公开(公告)号：US10745824B2

公开(公告)日：2020-08-18

申请号：US15813709

申请日：2017-11-15

申请人： NUFLARE TECHNOLOGY, INC.

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Masayoshi Yajima ,  Kazukuni Hara ,  Hiroaki Fujibayashi ,  Hideki Matsuura ,  Katsumi Suzuki

IPC分类号： C23C16/40 ,  C30B25/10 ,  C23C16/46 ,  C30B25/14 ,  C23C16/52 ,  C23C16/455 ,  C30B25/16 ,  C30B29/36 ,  C23C16/44

摘要： A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.