公开(公告)号：US08753717B2

公开(公告)日：2014-06-17

申请号：US13524285

申请日：2012-06-15

申请人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yoshitaka Mori

发明人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yoshitaka Mori

IPC分类号： C23C16/455 ,  C23C16/36

CPC分类号： C23C16/345 ,  C23C16/342 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45578

摘要： A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.

摘要翻译： 一种通过在处理容器中提供含硼气体，氮化气体，硅烷类气体和烃气体来在加工对象的表面上形成包含硼，氮，硅和碳的薄膜的成膜方法， 其中处理目标被容纳以被真空吸取的步骤包括：通过执行交替地和间歇地供给含硼气体和氮化气体一次或多次的循环来形成BN膜的第一工艺; 以及通过进行间歇地供给硅烷系气体，烃气体和氮化气体一次以上的循环来形成SiCN膜的第二工序。 因此，可以形成包括具有低k介电常数的硼，氮，硅和碳的薄膜，改善的耐湿蚀刻电阻和减小的漏电流。

公开(公告)号：US09034718B2

公开(公告)日：2015-05-19

申请号：US13571559

申请日：2012-08-10

申请人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

发明人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L28/91 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10852

摘要： Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.

摘要翻译： 提供能够防止具有柱状并且密集布置的电极的破坏的半导体器件。 具有场效应晶体管和具有柱状电容器的半导体器件，该半导体器件包括：具有柱状并与该场效应晶体管的杂质扩散区电连接的第一电极; 至少在所述第一电极的一侧形成的电介质膜; 形成在电介质膜上的第二电极; 以及在与具有柱状的第一电极的长度方向交叉的方向上延伸的支撑膜，并且通过贯穿第二电极的至少一部分而与第一电极连接的添加硼的氮化硅膜形成。

公开(公告)号：US07964241B2

公开(公告)日：2011-06-21

申请号：US11892948

申请日：2007-08-28

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

公开(公告)号：US20080063791A1

公开(公告)日：2008-03-13

申请号：US11892948

申请日：2007-08-28

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

IPC分类号： C23C16/00

CPC分类号： C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

公开(公告)号：US08034673B2

公开(公告)日：2011-10-11

申请号：US12417939

申请日：2009-06-09

申请人： Kentaro Kadonaga ,  Yamato Tonegawa ,  Pao-Hwa Chou ,  Kazuhide Hasebe ,  Tetsuya Shibata

发明人： Kentaro Kadonaga ,  Yamato Tonegawa ,  Pao-Hwa Chou ,  Kazuhide Hasebe ,  Tetsuya Shibata

IPC分类号： H01L21/00

CPC分类号： H01L21/3185 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/28282 ,  H01L21/31612 ,  H01L29/792

摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.

摘要翻译： 半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜， 金属源气体。 该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。