公开(公告)号：US4980536A

公开(公告)日：1990-12-25

申请号：US474561

申请日：1990-01-08

申请人： Karl Asch ,  Joachim Keyser ,  Klaus Meissner ,  Werner Zapka

发明人： Karl Asch ,  Joachim Keyser ,  Klaus Meissner ,  Werner Zapka

IPC分类号： B23K26/00 ,  B08B7/00 ,  G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/268 ,  H01L21/30 ,  H01L21/304

CPC分类号： B08B7/0042 ,  G03F1/82 ,  H01L21/268 ,  G03F1/20

摘要： To remove small particles from surfaces of solid bodies at least one laser pulse of high power density (excimer laser) is directed onto the surface. The method is particularly suited to clean Si-masks used in electron-beam lithographic devices. An arrangement for in-situ-cleaning of masks in accordance to this method is integrated in such an electron-beam lithographic device.

公开(公告)号：US4855197A

公开(公告)日：1989-08-08

申请号：US44929

申请日：1987-05-01

申请人： Werner Zapka ,  Jurgen Kempf ,  Joachim Keyser ,  Karl Asch

发明人： Werner Zapka ,  Jurgen Kempf ,  Joachim Keyser ,  Karl Asch

IPC分类号： G03F1/20 ,  G03F1/22 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F1/20 ,  G03F1/22 ,  G03F7/70875 ,  Y10S430/167

摘要： A mask for radiation beam lithography is formed from a semiconductor wafer by thinning a region into a membrane with a hole pattern defining the pattern of the mask. The membrane is doped with a tensile stress-generating material so that minimum doping exists at the periphery of the membrane with the maximum at its center. The difference in doping between the periphery and the center is chosen so that when the mask is irradiated with a given beam current intensity, the membrane is tension-free. To make a mask in the wafer, a hole pattern is formed by etching holes in the membrane or by depositing a layer on the membrane. The wafer is thinned from the opposite surface until the holes in the hole pattern are throughholes or until the desired thickness is reached. The membrane is doped with tensile-stress-generating material using ion implantation or diffusion proportionally to the temperature distribution existing in the membrane during irradiation with exposure beams.

摘要翻译： 用半导体晶片形成用于辐射束光刻的掩模，通过将区域变薄成具有限定掩模图案的孔图案的膜。 膜被拉伸应力产生材料掺杂，使得最小掺杂存在于膜的周边处，其中心处具有最大值。 选择周边和中心之间的掺杂差异，使得当以给定的束电流强度照射掩模时，膜是无张力的。 为了在晶片中制作掩模，通过蚀刻膜中的孔或通过在膜上沉积一层形成孔图案。 晶片从相对表面变薄，直到孔图案中的孔为通孔，或直到达到所需厚度。 使用离子注入或扩散成膜时，利用曝光光束照射期间膜与存在于膜中的温度分布成比例地掺入拉伸应力产生材料。