公开(公告)号：US11283243B2

公开(公告)日：2022-03-22

申请号：US16488595

申请日：2018-02-27

Applicant: KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

Inventor： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa ,  Junichi Sonoda ,  Tomoaki Koizumi ,  Kei Emoto

IPC: H01S5/02216 ,  H01S5/22 ,  H01S5/18 ,  H01S5/32 ,  H01L21/02 ,  H01S5/11 ,  H01S5/12 ,  H01S5/20

Abstract: A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.

公开(公告)号：US12113333B2

公开(公告)日：2024-10-08

申请号：US17272385

申请日：2019-08-29

Applicant: KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

Inventor： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa ,  Kenji Ishizaki ,  Tomoaki Koizumi ,  Kei Emoto

IPC: H01S5/00 ,  H01S5/11 ,  H01S5/183 ,  H01S5/185 ,  H01S5/343 ,  C30B25/18 ,  C30B29/40 ,  H01S5/042 ,  H01S5/20

CPC classification number: H01S5/11 ,  H01S5/183 ,  H01S5/185 ,  H01S5/34333 ,  C30B25/18 ,  C30B29/403 ,  H01S5/04254 ,  H01S5/2009 ,  H01S2304/04

Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.

公开(公告)号：US11539187B2

公开(公告)日：2022-12-27

申请号：US16956512

申请日：2018-12-17

Applicant: KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

Inventor： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa ,  Tomoaki Koizumi ,  Kei Emoto

IPC: H01S5/11 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S5/185

Abstract: A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

公开(公告)号：US12184036B2

公开(公告)日：2024-12-31

申请号：US17632896

申请日：2020-08-04

Applicant: KYOTO UNIVERSITY

Inventor： Susumu Noda ,  Takuya Inoue ,  Masahiro Yoshida ,  Menaka De Zoysa

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/18

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes an active layer, a two-dimensional photonic crystal, and electrodes. The two-dimensional photonic crystal contains a plate-shaped base material arranged on one side of the active layer and different refractive index portions arranged at lattice points of a predetermined lattice in the base material and having a refractive index different from that of the base material, a band edge frequency for each position in an electric current supply region, which is at least a part of the two-dimensional photonic crystal, is monotonically increased in one direction parallel to the base material. Such a two-dimensional photonic crystal occurs when the different refractive index portion has a refractive index smaller than that of the base material, a filling factor, which is a ratio of a volume occupied by the different refractive index portion in a unit lattice constituting the lattice, is monotonically increased in the one direction.

公开(公告)号：US10461502B2

公开(公告)日：2019-10-29

申请号：US16080480

申请日：2017-02-24

Applicant: KYOTO UNIVERSITY ,  ROHM CO., LTD. ,  HAMAMATSU PHOTONICS K.K. ,  MITSUBISHI ELECTRIC CORPORATION

Inventor： Susumu Noda ,  Yoshinori Tanaka ,  Menaka De Zoysa

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/18 ,  H01S5/20 ,  H01S5/183 ,  H01S5/042 ,  H01S5/343 ,  H01S5/323

Abstract: A two-dimensional photonic crystal surface emitting laser has, in a plate-shaped base body, a two-dimensional photonic crystal layer in which modified refractive index region pairs are periodically arranged and an active layer provided on one side of the base body, each of the modified refractive index region pairs including a first modified refractive index region and a second modified refractive index region having refractive indexes different from a refractive index of the base body, wherein an area of a planar shape of the first modified refractive index region is larger than or equal to an area of a planar shape of the second modified refractive index region, and a thickness of the first modified refractive index region is smaller than a thickness of the second modified refractive index region.

公开(公告)号：US12155176B2

公开(公告)日：2024-11-26

申请号：US17430852

申请日：2020-02-04

Applicant: KYOTO UNIVERSITY

Inventor： Susumu Noda ,  Takuya Inoue ,  Masahiro Yoshida ,  Menaka De Zoysa

IPC: H01S5/11

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes an active layer; and a photonic-crystal layer including a two-dimensional photonic-crystal light-amplification portion that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body disposed on one side of the active layer, and includes an amplification-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion, and includes a reflection-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap and the reflection-portion photonic band gap partially overlap and are different.

公开(公告)号：US20190064393A1

公开(公告)日：2019-02-28

申请号：US16080789

申请日：2017-02-28

Applicant: Osaka Gas Co., Ltd. ,  Kyoto University

Inventor： Masahiro Suemitsu ,  Tadashi Saito ,  Susumu Noda ,  Takashi Asano ,  Menaka De Zoysa

IPC: G02B1/00 ,  F28F13/18

Abstract: A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.

公开(公告)号：US11112536B2

公开(公告)日：2021-09-07

申请号：US16080789

申请日：2017-02-28

Applicant: Osaka Gas Co., Ltd. ,  Kyoto University

Inventor： Masahiro Suemitsu ,  Tadashi Saito ,  Susumu Noda ,  Takashi Asano ,  Menaka De Zoysa

IPC: G02B1/00 ,  H01K11/00 ,  H01K1/14 ,  F28F13/18 ,  F28D21/00

Abstract: A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.