Positive-type photoresist composition
    1.
    发明授权
    Positive-type photoresist composition 失效
    正型光致抗蚀剂组合物

    公开(公告)号:US5248582A

    公开(公告)日:1993-09-28

    申请号:US987562

    申请日:1992-12-08

    IPC分类号: G03F7/022

    CPC分类号: G03F7/022

    摘要: A positive type photoresist composition which comprises an alkali soluble novolak resin and at least one light-sensitive material represented by the following general formulae (I) to (IV) to provide a resist pattern with high resolution, high reproduction fidelity, desirable sectional shape, wide latitude of development, high heat resistance and high storage stability: ##STR1## (wherein X represents --CO--, or --SO.sub.2 --; p represents an integer from 2 to 4; R's may be the same or different, each being --H, --OH, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted acyl group, a substituted or unsubstituted acyloxy group, ##STR2## provided that R always contains at least one of ##STR3## ; R.sub.1 represents ##STR4## a substituted or unsubstituted di- to tetra-valent alkyl group, or a substituted or unsubstituted di- to tetra-valent aromatic group; and l, m and n Represent O or an integer of from 1 to 3, provided that at least one of them is not zero).

    摘要翻译: 一种正型光致抗蚀剂组合物,其包含碱溶性酚醛清漆树脂和由以下通式(I)至(IV)表示的至少一种感光材料,以提供具有高分辨率,高再现保真度,期望的截面形状的抗蚀剂图案, 宽范围的发展,高耐热性和高储存稳定性:其中X表示-CO-或-SO 2 - ;其中X表示-CO-或-SO 2 - ; p表示2至4的整数; R可以相同或不同,各自为-H,-OH,取代或未取代的烷基,取代或未取代的烷氧基,取代或未取代的芳基,取代或未取代的 芳烷基,取代或未取代的酰基,取代或未取代的酰氧基,条件是R总是包含至少一个; R 1表示取代或未取代的二价至四价的烷基 ,或替代或未授权 抽出二价至四价芳基; 和l,m和n表示O或1至3的整数,条件是它们中的至少一个不为零)。

    Positive photoresist composition
    2.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5565300A

    公开(公告)日:1996-10-15

    申请号:US647904

    申请日:1991-01-30

    摘要: A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt % to 0 wt %.The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.

    摘要翻译: 公开了含有碱溶性树脂和通过多羟基化合物和(a)1,2-萘醌二叠氮基-5-(和/或-4-)磺酰氯反应获得的光敏物质的光致抗蚀剂组合物,所述光致抗蚀剂组合物 感光性物质为光敏性化合物(1)〜(3)的混合物:(1)每分子具有至少一个羟基并且具有1,2-萘醌二叠氮基-5-(和/或-4 - )磺酰氯磺酸盐基团,其含量为50重量%以上的含有3〜20重量份的光敏物质的羟基; (2)感光性物质中含有多重羟基化合物中的全部羟基的化合物为感光性物质中的含量为30重量%〜0重量%的感光性化合物, 和(3)感光性物质中含有20重量%〜0重量%的含有3个以上不具有每分子1,2-萘醌二氮杂磺酰基酯化的羟基的感光性化合物。 该组合物适用于用g射线,i射线和准分子激光曝光以提供清晰的抗蚀剂图像。 光致抗蚀剂组合物还具有高灵敏度,高分辨能力,精确的再现性,以提供具有良好的截面形状,宽的显影宽度,高耐热性和良好的储存稳定性的抗蚀剂图像。

    Positive-working photoresist composition

    公开(公告)号:US5173389A

    公开(公告)日:1992-12-22

    申请号:US514811

    申请日:1990-04-26

    CPC分类号: G03F7/022

    摘要: A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.

    Positive type photoresist composition comprising as a photosensitive
ingredient a derivative of a triphenylmethane condensed with an
o-quinone diazide
    4.
    发明授权
    Positive type photoresist composition comprising as a photosensitive ingredient a derivative of a triphenylmethane condensed with an o-quinone diazide 失效
    正型光致抗蚀剂组合物,其包含与邻醌重氮化物缩合的三苯甲烷的衍生物作为感光成分

    公开(公告)号:US5153096A

    公开(公告)日:1992-10-06

    申请号:US670513

    申请日:1991-03-18

    IPC分类号: G03C1/72 G03F7/022 H01L21/027

    CPC分类号: G03F7/022

    摘要: A positive type photoresist composition comprising at least one light-sensitive material, as defined herein, and an alkali-soluble novolak resin, has a high resolving power, particularly when used in semiconductor devices, accurately reproduces mask dimensions over a wide photomask line width range, from a resist pattern in a cross-sectional form having a high aspect ratio in a pattern having a line width of no greater than 1 .mu.m, has a wide developing latitude and excellent heat resistance.

    摘要翻译: 包含如本文所定义的至少一种感光材料和碱溶性酚醛清漆树脂的正型光致抗蚀剂组合物具有高分辨能力,特别是当用于半导体器件时,在宽的光掩模线宽度范围内精确地再现掩模尺寸 从具有不大于1μm的线宽的图案的具有高纵横比的横截面形式的抗蚀剂图案具有宽的显影宽度和优异的耐热性。

    Positive type 1,2-naphthoquinonediazide photoresist composition
containing benzotriazole light absorbing agent
    5.
    发明授权
    Positive type 1,2-naphthoquinonediazide photoresist composition containing benzotriazole light absorbing agent 失效
    含有苯并三唑光吸收剂的正型1,2-萘醌二叠氮化物光致抗蚀剂组合物

    公开(公告)号:US5360692A

    公开(公告)日:1994-11-01

    申请号:US70795

    申请日:1993-06-03

    摘要: There is disclosed a positive type photoresist composition comprising an alkali-soluble resin, a compound having a 1,2-naphthoquinonediazido group, and at least one light absorbing agent selected from the group consisting of the compounds represented by the following formulae [I] and [II], the content of said light absorbing agent being in the range of 0.1 to 10% by weight based on the total solid content of the composition: ##STR1## wherein X represents a hydrogen atom, a halogen atom, an alkyl group, an aralkyl group, an alkoxy group, an acyl group, or an aryl group; Y represents a single bond, an alkylene group, --O--, --S--, --SO.sub.2 --or ##STR2## R represents a hydrogen atom, an alkyl group, or an aralkyl group; m represents an integer from 1 to 3; and n represents an integer from 1 to 4. The content of light absorbing agent in said composition is in the range of from 0.3% by weight to 5% by weight, based on the total solid content of the composition.

    摘要翻译: 公开了一种正型光致抗蚀剂组合物,其包含碱溶性树脂,具有1,2-萘醌二叠氮基的化合物和至少一种选自由下式[I]和 [II]中,所述光吸收剂的含量相对于组合物的总固体成分为0.1〜10重量%的范围:其中,X表示氢原子 卤素原子,烷基,芳烷基,烷氧基,酰基或芳基; Y表示单键,亚烷基,-O - , - S - , - SO 2 - 或R 2表示氢原子,烷基或芳烷基。 m表示1〜3的整数, n表示1〜4的整数。所述组合物中的光吸收剂含量为组合物总固体成分的0.3〜5重量%。

    Negative type photoresist composition
    6.
    发明授权
    Negative type photoresist composition 失效
    负型光刻胶组合物

    公开(公告)号:US5340697A

    公开(公告)日:1994-08-23

    申请号:US73564

    申请日:1993-06-09

    摘要: A negative type photoresist composition comprising a light-sensitive s-triazine compound represented by formula (I), an acid-crosslinkable material, and an alkali soluble resin: ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, a substituted aryl group, a group represented by formula (II) or (III), or R.sub.1 and R.sub.2 may form a heterocyclic group consisting of non-metal atoms bonded to a nitrogen atom; R.sub.3 and R.sub.4 each represent a hydrogen atom, a halogen atom, an alkyl group, or an alkoxy group; X and Y, which may be the same or different, each represents a chlorine atom or a bromine atom; and m and n each represents 0, 1 or 2; ##STR2## wherein R.sub.5 represents an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group; and R.sub.6 and R.sub.7, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group.

    摘要翻译: 一种负型光致抗蚀剂组合物,其包含由式(I)表示的光敏均三嗪化合物,酸可交联物质和碱溶性树脂:其中R 1和R 2可以相同或不同, 不同的是,各自表示氢原子,烷基,取代的烷基,芳基,取代的芳基,由式(II)或(III)表示的基团,或者R 1和R 2可以形成由 键合到氮原子上的非金属原子; R3和R4各自表示氢原子,卤素原子,烷基或烷氧基; X和Y可以相同或不同,各自表示氯原子或溴原子; m和n各自表示0,1或2; (II)其中R 5表示烷基,取代的烷基,芳基或取代的芳基; R 6和R 7可以相同或不同,表示氢原子,烷基,取代的烷基,芳基或取代的芳基。

    Positive-working photoresist composition
    7.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US4894311A

    公开(公告)日:1990-01-16

    申请号:US113951

    申请日:1987-10-29

    CPC分类号: G03F7/022

    摘要: A positive-working photoresist composition containing an alkali-soluble novolak resin and a photosensitive compound represented by the formula ##STR1## wherein D.sub.1 and D.sub.2, which may be the same or different, each represents a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group; R.sub.1 and R.sub.2, which may be the same or different, each represents an alkoxy group, or an alkyl ester group; and a, b, c, and d each is 0 or an integer from 1 to 5, provided that (a+b).gtoreq.1 and (c+d).gtoreq.1.The photoresist composition is excellent in sensitivity and resolving power and forms a resist pattern having good sectional shape and high heat resistance on, for example, a semiconductor. The photoresist composition is also applicable for forming a resist pattern having a line width of less than 1 .mu.m.

    摘要翻译: 含有碱溶性酚醛清漆树脂和式(I)表示的光敏化合物的正性光致抗蚀剂组合物,其中D1和D2可以相同或不同,表示1,2-萘醌二叠氮基-5 磺酰基或1,2-萘醌二叠氮基-4-磺酰基; R 1和R 2可以相同或不同,各自表示烷氧基或烷基酯基; 并且a,b,c和d各自为0或1至5的整数,条件是(a + b)> / = 1和(c + d)> / = 1。 光致抗蚀剂组合物的灵敏度和分辨能力优异,并且在例如半导体上形成具有良好截面形状和高耐热性的抗蚀剂图案。 光致抗蚀剂组合物也可用于形成线宽小于1μm的抗蚀剂图案。

    Positive-working photoresist composition
    10.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US4871645A

    公开(公告)日:1989-10-03

    申请号:US202780

    申请日:1988-06-06

    CPC分类号: G03F7/022 G03F7/0755

    摘要: A positive-working photoresist composition is disclosed. The composition comprises a light-sensitive compound represented by general formula (A) and an alkali-soluble novolak resin. ##STR1## wherein R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e and R.sub.f, which may be the same or different, each represents H, --X--R.sub.1, ##STR2## provided that among the six substituents represented by R.sub.a to R.sub.f, the number of the substituents representing H is a real number of more than 0 and not more than 3 calculated in terms of average value per molecule of the light-sensitive compound, the number of the substituents representing --X--R.sub.1 is a real number of not less than 0.3 calculated in terms of average value per molecule of the light-sensitive compound, and the number of the substituents representing ##STR3## is a real number of not less than 2.5 caluclated in terms of average value per molecule of the light-sensitive compound; X represents a simple bond, ##STR4## R.sub.1 represents a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group; and R.sub.2 and R.sub.3, which may be the same or different, each represents H or a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group.The positive-working photoresist composition is excellent in resolving power, speed, resist profile and heat resistance and is particularly suitable for forming a pattern of fine structure.

    摘要翻译: 公开了一种正性光致抗蚀剂组合物。 该组合物包含由通式(A)表示的感光性化合物和碱溶性酚醛清漆树脂。 (A)其中Ra,Rb,Rc,Rd,Re和Rf可以相同或不同,各自表示H,-X-R1,,条件是在由Ra至Rf表示的六个取代基中 ,代表H的取代基的数目是以每分子光敏化合物的平均值计算的大于0且不大于3的实数,表示-X-R1的取代基的数目是实数 以每分子感光性化合物的平均值计算不小于0.3,代表的取代基的数目是以每分子光的平均值计算的不少于2.5的实数 敏感化合物; X表示简单的键,R 1表示取代或未取代的脂族基或取代或未取代的芳基; 并且R 2和R 3可以相同或不同,表示H或取代或未取代的脂族基团或取代或未取代的芳族基团。 正性光致抗蚀剂组合物的分辨能力,速度,抗蚀剂轮廓和耐热性优异,特别适合于形成精细结构的图案。