公开(公告)号：US12237153B2

公开(公告)日：2025-02-25

申请号：US17978778

申请日：2022-11-01

Applicant: KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY

Inventor： Sung min Lee ,  Yoon Suk Oh

IPC: H01J37/32 ,  C23C14/06 ,  C23C14/08 ,  C23C14/24 ,  C23C14/26 ,  C23C14/30 ,  C23C14/50 ,  H01J37/147 ,  H01J37/06

Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.