Positive photoresist composition containing alkali soluble resins and
quinonediazide ester mixture
    1.
    发明授权
    Positive photoresist composition containing alkali soluble resins and quinonediazide ester mixture 失效
    含有碱溶性树脂和醌二叠氮化物酯混合物的正性光致抗蚀剂组合物

    公开(公告)号:US5639587A

    公开(公告)日:1997-06-17

    申请号:US615832

    申请日:1996-03-14

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition is disclosed, which comprises an alkali-soluble resin, at least one of 1,2-naphthoquinonediazidesulfonic monoesters of specific polyhydroxy compounds, and at least one of 1,2-naphthoquinonediazidesulfonic ester of specific polyhydroxy compounds. The positive photoresist composition exhibits remarkably improved sensitivity and resolution, and broad development latitude regardless of the film thickness, and further, low film thickness dependence of resist performances.

    摘要翻译: 公开了一种正性光致抗蚀剂组合物,其包含碱溶性树脂,特定多羟基化合物的1,2-萘醌二叠氮化物磺酸单酯中的至少一种和特定多羟基化合物的1,2-萘醌二叠氮化物磺酸酯中的至少一种。 正光致抗蚀剂组合物显示出显着提高的灵敏度和分辨率,并且广泛的开发纬度,而不管膜厚度如何,以及抗蚀剂性能的低膜厚依赖性。

    Positive photoresist composition
    2.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5629128A

    公开(公告)日:1997-05-13

    申请号:US531081

    申请日:1995-09-20

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.

    摘要翻译: 描述了一种正型光致抗蚀剂组合物,其包含由下式(I)表示的多羟基化合物的碱溶性树脂和1,2-萘醌 - 二叠氮基-5-(和/或-4-)磺酸盐: (I)其中R 1至R 11相同或不同,并且各自表示氢原子,卤素原子,烷基,芳基,烷氧基,酰基或环烷基,条件是R 1至R 11中的至少一个 R11为环烷基; A表示-CH(R 12) - ,其中R 12表示氢原子或烷基; m表示2或3。

    Positive photoresist composition
    3.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5747218A

    公开(公告)日:1998-05-05

    申请号:US736206

    申请日:1996-10-25

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition for ultrafine working ensuring high sensitivity, high resolution, improved film thickness dependency and improved exposure margin, which comprises an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a polyhydroxy compound of formula (I), the tetraester component thereof accounting for 50% or more of the entire pattern area determined by high-performance liquid chromatography using ultraviolet rays of 254 nm: ##STR1## wherein X represents ##STR2## and the substituents other than X are as defined in the specification.

    摘要翻译: 一种用于超细工作的正性光致抗蚀剂组合物,其确保高灵敏度,高分辨率,改善的膜厚度依赖性和改善的曝光余量,其包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯 的式(I)的多羟基化合物,其四酯成分占全部图案面积的50%以上,通过使用254nm的紫外线的高效液相色谱法测定:其中X表示,除X以外的取代基如说明书中所定义。

    Positive working photosensitive compositions
    4.
    发明授权
    Positive working photosensitive compositions 失效
    正光敏组合物

    公开(公告)号:US5609983A

    公开(公告)日:1997-03-11

    申请号:US449294

    申请日:1995-05-24

    CPC分类号: G03F7/022

    摘要: There is provided a positive working photosensitive composition suitable for photosensitive lithographic printing plate or photoresist for fine processing, which comprises a quinonediazide ester compound having the structure characterized by containing in the same molecule both quinonediazide structure and N-sulfonylamide [--C(.dbd.O)--NHSO.sub.2 --] or sulfonamide [--NHSO.sub.2 --] structure which are positioned independently of each other.

    摘要翻译: 提供了适用于光敏平版印刷版或精细加工用光致抗蚀剂的正性感光性组合物,其包含具有以下相同分子结构的醌二叠氮化物酯化合物:醌二叠氮化物结构和N-磺酰胺[-C(= O) -NHSO 2 - ]或磺酰胺[-NHSO 2 - ]结构。

    Positive photoresist composition
    5.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5750310A

    公开(公告)日:1998-05-12

    申请号:US636408

    申请日:1996-04-23

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: There are provided a positive photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or-4-) sulfonic ester of a tetrahydroxy compound having a specific structure, said ester component having a pattern area in the high-performance liquid chromatography determined using ultraviolet rays of 254 nm accounting for 50% or more of the entire pattern area and a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of two kinds of specific polyhydroxy compounds. The positive photoresist is suitable for ultrafine working and ensures high sensitivity and high resolution and is improved with respect to film thickness dependency and standing wave.

    摘要翻译: 提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和具有特定结构的四羟基化合物的1,2-萘醌二叠氮化物-5-(和/或 - ))磺酸酯,所述酯组分具有图案区域 使用254nm的紫外线确定的全部图案区域的50%以上的高效液相色谱法和包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4 - )两种特定多羟基化合物的磺酸酯。 正性光致抗蚀剂适用于超细加工,确保高灵敏度和高分辨率,并且在膜厚度依赖性和驻波方面得到改善。

    Radiation ray sensitive resin compostion containing at least two
different naphthoquinonediazide sulfonic acid esters and an
alkali-soluble low-molecular compound
    6.
    发明授权
    Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound 失效
    含有至少两种不同的萘醌二叠氮化物磺酸酯和碱溶性低分子化合物的辐射敏感树脂组合物

    公开(公告)号:US5700620A

    公开(公告)日:1997-12-23

    申请号:US676917

    申请日:1996-07-08

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: Disclosed is a radiation ray sensitive resin composition comprising a water-insoluble, alkali-soluble resin, a water-insoluble, alkali-soluble low-molecular compound and a radiation ray sensitive component, in which said radiation ray sensitive component contains a mixture composed of (A) a napthoquinonediazide sulfonic acid diester of water-insoluble, alkali-soluble low-molecular compounds having three and/or four phenolic hydroxyl groups and (B) a napthoquinonediazide sulfonic acid ester of a water-insoluble, alkali-soluble low-molecular compound having from 5 to 7 phenolic hydroxyl groups, in an amount of 30% or more of said radiation ray sensitive component. The composition is a positive type photoresist having a high resolution and small film thickness dependence. This has a broad latitude for development and leaves a small resist residue after development. This has high heat resistance and is therefore highly resistant to dry etching.

    摘要翻译: 本发明公开了一种辐射线敏感性树脂组合物,其包含水不溶性碱溶性树脂,水不溶性碱溶性低分子化合物和放射线敏感性成分,其中所述辐射敏感成分含有由 (A)具有三个和/或四个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮磺酸二酯和(B)不溶于水的碱溶性低分子量的萘醌二叠氮化物磺酸酯 具有5至7个酚羟基的化合物,其量为所述辐射敏感组分的30%或更多。 该组合物是具有高分辨率和薄膜厚度依赖性的正型光致抗蚀剂。 这具有广泛的发展空间,在开发后留下了小的抗蚀剂残留物。 这具有高耐热性,因此高耐干腐蚀性。

    Positive-working photoresist composition
    7.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US5609982A

    公开(公告)日:1997-03-11

    申请号:US357748

    申请日:1994-12-16

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.

    摘要翻译: 本发明提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和特定的水不溶性碱溶性低分子化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中 使用254nm紫外线的酯的高效液相色谱显示对应于酯的二酯组分和完全酯组分的图案分别落在特定范围内,并且包含非水溶性的正性光致抗蚀剂组合物 碱溶性树脂,水不溶性碱溶性低分子化合物和电离敏感性放射性化合物,其包含具有三个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮烷磺酸二酯的混合物作为 电离敏感的放射性化合物(A)和不溶于水的碱溶性低分子化合物的萘醌二叠氮化物二酯 具有基于电离敏感性放射性化合物的总量为30重量%以上的量的四个酚羟基作为电离敏感性放射性化合物(B)的量。

    Method for debindering of powder molded body
    8.
    发明授权
    Method for debindering of powder molded body 失效
    粉末成型体脱粘方法

    公开(公告)号:US06649106B2

    公开(公告)日:2003-11-18

    申请号:US10070553

    申请日:2002-03-07

    IPC分类号: B29B1500

    摘要: A method for debindering of powder molded body, including dipping, in an extracting solution an aqueous surfactant solution, a ceramic powder or metal powder molded body containing a binder with at least two kinds of binder components, to selectively extract and remove at least one kind of binder component from the molded body, and then removing the binder components remaining in the molded body after extraction. This debindering method permits rapid debindering while preventing the generation of defects such as cracks and the like, is highly safe to human health and environment, and requires a low facility cost.

    摘要翻译: 一种粉末成型体的脱粘方法,包括在萃取溶液中浸渍表面活性剂水溶液,含有粘合剂的陶瓷粉末或金属粉末成型体至少具有两种粘合剂成分,以选择性地提取和除去至少一种 的粘合剂成分,然后在萃取后除去留在成型体中的粘合剂成分。 这种脱粘方法允许快速脱粘,同时防止诸如裂纹等的缺陷的产生对人体健康和环境是高度安全的,并且需要低设备成本。

    Fine pattern forming method
    9.
    发明授权
    Fine pattern forming method 失效
    精细图案形成方法

    公开(公告)号:US06497996B1

    公开(公告)日:2002-12-24

    申请号:US09562076

    申请日:2000-05-01

    IPC分类号: G03F736

    CPC分类号: G03F7/095 G03F7/0757

    摘要: As shown in FIG. 1A, a first resist film 2 comprising organic high molecules and a second resist film 3 comprising a photosensitive material are sequentially applied to a substrate 1 by the spin coat method or the spray method for forming a two-layer resist. Then, a mask 4 with which a metallic fine opening pattern 6 is formed on a mask substrate 5 comprising a dielectric, such as glass, is tightly contacted with the two-layer resist. Then, light is projected onto the back of the mask substrate to carry out exposure with near field light 7 which is effused from the opening portions of the mask 4 where no metal is formed. Then, a pattern is formed by processing the second resist layer 3 for development with a developing solution. Thereafter, with the pattern in the second resist layer 3 being used as a mask, the first resist layer 2 is dry-etched with O2 plasma to form a fine pattern having a high aspect ratio, and with the pattern in the two-layer resist, the substrate is worked by etching, vapor deposition, or the like, before the two-layer resist is peeled off.

    摘要翻译: 如图所示。 如图1A所示,通过旋涂法或用于形成双层抗蚀剂的喷涂方法将包含有机高分子的第一抗蚀剂膜2和包含感光材料的第二抗蚀剂膜3依次施加到基板1上。 然后,在包括诸如玻璃的电介质的掩模基板5上形成有金属细孔图案6的掩模4与双层抗蚀剂紧密接触。 然后,将光投射到掩模基板的背面上,以从未形成金属的掩模4的开口部分流出的近场光7进行曝光。 然后,通过用显影液处理用于显影的第二抗蚀剂层3来形成图案。 此后,利用第二抗蚀剂层3中的图案作为掩模,用O 2等离子体干蚀刻第一抗蚀剂层2,以形成具有高纵横比的精细图案,并且在两层抗蚀剂中的图案 在剥离两层抗蚀剂之前,通过蚀刻,蒸镀等进行基板的加工。

    Positive photoresist composition
    10.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5565300A

    公开(公告)日:1996-10-15

    申请号:US647904

    申请日:1991-01-30

    摘要: A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt % to 0 wt %.The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.

    摘要翻译: 公开了含有碱溶性树脂和通过多羟基化合物和(a)1,2-萘醌二叠氮基-5-(和/或-4-)磺酰氯反应获得的光敏物质的光致抗蚀剂组合物,所述光致抗蚀剂组合物 感光性物质为光敏性化合物(1)〜(3)的混合物:(1)每分子具有至少一个羟基并且具有1,2-萘醌二叠氮基-5-(和/或-4 - )磺酰氯磺酸盐基团,其含量为50重量%以上的含有3〜20重量份的光敏物质的羟基; (2)感光性物质中含有多重羟基化合物中的全部羟基的化合物为感光性物质中的含量为30重量%〜0重量%的感光性化合物, 和(3)感光性物质中含有20重量%〜0重量%的含有3个以上不具有每分子1,2-萘醌二氮杂磺酰基酯化的羟基的感光性化合物。 该组合物适用于用g射线,i射线和准分子激光曝光以提供清晰的抗蚀剂图像。 光致抗蚀剂组合物还具有高灵敏度,高分辨能力,精确的再现性,以提供具有良好的截面形状,宽的显影宽度,高耐热性和良好的储存稳定性的抗蚀剂图像。