公开(公告)号：US10316429B2

公开(公告)日：2019-06-11

申请号：US15696784

申请日：2017-09-06

申请人： Kabushiki Kaisha Toshiba ,  NuFlare Technology, Inc.

发明人： Shinya Higashi ,  Kaori Deura ,  Kunihiko Suzuki ,  Masayoshi Yajima

IPC分类号： C30B25/12 ,  H01L21/67 ,  H01L21/687 ,  C30B25/08 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14

摘要： According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

公开(公告)号：US20180073163A1

公开(公告)日：2018-03-15

申请号：US15696784

申请日：2017-09-06

申请人： Kabushiki Kaisha Toshiba ,  NuFlare Technology, Inc.

发明人： Shinya HIGASHI ,  Kaori Deura ,  Kunihiko Suzuki ,  Masayoshi Yajima

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/14 ,  C23C16/455

CPC分类号： C30B25/12 ,  C23C16/24 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45589 ,  C23C16/4584 ,  C30B25/14

摘要： According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

公开(公告)号：US10237917B2

公开(公告)日：2019-03-19

申请号：US15064105

申请日：2016-03-08

申请人： NuFlare Technology, Inc.

发明人： Hiroshi Furutani ,  Yuusuke Sato ,  Kunihiko Suzuki

IPC分类号： H05B3/26 ,  H05B1/02 ,  H01L21/67

摘要： A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.

公开(公告)号：US20180374721A1

公开(公告)日：2018-12-27

申请号：US16118734

申请日：2018-08-31

申请人： NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC分类号： H01L21/67 ,  H01L21/205 ,  C23C16/455

摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US10157768B2

公开(公告)日：2018-12-18

申请号：US15714511

申请日：2017-09-25

申请人： NuFlare Technology, Inc.

发明人： Yoshikazu Moriyama ,  Naohisa Ikeya ,  Kunihiko Suzuki

IPC分类号： H01L21/687 ,  C23C16/458 ,  C23C16/44 ,  H01L21/67

摘要： An apparatus of an embodiment includes: a processing-chamber; a susceptor capable of supporting a substrate, the susceptor including a first member having an opening in a central portion, and a second member covering the opening; a support configured to support and rotate the susceptor in the processing-chamber; and a lift disposed in the support, and capable of moving up and down at least one of the first member and the second member, wherein the support is capable of rotating the susceptor to have predefined phases with respect to the lift, and when the lift moves up, the lift is brought into contact with the first member if the susceptor is in a first phase, and the lift is brought into contact with the second member if the susceptor is in a second phase that is different from the first phase.

公开(公告)号：US20160270150A1

公开(公告)日：2016-09-15

申请号：US15064105

申请日：2016-03-08

申请人： NuFlare Technology, Inc.

发明人： Hiroshi FURUTANI ,  Yuusuke Sato ,  Kunihiko Suzuki

IPC分类号： H05B1/02 ,  H05B3/26

CPC分类号： H05B1/0233 ,  H01L21/67103 ,  H05B3/26

摘要： A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.

摘要翻译： 根据本公开的实施例的加热器包括加热器元件，该加热器元件包括平坦发热体，线性开口形成的线性狭缝，一端设置在发热体的外周，另一端布置在 所述发热体的周转部分和开口部分形成为从另一端延伸的翻转部分，所述翻转部分的开口直径大于所述线性狭缝的狭缝宽度，所述加热器元件通过带电产生热量， 以及连接到加热器元件的预定面的一对电极，在加热元件通电期间施加在电极上的电压。

公开(公告)号：USD1016761S1

公开(公告)日：2024-03-05

申请号：US29794124

申请日：2021-06-10

申请人： NuFlare Technology, Inc.

设计人： Takuto Umetsu ,  Masayoshi Yajima ,  Kunihiko Suzuki

摘要： FIG. 1 is a perspective view of a top plate for semiconductor manufacturaing equipment showing our new design;
FIG. 2 is a front elevational view thereof, the rear elevational view being a mirror image thereof;
FIG. 3 is a right-side elevational view thereof, the left-side elevational view being a mirror image thereof;
FIG. 4 is a top plan view thereof;
FIG. 5 is a bottom plan view thereof;
FIG. 6 is another perspective view thereof;
FIG. 7 is a cross-sectional view taken along a line 7-7 of FIG. 4; and,
FIG. 8 is an enlarged view of portion 8 enclosed by a dot-dot-dash line in FIG. 6.
The broken lines shown are included for the purpose of illustrating portions of the design which form no part of the claimed design. The dot-dash lines indicate the boundary between the claimed portion and forms no part of the claimed design.

公开(公告)号：US10896831B2

公开(公告)日：2021-01-19

申请号：US16118734

申请日：2018-08-31

申请人： NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC分类号： C23C16/40 ,  H01L21/67 ,  H01L21/205 ,  C23C16/455 ,  B01F3/02 ,  H01L21/02

摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US10745824B2

公开(公告)日：2020-08-18

申请号：US15813709

申请日：2017-11-15

申请人： NUFLARE TECHNOLOGY, INC.

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Masayoshi Yajima ,  Kazukuni Hara ,  Hiroaki Fujibayashi ,  Hideki Matsuura ,  Katsumi Suzuki

IPC分类号： C23C16/40 ,  C30B25/10 ,  C23C16/46 ,  C30B25/14 ,  C23C16/52 ,  C23C16/455 ,  C30B25/16 ,  C30B29/36 ,  C23C16/44

摘要： A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

公开(公告)号：US09873941B2

公开(公告)日：2018-01-23

申请号：US14812130

申请日：2015-07-29

申请人： NuFlare Technology, Inc. ,  Toyota Jidosha Kabushiki Kaisha

发明人： Hideki Ito ,  Toshiro Tsumori ,  Kunihiko Suzuki ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito ,  Masami Naito ,  Hiroaki Fujibayashi ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： C23C16/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10

CPC分类号： C23C16/325 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45557 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10

摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.