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    Film forming apparatus and film forming method
    1.
    发明授权
    Film forming apparatus and film forming method 有权

    公开(公告)号：US10316429B2

    公开(公告)日：2019-06-11

    申请号：US15696784

    申请日：2017-09-06

    申请人： Kabushiki Kaisha Toshiba ,  NuFlare Technology, Inc.

    发明人： Shinya Higashi ,  Kaori Deura ,  Kunihiko Suzuki ,  Masayoshi Yajima

    IPC分类号： C30B25/12 ,  H01L21/67 ,  H01L21/687 ,  C30B25/08 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14

    摘要： According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

    Top plate for semiconductor manufacturaing equipment
    3.
    外观设计
    Top plate for semiconductor manufacturaing equipment 有权

    公开(公告)号：USD1016761S1

    公开(公告)日：2024-03-05

    申请号：US29794124

    申请日：2021-06-10

    申请人： NuFlare Technology, Inc.

    设计人： Takuto Umetsu ,  Masayoshi Yajima ,  Kunihiko Suzuki

    摘要： FIG. 1 is a perspective view of a top plate for semiconductor manufacturaing equipment showing our new design;
    FIG. 2 is a front elevational view thereof, the rear elevational view being a mirror image thereof;
    FIG. 3 is a right-side elevational view thereof, the left-side elevational view being a mirror image thereof;
    FIG. 4 is a top plan view thereof;
    FIG. 5 is a bottom plan view thereof;
    FIG. 6 is another perspective view thereof;
    FIG. 7 is a cross-sectional view taken along a line 7-7 of FIG. 4; and,
    FIG. 8 is an enlarged view of portion 8 enclosed by a dot-dot-dash line in FIG. 6.
    The broken lines shown are included for the purpose of illustrating portions of the design which form no part of the claimed design. The dot-dash lines indicate the boundary between the claimed portion and forms no part of the claimed design.

    Manufacturing method for semiconductor device
    5.
    发明授权
    Manufacturing method for semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US09552983B2

    公开(公告)日：2017-01-24

    申请号：US14698031

    申请日：2015-04-28

    申请人： NuFlare Technology, Inc.

    发明人： Hironobu Hirata ,  Masayoshi Yajima ,  Yoshikazu Moriyama

    IPC分类号： H01L21/02 ,  C23C16/46 ,  H01L21/67 ,  H01L21/677

    CPC分类号： H01L21/02299 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/67109 ,  H01L21/67751

    摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.

    摘要翻译： 一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。