公开(公告)号：US06892108B2

公开(公告)日：2005-05-10

申请号：US10694594

申请日：2003-10-27

Applicant: Karl Mautz ,  Sebastian Schmidt ,  Thorsten Schedel

Inventor： Karl Mautz ,  Sebastian Schmidt ,  Thorsten Schedel

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/027 ,  H01L21/66 ,  G06F19/00

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G05B19/4188 ,  G05B2219/32053 ,  G05B2219/32055 ,  G05B2219/32056 ,  G05B2219/36377 ,  G05B2219/45232 ,  H01L22/20 ,  Y02P90/10 ,  Y02P90/20 ,  Y02P90/24

Abstract: Processing parameters of at least one plate-shaped object, e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool are adjusted depending on which processing device out of at least one set of processing devices has been used for the semiconductor device in a preceding step. A virtual or physical tag is generated, which connects the semiconductor device identification with the processing device identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-units. The amount of compensation is detected and evaluated by metrology tools, which—depending on the sequence of the metrology step relative to the processing step to be adjusted—either feed-forward or feed-backward their results to the processing tool. The yield of semiconductor device production is advantageously increased.

Abstract translation: 处理至少一个板状物体的参数，例如， 在前面的步骤中，根据至少一组处理装置中的哪一个处理装置已被用于半导体装置的处理装置来调整处理工具中的半导体装置或晶片或平板显示器。 生成虚拟或物理标签，其将半导体器件标识与处理器件标识相连接。 这使得能够补偿单个设备的先前处理中与工具有关的影响。 一个例子是在光刻之前的化学机械抛光，其中对准标记可以在CMP单元之间不同地劣化。 通过计量工具检测和评估补偿量，这取决于相对于要调整的处理步骤的度量步骤的顺序 - 前馈或将其结果反馈到处理工具。 有利地增加半导体器件生产的产量。

公开(公告)号：US06979522B2

公开(公告)日：2005-12-27

申请号：US10635583

申请日：2003-08-06

Applicant: Heiko Hommen ,  Ralf Otto ,  Thorsten Schedel ,  Sebastian Schmidt ,  Thomas Fischer

Inventor： Heiko Hommen ,  Ralf Otto ,  Thorsten Schedel ,  Sebastian Schmidt ,  Thomas Fischer

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/70633 ,  G03F9/7046

Abstract: A batch of semiconductor wafers are exposed after an alignment in a wafer stepper or scanner and each of their alignment parameters are determined. Using, e.g., a linear formula with tool specific coefficients, the overlay accuracy can be calculated from these alignment parameters in advance with a high degree of accuracy as if a measurement with an overlay inspection tool had been performed. The exposure tool-offset can be adjusted on a wafer-to-wafer basis to correct for the derived overlay inaccuracy. Moreover, the alignment parameters for a specific wafer can be used to change the tool-offset for the same wafer prior to exposure. The required inspection tool capacity is advantageously reduced, the wafer rework decreases, and time is saved to perform the exposure step.

Abstract translation: 一批半导体晶片在晶片步进器或扫描仪中对齐后进行曝光，并确定其每个对准参数。 使用例如具有刀具特定系数的线性公式，可以以高精确度的方式从这些对准参数中预先计算覆盖精度，如同已经执行了覆盖检查工具的测量一样。 可以在晶圆到晶圆的基础上调整曝光工具偏移量，以校正衍生的叠加误差。 此外，特定晶片的对准参数可用于在曝光之前改变相同晶片的刀具偏移。 所需的检查工具容量有利地减少，晶片返工减少，并节省时间以执行曝光步骤。

公开(公告)号：US06780552B2

公开(公告)日：2004-08-24

申请号：US10175591

申请日：2002-06-19

Applicant: Thorsten Schedel ,  Jens Zimmermann ,  Sebastian Schmidt

Inventor： Thorsten Schedel ,  Jens Zimmermann ,  Sebastian Schmidt

IPC: G03F900

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  H01L22/20

Abstract: After exposing a semiconductor wafer, quality parameters, for example, the critical dimension, the overlay accuracy, and alignment parameters, etc. are measured in successive inspections and are compared with tolerance range widths that are specified dynamically by calculating the range from measured values of one or more of the other quality parameters. For example, the tolerance range width for the overlay accuracy can be increased for smaller measured critical dimension values of the same structures without affecting the functionality of the integrated circuit. Using a forward mechanism, the tolerance ranges can also be adjusted with the quality parameter measurements from a first layer to the quality parameter tolerance range width of a second layer.

Abstract translation: 在暴露半导体晶片之后，在连续检查中测量质量参数，例如临界尺寸，覆盖精度和对准参数等，并与通过计算从 一个或多个其他质量参数。 例如，对于相同结构的较小测量临界尺寸值，可以增加覆盖精度的公差范围宽度，而不会影响集成电路的功能。 使用向前机构，也可以通过从第一层到第二层的质量参数公差范围宽度的质量参数测量来调整公差范围。

公开(公告)号：US06684124B2

公开(公告)日：2004-01-27

申请号：US10134106

申请日：2002-04-29

Applicant: Thorsten Schedel ,  Karl Schumacher ,  Thomas Fischer ,  Heiko Hommen ,  Ralf Otto ,  Sebastian Schmidt

Inventor： Thorsten Schedel ,  Karl Schumacher ,  Thomas Fischer ,  Heiko Hommen ,  Ralf Otto ,  Sebastian Schmidt

IPC: G06F1900

CPC classification number: G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  H01L22/20

Abstract: While a first leading semiconductor wafer (11) already processed in a process appliance (1) and belonging to a batch is being measured in a microscope measuring instrument (2) in relation to values for the structure parameters 30, a second or further semiconductor wafer (12) belonging to the batch is processed in the process appliance (1). An event signal (100) reports, for example, an inspection carried out successfully of the first wafer, so that the following wafers (12) no longer need to be inspected. Using the measured results, the process parameters (31) of the process appliance (1) are automatically readjusted. Events such as maintenance work or parameter drifts in trend maps etc. are detected in control units (8 or 9) and, via the output of an event signal (102), for example in an event database (40), lead to the event-based selection of structure parameters (30′) to be measured and/or to the initiation of a leading wafer (11). Limiting-value violations (21) of at least one process parameter (31), detected by a control unit (8), are responded to by a warning signal (101) and likewise fed into the event database (40).

Abstract translation: 虽然已经在处理器具（1）中处理并属于批次的第一个领先的半导体晶片（11）在显微镜测量仪器（2）中相对于结构参数30的值被测量，第二或另外的半导体晶片 （12）在处理器具（1）中进行处理。 事件信号（100）报告例如第一晶片成功执行的检查，使得不再需要检查以下晶片（12）。 使用测量结果，自动重新调整过程设备（1）的过程参数（31）。 在控制单元（8或9）中检测诸如维护工作或趋势图中参数漂移的事件，并且例如在事件数据库（40）中，通过事件信号（102）的输出导致事件 对待测量的结构参数（30'）和/或引导晶片（11）的启动进行选择。 由控制单元（8）检测到的至少一个处理参数（31）的限制值违反（21）由警告信号（101）响应，并且同样馈送到事件数据库（40）中。

公开(公告)号：US06908775B2

公开(公告)日：2005-06-21

申请号：US10713690

申请日：2003-11-14

Applicant: Rolf Heine ,  Sebastian Schmidt ,  Thorsten Schedel

Inventor： Rolf Heine ,  Sebastian Schmidt ,  Thorsten Schedel

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/00 ,  H01L21/027 ,  H01L21/66 ,  G01R31/26

CPC classification number: G03F7/70633 ,  G03F9/7046 ,  G03F9/7076 ,  G06T7/0002 ,  G06T7/0004 ,  G06T7/33 ,  G06T2207/30148

Abstract: In an alignment or overlay measurement of patterns on a semiconductor wafer an error that occurs during the measurement in one of a predefined number of alignment structures in an exposure field of a corresponding predefined set of exposure fields can be handled by selecting an alignment structure in a substitute exposure field. The latter exposure field need not be part of the predefined set of exposure fields, that is, an inter-field change may be effected. The number of alignment measurements on a wafer remains constant and the quality is increased. Alternatively, when using another alignment structure in the same exposure field—by effecting an intra-field change—the method becomes particularly advantageous when different minimum structure sizes are considered for the substitute targets. Due to the different selectivity in, say, a previous CMP process, such targets might not erode and do not cause an error in a measurement, thus providing an increased alignment or overlay quality.

Abstract translation: 在半导体晶片上的图案的对准或覆盖测量中，可以通过选择一个对准结构中的一个对准结构来处理在相应的预定曝光区域的曝光区域中的预定数量的对准结构之一中的测量期间发生的误差 替代曝光领域。 后一曝光场不需要是预定义的一组曝光场的一部分，也就是说可以实现场间变化。 晶片上的对准测量数量保持不变，并且质量得到提高。 或者，当在相同的曝光场中使用另一对准结构时，通过进行场内变化，当替代目标考虑不同的最小结构尺寸时，该方法变得特别有利。 由于在先前的CMP过程中具有不同的选择性，所以这样的目标可能不会被侵蚀，并且不会在测量中引起误差，从而提供更高的对准或覆盖质量。

公开(公告)号：US07304716B2

公开(公告)日：2007-12-04

申请号：US11127304

申请日：2005-05-12

Applicant: Thorsten Schedel ,  Sebastian Schmidt ,  Günter Hraschan

Inventor： Thorsten Schedel ,  Sebastian Schmidt ,  Günter Hraschan

IPC: G03B27/52 ,  G03B27/42

CPC classification number: G03F7/70883 ,  G03F7/70925 ,  G03F7/70933

Abstract: By a unit for determining fractions of a substance in a gas or gas mixture, measurements are carried out on the gas or gas mixture for purging a lens in a projection apparatus for projecting patterns onto a substrate. The results of a first measurement on the gas fed to the lens are compared with the results of a measurement of the gas removed from the lens. If, the substance is a contaminating substance that leads to a deposit on the lens under the influence of high-energy radiation from an illumination source, the difference is used to infer photochemical reactions on the surface of the lens that lead disadvantageously to the deposition. A signal is generated as a consequence of the comparison and is used to take preventive measures against a degradation of the lens. Mass spectrometers, electric or optical sensors and other known methods for substance analysis are used as measurement units.

Abstract translation: 通过用于确定气体或气体混合物中物质的分数的单元，在气体或气体混合物上进行测量，以在用于将图案投影到基板上的投影设备中清洗透镜。 将进料到透镜的气体进行第一次测量的结果与从透镜去除的气体的测量结果进行比较。 如果物质是在照射源的高能量辐射的影响下导致在透镜上的沉积物的污染物质，则该差异用于推导出对沉积不利的导致的透镜表面的光化学反应。 作为比较的结果产生信号，并且用于采取防止透镜劣化的预防措施。 质谱仪，电子或光学传感器和其他已知的物质分析方法被用作测量单位。

公开(公告)号：US20050269748A1

公开(公告)日：2005-12-08

申请号：US11127304

申请日：2005-05-12

Applicant: Thorsten Schedel ,  Sebastian Schmidt ,  Gunter Hraschan

Inventor： Thorsten Schedel ,  Sebastian Schmidt ,  Gunter Hraschan

IPC: G03F7/20 ,  B29D11/00 ,  B27N7/00 ,  B29C71/00

CPC classification number: G03F7/70883 ,  G03F7/70925 ,  G03F7/70933

Abstract: By a unit for determining fractions of a substance in a gas or gas mixture, measurements are carried out on the gas or gas mixture for purging a lens in a projection apparatus for projecting patterns onto a substrate. The results of a first measurement on the gas fed to the lens are compared with the results of a measurement of the gas removed from the lens. If, the substance is a contaminating substance that leads to a deposit on the lens under the influence of high-energy radiation from an illumination source, the difference is used to infer photochemical reactions on the surface of the lens that lead disadvantageously to the deposition. A signal is generated as a consequence of the comparison and is used to take preventive measures against a degradation of the lens. Mass spectrometers, electric or optical sensors and other known methods for substance analysis are used as measurement units.

Abstract translation: 通过用于确定气体或气体混合物中物质的分数的单元，在气体或气体混合物上进行测量，以在用于将图案投影到基板上的投影设备中清洗透镜。 将进料到透镜的气体进行第一次测量的结果与从透镜去除的气体的测量结果进行比较。 如果物质是在照射源的高能量辐射的影响下导致在透镜上的沉积物的污染物质，则该差异用于推导出对沉积不利的导致的透镜表面的光化学反应。 作为比较的结果产生信号，并且用于采取防止透镜劣化的预防措施。 质谱仪，电子或光学传感器和其他已知的物质分析方法被用作测量单位。

公开(公告)号：US20170103523A1

公开(公告)日：2017-04-13

申请号：US15285626

申请日：2016-10-05

Applicant: David Grodzki ,  Arne Hengerer ,  Michael Kaus ,  Elena Nioutsikou ,  Sebastian Schmidt

Inventor： David Grodzki ,  Arne Hengerer ,  Michael Kaus ,  Elena Nioutsikou ,  Sebastian Schmidt

IPC: G06T7/00 ,  G06T11/00

CPC classification number: G06T7/0012 ,  G06T11/006 ,  G06T11/008 ,  G06T2207/10081 ,  G06T2207/10088

Abstract: The embodiments relate to a reconstructing an image of an examination object, a medical imaging apparatus, and a computer program product where a first image data record is acquired with a first imaging modality and at least one further image data record of at least one further imaging modality is provided. At least one first image is reconstructed on the basis of the first image data record using the at least one further image data record.

公开(公告)号：US09162253B2

公开(公告)日：2015-10-20

申请号：US13640164

申请日：2011-06-08

Applicant: Thomas Tschurl ,  Dominic Gueldner ,  Sebastian Schmidt

Inventor： Thomas Tschurl ,  Dominic Gueldner ,  Sebastian Schmidt

IPC: B05D3/04 ,  B05D1/30 ,  B05D7/02 ,  B05D7/00

CPC classification number: B05D3/0406 ,  B05D1/30 ,  B05D3/0413 ,  B05D3/042 ,  B05D7/02 ,  B05D7/54

Abstract: Method for flow coating a polymeric material, wherein at least a. one component (1) is inserted at an angle of 25° to 90° relative to the floor (5) into a holder (2), b. the component (1) is coated from an upper edge (1a) with a varnish (3) and the varnish (3) is, in the meantime or thereafter, impinged on within a region of 30% of the surface of the component (1) adjacent the upper edge (1a) by a stream of air (4).

Abstract translation: 流动涂覆聚合物材料的方法，其中至少一种。 一个部件（1）相对于地板（5）以25°至90°的角度插入到支架（2）中，b。 组分（1）由具有清漆（3）的上边缘（1a）涂覆，并且清漆（3）同时或此后撞击在组分（1）的表面的30％的区域内 ）通过空气流（4）邻近上边缘（1a）。

公开(公告)号：US08962089B2

公开(公告)日：2015-02-24

申请号：US13697818

申请日：2011-06-06

Applicant: Sebastian Schmidt ,  Thomas Tschurl ,  Juri Zerr

Inventor： Sebastian Schmidt ,  Thomas Tschurl ,  Juri Zerr

IPC: B05D1/30 ,  B05D3/04 ,  B05D7/00 ,  B05D7/02

CPC classification number: B05D1/30 ,  B05D3/0413 ,  B05D3/042 ,  B05D7/02 ,  B05D7/54

Abstract: Method for flow coating a polymeric material, wherein a. at least one component (1) is inserted at an angle of 25° to 90° relative to the floor (5) into a holder (2), and b. the component (1) is coated from the upper edge (1a) with a varnish (3), containing 10 wt.-% to 30 wt.-% of 4-methyl-2-pentanone and/or derivatives thereof.

Abstract translation: 流动涂覆聚合物材料的方法，其中a。 至少一个部件（1）相对于地板（5）以25°至90°的角度插入到支架（2）中，以及b。 组分（1）由具有10重量％至30重量％的4-甲基-2-戊酮和/或其衍生物的清漆（3）从上边缘（1a）涂覆。