer, inflorescences have orange yellow and orange red-colored ray florets; and good garden performance.

    摘要翻译: 一种新颖而独特的拜登植物品种名为“Sunbidevb 3”,其特点是其直立和堆积的植物习性; 生长习惯旺盛 自由分支习惯; 自由开花的习惯​​; 全年开花习惯; 在夏天,花序有橙黄色和橙色红色的小花; 和良好的花园表演。

    CONTROL METHOD AND CONTROL SYSTEM FOR PARALLEL OPERATION OF DIFFERENT TYPES OF POWER GENERATION APPARATUSES
    8.
    发明申请
    CONTROL METHOD AND CONTROL SYSTEM FOR PARALLEL OPERATION OF DIFFERENT TYPES OF POWER GENERATION APPARATUSES 有权
    不同发电装置并联运行的控制方法与控制系统

    公开(公告)号:US20140152112A1

    公开(公告)日:2014-06-05

    申请号:US14127250

    申请日:2012-06-19

    IPC分类号: H02J3/46

    摘要: A parallel operation control method for different type power generation apparatuses to shift the power generation apparatuses having respective different drooping characteristics, in which the drooping characteristic is defined as a characteristic of decrease of a rated frequency along with an increase of a load, from independent operation of the power generation apparatuses under suitable drooping characteristics to parallel operation thereof to drive a common drive target, includes determining a load of one of the power generation apparatuses by subtracting a load of the other of the power generation apparatuses from a predetermined required load; changing a drooping characteristic of the one of the power generation apparatuses so as to coincide with a drooping characteristic of the other of the power generation apparatuses; and controlling the one of the power generation apparatuses so as to maintain frequency at the time of changing the drooping characteristic.

    摘要翻译: 一种用于不同类型发电装置的并联运行控制方法,用于将具有各种不同下垂特性的发电装置从其独立运行中移除,其中下降特性被定义为额定频率随着负载的增加而降低的特性 的发电装置的并联运行以驱动公共驱动目标,包括通过从预定的所需负载减去另一个所述发电装置的负载来确定所述发电装置中的一个的负载; 改变所述一个发电装置的下垂特性,以便与另一个所述发电装置的下垂特性一致; 并且控制发电装置之一,以便在改变下垂特性时保持频率。

    Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics
    10.
    发明申请
    Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics 审中-公开
    基于铁磁IV基的半导体,基于铁磁III-V族的化合物半导体或基于铁磁性II-IV族的化合物半导体,以及用于调整其铁磁特性的方法

    公开(公告)号:US20060108619A1

    公开(公告)日:2006-05-25

    申请号:US10516687

    申请日:2003-06-05

    IPC分类号: H01L29/94 H01L21/00

    摘要: Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu. The ferromagnetic characteristic of the ferromagnetic semiconductor is controlled by adjusting the concentration of the rare-earth metal element, combining two or more of the rare-earth metal elements or adding a p-type or n-type dopant. The present invention can provide a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor which exhibits light transparency and stable ferromagnetic characteristics.

    摘要翻译: 公开了一种铁基IV族半导体或基于III-V族或II-VI族的化合物半导体,其包含基于IV族的半导体或III-V族或II-VI族 化合物半导体,其含有选自Ce,Pr,Nd,Pm,Sm,Eu,Gd,Th,Dy,Ho,Er,Tm,Yb和Lu中的至少一种稀土金属元素。 通过调节稀土金属元素的浓度,组合两种或更多种稀土金属元素或添加p型或n型掺杂剂来控制铁磁性半导体的铁磁特性。 本发明可以提供具有光透射性和稳定的铁磁特性的铁磁性IV族半导体或基于III-V族或II-VI族的化合物半导体。